SCI Journal Papers

2020


464. Selective Coating of White Silicone to Improve the Optical and Thermal Characteristics of White LED Packages, Ho-Young Kim, Hyoung-Jin Kim, Jong-Woo Lee, Kyoung-Mo Kang, Jeong-Tak Oh, Hwan-Hee Jeong and Tae-Yeon Seong, ECS Journal of Solid State Science and Technology, 9, 065008 (2020)


463. Optimization of InGaN-based LED Package Structure for Automotive Adaptive Driving Beam Headlamp, Ho-Young Kim, Min-Su Kim, Kwang-Hee Lee, Kyoung-Mo Kang, Jeong-Tak Oh, Hwan-Hee Jeong and Tae-Yeon Seong, ECS Journal of Solid State Science and Technology, 9, 055017 (2020)


462. All‐Solution Processed Multicolor Patterning Technique of Perovskite Nanocrystal for Color Pixel Array and Flexible Optoelectronic Devices, Sang-Hyun Jeon, Sang-Yeop Lee, Su-Kyung Kim, Woo-Sik Kim, Tae-Sung park, Jun-Sung Bang, Jun-Hyuk Ahn, Ho-Kun Woo, Ji-Yeon Chae, Tae-Jong Paik, Tae-Yeon Seong and Soong-Ju Oh, ADVANCED OPTICAL MATERIALS, 2020, 2000501 (2020)


461. Performance comparison of InGaN-based phosphor converted and AlGaInP-based red light-emitting diode packages for vehicle rear fog lamps, Ho-Young Kim, Kyoung-Mo Kang, Jae-Moon Lee, Kwang-Ki Choi, Jeong-Tak Oh, Hwan-Hee Jeong and Tae-Yeon Seong, ECS Journal of Solid State Science and Technology, xx, xxxx (2020)


460. Improving the Leakage Characteristics and Efficiency of GaN-based Micro-Light-Emitting Diode with Optimized Passivation, Da-Hoon Lee, Jung-Hoon Lee, Jin-Seong Park, Tae-Yeon Seong and Hiroshi Amano, ECS Journal of Solid State Science and Technology, 9, 055001 (2020)


459. Formation of high ultraviolet transparent SrVOx/Ag-based conducting electrode, Su-Kyung Kim, Jin-Woo Cho, Hyeong-Seop Im, Weon-Cheol Lim, Sun-Kyung Kim and Tae-Yeon Seong, Ceramics International, xx, xxxx (2020)


458. Improved Leakage and Output Characteristics of Pixelated LED Array for Headlight application, Sang-Youl Lee, Ki-man Kang, Eun-duk Lee, Yoo-min Jo, Do-yub Kim, Jeong-Tak Oh, Hwan-Hee Jeong, Tae-Yeon Seong and Hiroshi Amano, ECS Journal of Solid State Science and Technology, 9, 045011 (2020)


457. Sputtering-deposited amorphous SrVOx-based memristor for use in neuromorphic computing, Tae-Ju Lee, Su-Kyung Kim and Tae-Yeon Seong, SCIENTIFIC REPORTS, 10, 5761 (2020)


456. Effects of Ultraviolet Wavelength and Ambient Temperature on Reliability of Silicones in InAlGaN-Based Light-Emitting-Diode Package, Ho-Young Kim, Jong-Woo Lee, Duk-Jin Jun, Sung-Joo Song, Jeong-Tak Oh, Hwan-Hee Jeong, Tae-Yeon Seong and Hiroshi Amano, ECS Journal of Solid State Science and Technology, 9, 035005 (2020)


455. Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector, Sang-Yeol Lee, Ji-Hyung Moon, Yong-Tae Moon, Chung-Song Kim, Sun-Woo Park, Jeong-Tak Oh, Hwan-Hee Jeong, Tae-Yeon Seong and Hiroshi Amano, IEEE Photonics Technology Letters, 32, 7 (2020)


454. Using SiO2-Based Distributed Bragg Reflector to Improve the Performance of AlGaInP-Based Red Micro-Light Emitting Diode, Sang-Yeol Lee, Ji-Hyung Moon, Yong-Tae Moon, Byoung-Jun Choi, Jeong-Tak Oh, Hwan-Hee Jeong, Tae-Yeon Seong and Hiroshi Amano, ECS Journal of Solid State Science and Technology, 9, 036002 (2020)


453. Oblique-Angle Deposited SiO2/Al Omnidirectional Reflector for Enhancing the Performance of AlGaN-Based Ultraviolet Light-Emitting Diode, Jeong-Won Lee, Tae-Yeon Seong and Hiroshi Amano, ECS Journal of Solid State Science and Technology, 9, 026005 (2020)


452. Preface—JSS Focus Issue on Recent Advances in Wide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki, Fan Ren, Kailash C. Mishra, Hiroshi Amano, John Collins, Jung Han, Won Bin Im, Michael Kneissl, Tae-Yeon Seong, Anant Setlur, Tadek Suski and Eugeniusz Zych, ECS Journal of Solid State Science and Technology, 9, 010001 (2020)


451. Self-catalytic-grown SnOx nanocones for light outcoupling enhancement in organic light-emitting diodes, Jun-Hee Choi, Hyeong-Seop Im, Jin-Ho Kwack, Ha Hwang, Young-Wook Park, Tae-Yeon Seong and Byeong-Kwon Ju, Nanotechnology, 31, 135204 (2020)


450. Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode, Da-Hoon Lee, Dae-Sung Kang, Tae-Yeon Seong, Michael Kneissl and Hiroshi Amano, Journal of Physics D: Applied Physics, 53, 045106 (2020)


2019


449. Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer, Wen-Cheng Ke, Solomun Teklahymanot Tesfay, Tae-Yeon Seong, Zhong-Yi Liang, Chih-Yung Chiang, Chieh-Yi Chen, Widi Son, Kuo-Jen Chang and Jia-Ching Lin, ACS APPLIED MATERIALS & INTERFACES, 11, 48086 (2019)


448. Improvement of The Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe-Type n-Contact and Reflective Bonding Pad, Jong-Ho Kim, Yong-Won Lee, Hyeong-Seop Im, Chan-Hyung Oh, Jong-In Shim, Dae-Sung Kang, Tae-Yeon Seong and Hiroshi Amano, ECS Journal of Solid State Science and Technology, 9, 015021 (2019)


447. Improvement in the Reliability of AlGaInP-Based Light-Emitting Diode Package Using Optimal Silicone and Leadframe Structure, Ho-Young Kim, Jong-Woo Lee, Young-Min Moon, Jeong-Tak Oh, Hwan-Hee Jeong, June-O Song, Tae-Yeon Seong, Michael Kneissl and Hiroshi Amano, ECS Journal of Solid State Science and Technology, 9, 015014 (2019)


446. Plasma and Annealing Treatments to Form Height-Barrier Ni-Based Schottky Contact to n-GaN, Tae-Ju Lee, Hyeong-Seop Im and Tae-Yeon Seong, ECS Journal of Solid State Science and Technology, 8, Q194-Q199 (2019)


445. Forming ITO/Ag Hole-Array/ITO Multilayers for Near Infrared Transparent Conducting Electrodes and Filters, Hyeong-Seop Im, Daihong Huh, Heon Lee, Su-Kyung Kim and Tae-Yeon Seong, ECS Journal of Solid State Science and Technology, 8, Q189-Q193 (2019)


444. Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application, Dae-Sung Kang, Jeong-Tak Oh, June-O Song, Tae-Yeon Seong, Michael Kneissl and Hiroshi Amano, Applied Physics Express, 12, 102016 (2019)


443. Combined effects of oxygen pressures and RF powers on the electrical characteristics of ITO-based multilayer transparent electrodes, Hyeong-Seop Im, Su-Kyung Kim, Tae-Ju Lee and Tae-Yeon Seong, Vacuum, 169, 108871 (2019)


442. Via-Hole-Type Flip-Chip Packaging to Improve the Thermal Characteristics and Reliability of Blue Light Emitting Diodes, Ho-Young Kim, Chang-Man Lim, Ki-Seok Kim, Jeong-Tak Oh, Hwan-Hee Jeong, June-O Song, Tae-Yeon Seong and Hiroshi Amano, ECS Journal of Solid State Science and Technology, 8, Q165-Q170 (2019)


441. Transparent Sn-doped In2O3 electrodes with a nanoporous surface for enhancing the performance of perovskite solar cells, Jae-Ho Kim, Tae-Yeon Seong, Kwun-Bum Chung, Chan-Su Moon, Jun-Hong Noh, Hae-Jun Seok and Han-Ki Kim, Journal of Power Sources, 418, 152-161 (2019)


440. Ag-Pd-Cu alloy reflector to improve the opto-electronic performance and electromigration resistance of near ultraviolet GaN-based light-emitting diode, Kee-Baek Sim, Su-Jung Yoon, Hyeong-Seop Im and Tae-Yeon Seong, Journal of Alloys and Compounds, 800, 512-517 (2019)


439. Combined effects of V pits and chip size on the electrical and optical properties of green InGaN-based light-emitting diodes, Dae-Hyun Kim, Young-Soo Park, Dae-Sung Kang, Kyoung-Kook Kim, Tae-Yeon Seong and Hiroshi Amano, Journal of Alloys and Compounds, 796, 146-152 (2019)


438. The emergence and prospects of deep-ultraviolet light-emitting diode technologies, Michael Kneissel, Tae-Yeon Seong, Jung Han and Hiroshi Amano, Nature Photonics, 13, 233-244 (2019)


437. Using Ag disc array to tune infrared transmittance of ITO-based multilayer films, Hyeong-Seop Im, JunHo Kim, Sei Young Lee and Tae-Yeon Seong, Journal of Alloys and Compounds, 785, 742-746 (2019)


436. Optimized ITO/Ag/ITO multilayers as a current spreading layer to enhance the light output of ultraviolet light-emitting diodes, Sei Young Lee, Young Soo Park and Tae-Yeon Seong, Journal of Alloys and Compounds, 776, 960-964 (2019)


2018


435. Flexible ITO films with atomically flat surfaces for high performance flexible perovskite solar cells, Jae-Ho Kim, Hae-Jun Seok, Hyeong-Jin Seo, Tae-Yeon Seong, Jin Hyuck Heo, Sang-Hyuk Lim, Kyung-Jun Ahnd and Han-Ki Kim, Nanoscale, issue 44, (2018)


434. Enhanced resolution of surface plasmon resonance sensor on the detection of C-reactive protein via the bimetallic waveguide-coupled mode approach, Hwa Seub Lee, Tae Yeon Seong, Won Mok Kim, Inho Kim, Gyu Weon Hwang, Wook Seong Lee, Kyeong Seok Lee, Sensors and Actuators, B: Chemical, 266, 311-317 (2018)


433. Improved angular color uniformity and hydrothermal reliability of phosphor-converted white light-emitting diodes by using phosphor sedimentation, Won Jung Kim, Taek Kyun Kim, Sung Ho Kim, Suk Bum Yoon, Hwan-Hee Jeong, June-O Song, and Tae-Yeon Seong, Optics Express, 26, 28634-28640 (2018)


432. An Optically Flat Conductive Outcoupler Using Core/Shell Ag/ZnO Nanochurros,Young Zo Yoo Jin‐Young Na Yoon Soo Choi Yeong Jin Lim Ji‐Hyun Kim Young‐Bin Kim Jae‐Ho Kim Sun‐Kyung Kim Tae‐Yeon Seong, Small, 14, issue 20 (2018)


431. The effects of film thickness on the electrical, optical, and structural properties of cylindrical, rotating, magnetron-sputtered ITO films, Jae-Ho Kim, Tae-Yeon Seong, Kyung-Jun Ahn, Kwun-Bum Chung, Hae-Jun Seok, Hyeong-Jin Seo, Han-Ki Kim, Applied Surface Science, 440, 1211-1218 (2018)


430. Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures, Jeong-Tak Oh, Sang-Youl Lee, Yong-Tae Moon, Ji Hyung Moon, Sunwoo Park, Ki Yong Hong, Ki Young Song, Chanhyoung Oh, Jong-In Shim, Hwan-Hee Jeong, June-O Song, Hiroshi Amano, and Tae-Yeon Seong, Optics Express, 26, 11194-11200 (2018)


429. Inhomogeneity of barrier heights of transparent Ag/ITO Schottky contacts on n-type GaN annealed at different temperatures, Su-Jung Yoon, Jeeyun Lee, Tae-Yeon Seong, Journal of Alloys and Compounds, 742, 66-71 (2018)


428. High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer, Jeong-Tak Oh, Yong-Tae Moon, Dae-Sung Kang, Chan-Keun Park, Jae-Woong Han, Myung-Hoon Jung, Youn-Joon Sung, Hwan-Hee Jeong, June-O Song, Tae-Yeon Seong, Optical Express, 26, 5111-5117 (2018)


427. Interfacial reactions to form high-barrier-height ITO-based Schottky contacts on p-type GaN using a Ti interlayer, Su-Jung Yoon, Tae-Yeon Seong, Journal of Alloys and Compounds, 741, 999-1005 (2018)


426. High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer, Jeong-Tak Oh, Yong-Tae Moon, Jung-Hun Jang, Jung-Hyun Eum, Youn-Joon Sung, Sang Youl Lee, Jun-O Song, Tae-Yeon Seong, Journal of Alloys and Compounds, 732, 630-636 (2018)


425. Characteristics of gradient-interface-structured ZnCdSSe quantum dots with modified interface and its application to quantum-dot-sensitized solar cells, Da-Woon Jeong, Jae-Yup Kim, Han Wook Seo, Kyoung-Mook Lim, Min Jae Ko, Tae-Yeon Seong, Bum Sung Kim, Applied Surface Science, 429, 16-22 (2018)


2017


424. Cr/ITO semi-transparent n-type electrode for high-efficiency AlGaN/InGaN-based near ultraviolet light-emitting diodes, Hwankyo Kim, Dae-Hyun Kim, Tae-Yeon Seong, Superlattices and Microstructures, 111, 872-877 (2017)


423. Inverted Organic Solar Cells Fabricated with Room‐Temperature‐deposited Transparent Multilayer Electrodes, Jun Ho Kim, Sung-Nam Kwon, Seok-In Na, Young-Zo Yoo, Tae-Yeon Seong, Bulletin of the Korean Chemical Society, 38, 856 (2017)


422. Use of a patterned current blocking layer to enhance the light output power of InGaN-based light-emitting diodes, Jae-Seong Park, Young Hoon Sung, Jin-Young Na, Daesung Kang, Sun-Kyung Kim, Heon Lee, Tae-Yeon Seong, Optics Express, 25, 17556 (2017)


421. Improved light output power of GaN‐based ultraviolet light‐emitting diode using a mesh‐type GaN/SiO2/Al omnidirectional reflector, Jun-Youn Won, Dae-Hyun Kim, Daesung Kang, Jun-Suk Sung, Da-Som Kim, Sun-Kyung Kim, Tae-Yeon Seong, Physica Status Solidi A-Applications and Materials Science, 214, 1600789 (2017)


420. Reducing forward voltage and enhancing output performance of InGaN‐based blue light‐emitting diodes using metal dot‐embedded transparent p‐type finger, Jeeyun Lee, Dae-Hyun Kim, Ki-Seok Kim, Tae-Yeon Seong, Physica Status Solidi A-Applications and Materials Science, 214, 1600792 (2017)


419. A Thermally Stable NiZn/Ta/Ni Scheme to Replace AuBe/Au Contacts in High-Efficiency AlGaInP-Based Light-Emitting Diodes, Dae-Hyun Kim, Jae-Seong Park, Daesung Kang, Tae-Yeon Seong, Journal of Electronic Materials, 26, 4750-4754 (2017)


418. Ag nanowire-based electrodes for improving the output power of ultraviolet AlGaN-based light-emitting diodes, Jae-Seong Park, Jae-Ho Kim, Jin-Young Na, Dae-Hyun Kim, Daesung Kang, Sun-Kyung Kim, Tae-Yeon Seong, Journal of Alloys and Compounds, 703, 198-203 (2017)


417. Review-Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency, Jae-Seong Park, Jong Kyu Kim, Jaehee Cho, Tae-Yeon Seong, ECS Journal of Solid State Science and Technology, 6, Q42-Q52 (2017)


416. One-pot synthesis of gradient interface quaternary ZnCdSSe quantum dots, Da-Woon Jeong, Ji Young Park, Han Wook Seo, Nosang Vincent Myung, Tae-Yeon Seong, Bum Sung Kim, Applied Surface Science, 415, 19-23 (2017)


415. Improvement of the light output of AlGaInP-based light-emitting diode by employing highly transparent Au/ITO p-type electrode, Byoungjun Choi, Dae-Hyun Kim, Daesung Kang, Tae-Yeon Seong, Journal of Alloys and Compounds, 699, 1180-1185 (2017)


414. Electron transport layer-free inverted organic solar cells fabricated with highly transparent low-resistance indium gallium zinc oxide/ag/indium gallium zinc oxide multilayer electrode, Jun Ho Kim, Sung-Nam Kwon, Seok-In Na, Sun-Kyung Kim, Young-Zo Yoo, Hyeong-Seop Im, Tae-Yeon Seong, Journal of Electronic Materials, 46, 2140-2146 (2017)


413. Electrical and optical characteristics of transparent conducting Si-doped ZnO/hole-patterned Ag/Si-doped ZnO multilayer films, Jun Ho Kim, Hyeong-Seop Im, Dae-Woong Hwang, Sun-Kyung Kim, Dukkyu Bae, Young-Zo Yoo, Kyeong-Seok Lee, Tae-Yeon Seong, Ceramics International, 43, 4, 3693-3697 (2017)


412. Transparent conductive ITO/Ag/ITO electrode deposited at room temperature for organic solar cells, Jun Ho Kim, Tae-Woon Kang, Sung-Nam Kwon, Seok-In Na, Young-Zo Yoo, Hyeong-Seop Im, Tae-Yeon Seong, Journal of Electronic Materials, 46, 1, 306-311 (2017)


411. Using agglomerated Ag grid to improve the light output of near ultraviolet AlGaN-based light-emitting diode, Jun-Yong Kim, Jae-Seong Park, Jin-Young Na, Sun-Kyung Kim, Daesung Kang, Tae-Yeon Seong, Microelectronic Engineering, 169, 29-33 (2017)


410. Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes, Jae-Seong Park, Jae-Ho Kim, Jun-Yong Kim, Dae-Hyun Kim, Jin-Young Na, Sun-Kyung Kim, Daesung Kang, Tae-Yeon Seong, Nanotechnology, 28, 4 (2017)


2016


409. Fine tuning of colloidal cdse quantum dot photovoltaic properties by microfluidic reactors, Da-Woon Jeong, Ji Young Park, Taek-Soo Kim, Tae-Yeon Seong, Jae-Yup Kim, Min Jae Ko, Bum Sung Kim, Electrochimica Acta, 222, 1668-1676 (2016)


408. InGaN-based light-emitting diodes grown on a micro/nanoscale hybrid patterned sapphire substrate, Wen-Cheng Ke, Fang-Wei Lee, Chih-Yung Chiang, Zhong-Yi Liang, Wei-Kuo Chen, Tae-Yeon Seong, ACS Applied Materials & Interfaces, 8, 50, 34520-34529 (2016)


407. Controlling the defect density to improve the output power of InGaN/GaN-based vertical light-emitting diodes by using substrates patterned with SiO2 lenses, Daesung Kang, Da-Som Kim, Sun-Kyung Kim, Kiyoung Song, Myunghoon Jung, Hwanhee Jeong, June-O Song, Tae-Yeon Seong, Philosophical Magazine, 96, 27, Part A (2016)


406. Electrical Characteristics of Schottky Contacts to p-Type (001) GaP: Understanding of Carrier Transport Mechanism, Sungjoo Song, Dae-Hyun Kim, Daesung Kang, Tae-Yeon Seong, Journal of Electronic Materials, 45, 10, 5297-5301 (2016)


405. Control of refractive index by annealing to achieve high figure of merit for TiO2/Ag/TiO2 multilayer films, Jae-Ho Kim, Dae-Hyun Kim, Sun-Kyung Kim, Dukkyu Bae, Young-Zo Yoo, Tae-Yeon Seong, Ceramics International, 42, 12, 14071-14076 (2016)


404. Formation of flexible and transparent indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer film, Jun Ho Kim, Da-Som Kim, Sun-Kyung Kim, Young-Zo Yoo, Jeong Hwan Lee, Sang-Woo Kim, Tae-Yeon Seong, Journal of Electronic Materials, 45, 8, 4265-4269 (2016)


403. Investigating the origin of efficiency droop by profiling the voltage across the multi-quantum well of an operating light-emitting diode, Taewoong Kim, Tae-Yeon Seong, Ohmyoung Kwon, Applied Physics Letters, 108, 23 (2016)


402. Highly flexible Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited on PET substrates at room temperature, Jun Ho Kim, Da-Som Kim, Sun-Kyung Kim, Young-Zo Yoo, Jeong Hwan Lee, Sang-Woo Kim, Tae-Yeon Seong, Ceramics International, 42, 2, Part B, 3473-3478 (2016)


401. A tantalum diffusion barrier layer for improving the output performance of AlGaInP-based light-emitting diodes, Dae-Hyun Kim, Jae-Seong Park, Daesung Kang, Tae-Yeon Seong, Japanese Journal of Applied Physics, 55, 3, 032102 (2016)


400. Comparison of the Performance of Lateral and Vertical InGaN/GaN-Based Light-Emitting Diodes with GaN and AlN Nucleation Layers, Daesung Kang, Myunghoon Jung, Eunsil Choi, Kiyoung Song, Hwanhee Jeong, June-O Song, Da-Som Kim, Sun-Kyung Kim, Tae-Yeon Seong, ECS Journal of Solid State Science and Technology, 5, 2, Q1-Q6 (2016)


399. Effect of Amine Additive for the Synthesis of Cadmium Selenide Quantum Dots in a Microreactor, Da-Woon Jeong, Basudev Swain, Tae-Yeon Seong, Kyoung-Tae Park, Chan Gi Lee, Bum Sung Kim, International Journal of Applied Ceramic Technology, 13, 2, 223-227 (2016)


398. Hybrid indium tin oxide/Ag nanowire electrodes for improving the light output power of near ultraviolet AlGaN-based light-emitting diode, Jae-Seong Park, Jae-Ho Kim, Jun-Yong Kim, Dae-Hyun Kim, Daesung Kang, Jun-Suk Sung, Tae-Yeon Seong, Current Applied Physics, 16, 5, 545-548 (2016)


397. Thermally stable AuBe-based ohmic contacts to p-type GaP for AlGaInP-based light-emitting diode by using a tungsten barrier layer, Dae-Hyun Kim, Daesung Kang, Jae-Seong Park, Tae-Yeon Seong, Journal of the Korean Physical Society, 68, 2, 306-310 (2016)


396. Thermally stable Ti/Al-based ohmic contacts to N-polar n-GaN by using an indium interlayer, Sung Ki Kim, Jae Chun Han, Tae-Yeon Seong, Japanese Journal of Applied Physics, 55, 3, 031001 (2016)


2015


395. Formation of low resistance Ti/Al-based ohmic contacts on (11–22) semipolar n-type GaN, Jae-Seong Park, Jaecheon Han, Tae-Yeon Seong, Journal of Alloys and Compounds, 652, 167-171 (2015)


394. Al-doped ZnO/Ag/Al-doped ZnO multilayer films with a high figure of merit, Jun Ho Kim, Yoon-Jong Moon, Sun-Kyung Kim, Young-Zo Yoo, Tae-Yeon Seong, Ceramics International, 41, 10, Part B, 14805-14810 (2015)


393. ITO-free inverted organic solar cells fabricated with transparent and low resistance Zno/Ag/Zno multilayer electrode, Jun Ho Kim, Tae-Woon Kang, Seok-In Na, Young-Zo Yoo, Tae-Yeon Seong, Current Applied Physics, 15, 7, 829-832 (2015)


392. Highly transparent and low-resistance indium-free ZnO/Ag/ZnO multilayer electrodes for organic photovoltaic devices, Jun Ho Kim, Jin-Young Na, Sun-Kyung Kim, Young-Zo Yoo, Tae-Yeon Seong, Journal of Electronic Materials, 44, 10, 3967-3972 (2015)


391. Improving the output power of GaN-based light-emitting diode using Ag particles embedded within a SiO2 current blocking layer, Jae-Seong Park, Jaecheon Han, Tae-Yeon Seong, Superlattices and Microstructures, 83, 361-366 (2015)


390. Design of near-unity Transmittance Dielectric/Ag/ITO Electrodes for GaN-based LEDs, Han-Kyeol Lee, Jin-Young Na, Yoon-Jong Moon, Tae-Yeon Seong, Sun-Kyung Kim, Current Applied Physics, 15, 7, 833-838 (2015)


389. Reducing forward bias voltage of InGaN/GaN-based LEDs by using GaN and (In)GaN contact layers, Daesung Kang, Younghun Han, Donghun Kang, Hyunai Kyoung, Hwanhee Jeong, June-O Song, Dae-Hyun Kim, Tae-Yeon Seong, Japanese Journal of Applied Physics, 54, 6, 062102 (2015)


388. Flexible and transparent TiO2/Ag/ITO multilayer electrodes on PET substrates for organic photonic devices, Dae-Hyun Kim, Jun Ho Kim, Han-Kyeol Lee, Jin-Young Na, Sun-Kyung Kim, Jeong Hwan Lee, Sang-Woo Kim, Young-Zo Yoo and Tae-Yeon Seong, Journal of Meterials Research, 30, 10, 1593-1598 (2015)


387. ZnSnO/Ag/ITO multilayer films as a flexible and transparent electrode for organic photonic devices, Dae-Hyun Kim, Han-Kyeol Lee, Jin-Young Na, Sun-Kyung Kim, Young-Zo Yoo, Tae-Yeon Seong, Superlattices and Microstructures, 83, 635-641 (2015)


386. Improving output power performance of InGaN-based LEDs by employing step-down indium contents, Daesung Kang, Taejoon Kim, Kiyoung Song, Jihyun Back, Hwanhee Jeong, June-O Song, Tae-Yeon. Seong, Japanese Journal of Applied Physics, 54, 4, 042102 (2015)


385. Dependence of optical and electrical properties on Ag thickness in TiO2/Ag/TiO2 multilayer films for photovoltaic devices, Jun Ho Kim, Hankyeol Lee, Jin-Young Na, Sun-Kyung Kim, Young-Zo Yoo, Tae-Yeon Seong, Ceramics International, 41, 6, 8059-8063 (2015)


384. Highly flexible ZnO/Ag/ZnO conducting electrode for organic photonic devices, Jun Ho Kim, Jeong Hwan Lee, Sang-Woo Kim, Young-Zo Yoo, Tae-Yeon Seong, Ceramics International, 41, 5, 7146-7150 (2015)


383. Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices, Jun Ho Kim, Hankyeol Lee, Jin-Young Na, Sun-Kyung Kim, Young-Zo Yoo, Tae-Yeon Seong, Current Applied Physics, 15, 4, 452-155 (2015)


382. Improving performance of high-power indium gallium nitride/gallium nitride-based vertical light-emitting diodes by employing simple n-type electrode pattern, Woong-Sun Yum, June-O Song, Hwan-Hee Jeong, Jeong Tak Oh, Tae-Yeon Seong, Materials Science in Semiconductor Processing, 31, 209-213 (2015)


381. Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode, Jaecheon Han, Daehee Lee, Boram Jin, Hwan-Hee Jeong, June-O Song, Tae-Yeon Seong, Materials Science in Semiconductor Processing, 31, 153-159 (2015)


380. Ultrafast chemical lithiation of single crystalline silicon nanowires: in situ characterization and first principles modeling, Jong-Hyun Seo, Chia-Yun Chou, Yu-Hao Tsai, Yigil Cho, Tae-Yeon Seong, Woo-Jung Lee, Mann-Ho Cho, Jae-Pyoung Ahn, Gyeong S. Hwang, In-Suk Choi, RSC Advances, 5, 23, 17438-17443 (2015)


379. Realization of highly transparent and low resistance TiO2/Ag/TiO2 conducting electrode for optoelectronic devices, JunHo Kim, Dae-Hyun Kim, Tae-Yeon Seong, Ceramics International, 41, 2, 3064-3068 (2015)


378. Investigating the origin of efficiency droop by profiling the temperature across the multi-quantum well of an operating light-emitting diode, Euihan Jung, Gwangseok Hwang, Jaehun Chung, Ohmyoung Kwon, Jaecheon Han, Yong-Tae Moon, Tae-Yeon Seong, Applied Physics Letters, 106, 4, 041114 (2015)


377. Investigation of Fermi level pinning at semipolar (11-22) p-type GaN surfaces, Young-Yun Choi, Seongjun Kim, Munsik Oh, Hyunsoo Kim,Tae-Yeon Seong, Superlattices and Microstructures, 77, 76-81 (2015)


2014


376. Controlling interface oxygen for forming Ag ohmic contact to semi-polar (11-22) plane p-type GaN, Jae-Seong Park, Jaecheon Han, Tae-Yeon Seong, Superlattices and Microstructures, 75, 962-967 (2014)


375. Morphological stability of Ag reflector for high-power GaN-based vertical light-emitting diode by addition of Ni layer, Young-Yun Choi, Tae-Yeon Seong, Superlattices and Microstructures, 13, 342-349 (2014)


374. Use of graphene for forming Al-based p-type reflectors for near ultraviolet InGaN/AlGaN-based light-emitting diode, Dae-Hyun Kim, Jaecheon Han, Tae-Yeon Seong, Current Applied Physics, 14, 1176-1180 (2014)


373. Polarity dependence of the electrical characteristics of Ag reflectors for high-power GaN-based light emitting diodes, Jae-Seong Park, Jaecheon Han, Jun-Seok Ha, Tae-Yeon Seong, Applied Physics Letters, 104, 172104 (2014)


372. Graphene-titania films by supersonic kinetic spraying for enhanced performance of dye-sensitized solar cells, Do-Yeon Kim, Bhavana N. Joshi, Jung-Jae Park, Jong-Gun Lee, You-Hong Cha, Tae-Yeon Seong, Suk In Noh, Hyo-Jin Ahn, Salem S. Al-Deyabe, Sam S. Yoon, Ceramics International, 40, 11089-11097 (2014)


371. Graphene diffusion barrier for forming ohmic contact on N-polar n-type GaN for high-power vertical-geometry light-emitting diodes, Dae-Hyun Kim, Jae-Seong Park, Tae-Yeon Seong, Applied Physics Express, 7, 046501 (2014)


370. Highly transparent Nb-doped indium oxide electrodes for organic solar cells, Jun Ho Kim, Tae-Yeon Seong, Seok-In Na, Kwun-Bum Chung, Hye-Min Lee, Han-Ki Kim, Journal of Vacuum Science & Technology A, 32, 2, 021202 (2014)


369. Highly reliable Ti-based ohmic contact to N-polar n-type GaN for vertical-geometry light-emitting diodes by using a Ta barrier layer, Jae-Seong Park, Jaecheon Han, Tae-Yeon Seong, Optics Express, 22, A759-A764 (2014)


368. Delayed < 111 > texture for improving the thermal stability of Ag reflectors for high-performance GaN-based light-emitting diodes, Jun-Suk Sung, Jaecheon Han, Do-Young Noh, Tae-Yeon Seong, Scripta Materialia, 80, 5-8 (2014)


367. Effect of deposition temperature on the alignment of hexagonal laminates in turbostratic BN thin film, Eun-Sook Lee, Jong-Keuk Park, Wook-Seong Lee, Tae-Yeon Seong, Young-Joon Baik, Surface and Coatings Technology, 242, 29-33 (2014)


366. Vertical growth of core-shell III-V nanowires for solar cells application, D. Y. Kim, M. H. Bae, J. C. Shin, Y. J. Kim, Y. J. Lee, K. J. Choi, T.-Y. Seong, W. J. Choi, Journal of Nanoscience and Nanotechnology, 14, 4, 2913-2918 (2014)


365. Highly thermally stable Pd/Zn/Ag ohmic contact to Ga-face p-type GaN, Dae-Hyun Kim, Weon Cheol Lim, Jae-Seong Park, Tae-Yeon Seong, Journal of Alloys and Compounds, 588, 327-331 (2014)


364. Control of the preferred orientations of Cu(In,Ga)Se2 films and the photovoltaic conversion efficiency using a surface-functionalized molybdenum back contact, Ju-Heon Yoon, Won-Mok Kim, Jong-Keuk Park, Young-Joon Baik, Tae-Yeon Seong, Jeung-hyun Jeong, Progress in Photovoltaics, 22, 69-76 (2014)


363. Electrical properties of CIGS/Mo junctions as a function of MoSe2 orientation and Na doping, Ju-Heon Yoon, Jun-Ho Kim, Won Mok Kim, Jong-Keuk Park, Young-Joon Baik, Tae-Yeon Seong, Jeung-hyun Jeong, Progress in Photovoltaics, 22, 90-96 (2014)


2013


362. Improving the output power of near-ultraviolet InGaN/GaN-based light emitting diodes by enhancing the thermal and electrical properties of Ag-based reflector, Jae-Seong Park, Jaecheon Han, Jae-Woong Han, Heonjin Seo, Jung-Tak Oh, Tae-Yeon Seong, Superlattices and Microstructures, 64, 7-14 (2013)


361. Near ultraviolet InGaN/AlGaN-based light-emitting diodes with highly reflective tin-doped indium oxide/Al-based reflectors, Chang-Hoon Choi, Jaecheon Han, Jae-Seong Park, Tae-Yeon Seong, Optics Express, 26774-26779, (2013)


360. Nano-patterned dual-layer ITO electrode of high brightness blue light emitting diodes using maskless wet etching, Semi Oh, Pei-Chen Su, Yong-Jin Yoon, Soohaeng Cho, Joon-Ho Oh, Tae-Yeon Seong, Kyoung-Kook Kim, Optics Express, 21, A970-A976 (2013)


359. Origin of Size Dependency in Coherent-Twin-Propagation-Mediated Tensile Deformation of Noble Metal Nanowires, Jong-Hyun Seo, Harold S. Park, Youngdong Yoo, Tae-Yeon Seong, Ju Li, Jae-Pyoung Ahn, Bongsoo Kim, In-Suk Choi, Nano Letters, 13, 5112-5116 (2013)


358. Effect of deposition temperature on cubic boron nitride thin film deposited by unbalanced magnetron sputtering method with a nanocrystalline diamond buffer layer, Eun-Sook Lee, Jong-Keuk Park, Wook-Seong Lee, Tae-Yeon Seong, Young-Joon Baik, Metals and Materials International, 19, 1323-1326 (2013)


357. Electrical and optical characterization of the influence of chemical bath deposition time and temperature on CdS/Cu(In,Ga)Se2 junction properties in Cu(In,Ga)Se2 solar cells, Han-Kyu Seo, Eun-A Ok, Won-Mok Kim, Jong-Keuk Park, Tae-Yeon Seong, Dong WhaLee, Hoon Young Cho, Jeung-Hyun Jeong, Thin Solid Films, 546, 289-293 (2013)


356. Optical, electrical, and structural properties of ZrON/Ag/ZrON multilayer transparent conductor for organic photovoltaics application, Jun-Hyuk Song, Joon-Woo Jeon, Yong-Hyun Kim, Joon-Ho Oh, Tae-Yeon Seong, Superlattices and Microstructures, 62, 119-127(2013)


355. Effect of Different Quantum Well Structures on the Output Power Performance of GaN-Based Light-Emitting Diodes, Jaecheon Han, Gucheol Kang, Daesung Kang, Yongtae Moon, Hwanhee Jeong, June-O Song, Tae-Yeon Seong, Journal of Electronic Materials, 42, 10, 2876-2880 (2013)


354. Effect of different sputtering gas mixtures on the structural, electrical, and optical properties of p-type NiO thin films, Joon-Ho Oh, Soon YongHwang, Young Dong Kim, Jun-Hyuk Song, Tae-Yeon Seong, Materials Science in Semiconductor Processing, 16, 5, 1346-1351 (2013)


353. Improved efficiency of dye-sensitized solar cells through fluorine-doped TiO2 blocking layer, Suk In Noh, Kokn-Nara Bae, Hyo-Jin Ahn, Tae-Yeon Seong, Ceramics International, 39, 7, 8097-8101 (2013)


352. Dependence of thickness and temperature on the thermal stability of Ag films deposited on GaN layers for vertical-geometry GaN-based light-emitting diodes, Chang-Hyeong Lee, Jae-Seong Park, Tae-Yeon Seong, Superlattices and Microstructures, 61, 160-167 (2013)


351. Improving the light output power of GaN-based light-emitting diodes through the use of SiO2 cones, Se-Yeon Jung, Choe, J (Jongho Choe, Myung-Su Seok, Q-HanPark, Tae-Yeon Seong, Materials Science in Semiconductor Processing, 16, 3, 582-586 (2013)


350. Ag/Ni/Ag Multilayer Reflector for GaN-Based Vertical Light-Emitting Diode, Woong-Sun Yum, Joon-Woo Jeon, Jun-Suk Sung, Sungho Jin, Tae-Yeon Seong, Japanese Journal of Applied Physics, 52, 5, UNSP 052101 (2013)


349. Growth behavior of cubic boron nitride (cBN) phase in B-C-N film deposited on Si substrate with non-uniform ion flux, Seung-Min Lee, Tae-Yeon Seong, Wook-Seong Lee, Young-Joon Baik, Jong-Keuk Park, Metals and Materials International, 19, 3, 591-595 (2013)


348. Superhydrophilic Transparent Titania Films by Supersonic Aerosol Deposition, Jung-Jae Park, Do-Yeon Kim, LeeJong-Gun, Donghwan Kim, Joon-Ho Oh, Tae-Yeon Seong, Maikel F. A. M. van Hest, Sam S. Yoon, Journal of the American Ceramic Society, 96, 5, 1596-1601 (2013)


347. Buffer and anode-integrated WO3-doped In2O3 electrodes for PEDOT:PSS-free organic photovoltaics, Jun Ho Kim, Sin-Bi Kang, Ju-Hyun Lee, Yong-Hee Shin, Hyun-Su Shin, Dae-Gyeon Kwon, Tae-Yeon Seong, Yongsup Park, Seok-In Na, Han-Ki Kim, Organic Electronics, 14, 5, 1305-1312 (2013)


346. Effect of MnTiO3 surface treatment on the performance of dye-sensitized solar cells, Kokn-Nara Bae, Suk In Noh, Hyo-Jin Ahn, Tae-Yeon Seong, Materials Letters, 96, 67-70 (2013)


345. Effect of an In layer on the thermal stability of Ag reflector for vertical GaN-based light-emitting diodes, Woong-Sun Yum, Chang-Hyeong Lee, Sungho Jin, Tae-Yeon Seong, Superlattices and Microstructures, 56, 77-85 (2013)


344. Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters, Won Mok Kim, Jin Soo Kim, Jeung-hyun Jeong, Jong-Keuk Park,Young-Jun Baik, Tae-Yeon Seong, Thin Solid Films, 531, 430-435 (2013)


343. Effects of rapid thermal annealing on electrical, optical, and structural properties of Ni-doped In2O3 anodes for bulk heterojunction organic solar cells, Jun Ho Kim, Tae-Yeon Seong, Han-Ki Kim, Journal of Vacuum Science & Technology A, 31, 021201 (2013)


342. Silver-induced activation for improving the electrical characteristics of GaN-based vertical light-emitting diodes, Jae-Seong Park, Joon-Woo Jeon, Tae-Yeon Seong, Current Applied Physics, 13, 377-380 (2013)


341. Effect of a Mo back contact on Na diffusion in CIGS thin film solar cells, Ju-Heon Yoon, Tae-Yeon Seong, Jeung-Hyun Jeong, Progress in Photovoltaics, 21, 58-63 (2013)


2012


340. Improved Light Output Power of GaN-Based Flip-Chip Light-Emitting Diode Through SiO2 Cones, Se-Yeon Jung, Tae-Yeon Seong, Electronic Materials Letters, 8, 549-552 (2012)


339. Tuning Hydrophobicity with Honeycomb Surface Structure and Hydrophilicity with CF4 Plasma Etching for Aerosol-Deposited Titania Films, Do-Yeon Kim, Jung-Jae Park, Jong-Gun Lee, Min-Wook Lee, Ho-Young Kim, Joon-Ho Oh, Tae-Yeon Seong, Donghwan Kim, Scott C. James, Maikel F.A M. van Hest, Sanjeev Chandra, Sam S. Yoon, Journal of the American Ceramic Society, 95, 3955-3961 (2012)


338. Electrical, optical and etching properties of Zn-Sn-O thin films deposited by combinatorial sputtering, J.S. Kim, J.-K. Park, Y.J. Baik, W.M. Kim J. Jeong, T.-Y. Seong, Journal of the Korean Physical Society, 61, 1651-1655 (2012)


337. Comparative study on the thickness-dependent properties of ITO and GZO thin films grown on glass and PET substrates, J.S. Kim, J.-K. Park, Y.J. Baek, W.M. Kim, J. Jeong, T.-Y. Seong, Journal of the Korean Physical Society, 61, 1467-1470 (2012)


336. Enhanced ethanol sensing properties of TiO2 nanotube sensors, Youngjae Kwon, Hyunsu Kim, Sangmin Lee, In-Joo Chin, Tae-Yeon Seong, Wan In Lee, Chongmu Lee, Sensors and Actuators B-Chemical, 17, 441-446, (2012)


335. Rapid thermal annealed WO3-doped In2O3 films for transparent electrodes in organic photovoltaics, Jun Ho Kim, Yong-Hee Shin, Tae-Yeon Seong, Seok-In Na, Han-Ki Kim, Journal of Physics D-Applied Physics, 45, 395104, (2012)


334. Fabrication of Patterned Magnetic Nanomaterials for Data Storage Media, Chulmin Choi, Kunbae Noh, Cihan Kuru, Li-Han Chen, Tae-Yeon Seong, Sungho Jin, JOM, 64,1165-1173, (2012)


333. Fiber-optic waveguide coupled surface plasmon resonance sensor, Jae Heon Ahn, Tae Yeon Seong, Won Mok Kim, Taek Sung Lee, Inho Kim, Kyeong-Seok Lee, Optics Express, 20, 21729-21738, (2012)


332. Enhanced thermal stability of Ag ohmic reflector for InGaN/GaN light-emitting diode using a Ru capping layer, Jae-Seong Park, Joon-Woo Jeon, Chang-Hyung Lee, Chang-Hoon Choi, Sungho Jin, Tae-Yeon Seong, Superlattices and Microstructures, 52, 357-363, (2012)


331. Highly reliable Ag/Zn/Ag ohmic reflector for high-power GaN-based vertical light-emitting diode, Woong-Sun Yum, Joon-Woo Jeon, Jun-Suk Sung, Tae-Yeon Seong, Optics Express, 20, 19194-19199 (2012)


330. Nanostructure Ag dots for improving thermal stability of Ag reflector for GaN-based light-emitting diodes, Joon-Woo Jeon, Woong-Sun Yum, Semi Oh, Kyoung-Kook Kim, Tae-Yeon Seong, Applied Physics Letters, 101, 079903 (2012)


329. Carbon nanofibers combined with Pt nanoparticles for use as counter electrodes in dye-sensitized solar cells, Suk In Noh, Tae-Yeon Seong, Hyo-Jin Ahn, Journal of Ceramic Processing Research, 13, 491-494, (2012)


328. Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance, Jun-Hyuk Song, Joon-Ho Oh, Jae-Phil Shim, Jung-Hong Min,Dong-Seon Lee, Tae-Yeon Seong, Superlattices and Microstructures, 52, 299-305, (2012)


327. Electrical Characteristics of Ti/Al Ohmic Contacts to Molecular Beam Epitaxy-Grown N-polar n-type GaN for Vertical-Structure Light-Emitting Diodes, Joon-Woo Jeon,Tae-Yeon Seong, Gon Namgoong, Journal of Electronic Materials, 41, 2145-2150, (2012)


326. Effect of TiO2 nanopatterns on the performance of hydrogenated amorphous silicon thin-film solar cells, Joon-Ho Oh, Ji-Hwan Yang, Koeng Su Lim, Kang-Soo Han,Yang-Doo Kim, Heon Lee, Jun-Hyuk Song, Kyoung-Kook Kim, Tae-Yeon Seong, Thin Solid Films, 520, 6287-6290, (2012)


325. Nanostructure Ag dots for improving thermal stability of Ag reflector for GaN-based light-emitting diodes, Joon-Woo Jeon, Woong-Sun Yum, Semi Oh, Kyung-Kook Kim, Tae-Yeon Seong, Applied Physics Letters, 101, 021115, (2012)


324. Improved light output power of GaN-based light-emitting diodes by using Ag grids, Se-Yeon Jung, Joon-Ho Oh, Tae-Yeon Seong, Microelectronic Engineering, 95, 10-13, (2012)


323. Carrier transport mechanism of strained AlGaN/GaN Schottky contacts, Tae-Chul Nam, Ja-Soon Jang, Tae-Yeon Seong, Current Applied Physics, 12, 1081-1083, (2012)


322. Optical analysis of doped ZnO thin films using nonparabolic conduction-band parameters, JS Kim, JH Jeong, JK Park, YJ Baik, IH Kim, TY Seong, WM Kim, Journal of Applied Physics, 111, 123507, (2012)


321. Properties of ZnO Thin Films Co-Doped with Hydrogen and Fluorine, Yong Hyun Kim, Jin Soo Kim, Jeung-Hyun Jeong, Jong-Keuk Park, Young Joon Baik, Kyeong-Seok Lee, Byung-Ki Cheong, Donghwan Kim, Tae-Yeon Seong, Won Mok Kim, Journal of Nanoscience and Nanotechnology, 12, 3665-3668, (2012)


320. Improving the thermal Stability of Ag Ohmic Contacts for GaN-based Vertical Light-emitting Diodes with a Cu Capping Layer, Min-Kyoung Joo, Se-Yeon Jung, Tae-Yeon Seong, Journal of the Korean Physical Society, 60, 857-861 (2012)


319. Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-facen-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers, Joon-Woo Jeon, Woong-Sun Yum, Tae-Yeon Seong, Sang Youl Lee, June-O Sung, Journal of Vacuum Science & Technology B, 30, 020601 (2012)


318. Effects of Pt Junction on Electrical Transport of Individual ZnO Nanorod Device Fabricated by Focused Ion Beam, Sang-Won Yoon, Jong-Hyun Seo, Tae-Yeon Seong, Hoon Kwon, Kon Bae Lee, Jae-Pyoung Ahn, Journal of Nanoscience and Nanotechnology, 12, 1466-1470 (2012)


316. the Effects of Nitrogen Bonding on Hardness of AIN/CrN Multilayer Hard Coatings, Sang-Won Yoon, Jong-Hyun Seo, Keun-Hwa Chae, Jong-Keuk Park, Jong-Han Song, Vickram Jayaram, Kon-Bae Lee, Tae-Yeon Seong, Hoon-Kwon, Jae-Pyoung Ahn, Journal of Nanoscience and Nanotechnology, 12, 1476-1479 (2012)


315. Hardness and Nitrogen Bonding Structure of AxTi1-xN/CrN Multilayer Hard Coating, Jong-Hyun Seo, Sang-Won Yoon, Keun-Hwa Chae, Jong-Keuk Park, Jong-Han Song, Vickram Jayaram, Kon-Bae Lee, Tae-Yeon Seong, Hoon-Kwon, Jae-Pyoung Ahn, Journal of Nanoscience and Nanotechnology, 12, 1581-1584 (2012)


314. Ga Ordering and Electrical Conductivity in Nanotwin and Superlattice-Structured Ga-Doped ZnO, Sang-Won Yoon, Jong-Hyun Seo, Tae-Yeon Seong, Tae Hwan Yu, Yil Hwan You, Kon Bae Lee, Hoon Kwon, Jae-Pyoung Ahn, Crystal Growth & Design, 12, 1167-1172, (2012)


313. Improved thermal Stability of Ag Ohmic Contacts for GaN-Based Vertical Light-Emitting Diodes Using a Zn Capping Layer, Jae-Seong Park, Joon-Woo Jeon, Sungho Jin, Tae-Yeon Seong, Electrochemical and Solid State Letters, 15, H130-H132, (2012)


312. Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes, Joon-Woo Jeon, Sang Youl Lee, June-O Song, Tae-Yeon Seong, Current Applied Physics, 12, 225-227, (2012)


2011


311. Guided Nanostructures Using Anodized Aluminum Oxide Templates, Kunbae Noh, Karla S.Brammer, Tae-Yeon Seong, Sungho Jin, Nano, 6, 541-555,(2011)


310. Electrical characteristics of Cu-doped In2O3/Sb-doped SnO2 ohmic contacts for high-performance GaN-based light-emitting diodes, Joon-Ho Oh, Tae-Yeon Seong, H.-G. Hong, Kyoung-Kook Kim, S.-W Yoon,J.-P. Ahn, Journal of Electroceramics, 27, 109-113, (2011)


309. Highly Reliable Ohmic Contacts to N-Polar n-Type GaN for High-Power Vertical Light-Emitting Diodes, Joon-Woo Jeon, Sang Youl Lee, June-O Song, Tae-Yeon Seong, IEEE Photonics Technology Letters, 23, 1784-1786, (2011)


308. Improved Light Output of GaN-Based Light-Emitting Diodes by Using AgNi Reflective Contacts, Se-Yeon Jung, Sang Youl Lee, June-O Song, Sungho Jin, Tae-Yeon Seong, Journal of Electronic Materials, 40, 2173-2178, (2011)


307. Optical analysis of the microstructure of a Mo back contact for Cu(In,Ga)Se2 solar cells and its effects on Mo film properties and Na diffusivity, Ju-Heon Yoon, Sunghun Cho, Won Mok Kim, Young-Joon Baik, Taek Sung, Lee, Tae-Yeon Seong, Jeung-Hyun Jeong, Solar Energy Materials and Solar Cells, 95, 2959-2964, (2011)


306. High-temperature stability of molybdenum (Mo) back contacts for CIGS solar cells: a route towards more robust back contacts, Ju-Heon Yoon, Kwan-Hee Yoon, Won Mok Kim, Jong-Keuk Park, Young-Joon Baik, Tae-Yeon Seong, Jeung-Hyun Jeong, Journal of Physics D-Applied Physics, 44, 425302, (2011)


305. Effect of Ag nanoparticle size on the plasmonic photocatalytic properties of TiO2 thin films, Joon-Ho Oh, Hyunju Lee, Donghwan Kim, Tae-Yeon Seong, Surface & Coatings Technology, 206, 185-189, (2011)


304. Superplastic Deformation of Defect-Free Au Nanowires via Coherent Twin Propagation, Jong-Hyun Seo, Youngdong Yoo, Na-Young Park, Sang-Won Yoon, Hyoban Lee, Sol Han, Seok-Woo Lee, Tae-Yeon Seong, Seung-Cheol Lee, Kon-Bae Lee, Pil-Ryung Cha, Harold S. Park, Bongsoo Kim, Jae-Pyoung Ahn, Nano Letters, 11, 3499-3502, (2011)


303. Facile Control of C2H5OH Sensing Characteristics by Decorating Discrete Ag Nanoclusters on SnO2 Nanowire Networks, In-Sung Hwang, Joong-Ki Choi, Hyung-Sic Woo, Sun-Jung Kim, Se-Yeon Jung,Tae-Yeon Seong, Il-Doo Kim, Jong-Heun Lee, ACS Applied Materials & Interfaces, 3, 3140-3145, (2011)


302. One-pot fabrication of hollow SiO2 nanowires via an electrospinning technique, Geon-Hyoung An, Sang-Yong Jeong, Tae-Yeon Seong, Hyo-Jin Ahn, Materials Letters, 65, 2377-2380, (2011)


301. Effect of oxygen plasma-induced current blocking on the performance of GaN-based vertical light-emitting diodes, Sang Youl Leee, Kwang Ki Choi, Hwan Hee Jeong, Eun Joo Kim, June O. Song, Joon-Woo Jeon, Tae-Yeon Seong, Journal of Vacuum Science & Technology B, 29, 041203, (2011)


300. Thermally Stable and Reflective RhZn/Ag Ohmic Contacts to p-type GaN for Near-UV Flip-chip Light-emitting Diodes, Seong-Han Park, Joon-Woo Jeon, Jeong-Tak Oh, Tae-Yeon Seong, Journal of the Korean Physical Society, 59, 156-160, (2011)


299. Improved Output Power of GaN-Based Vertical Light Emitting Diodes Fabricated with Current Blocking Region Formed by O2 Plasma Treatment, Sang Youl Lee, Kwang Ki Choi, Hwan Hee Jeong, Eun Joo Kim, Hyo Kun Son, Sung Jin Son, June-O Song, Tae-Yeon Seong, Japanese Journal of Applied Physics, 50, 076504, (2011)


298. Improving the thermal stability of nickel monosilicide thin films by combining annealing with the use of an interlayer and a capping layer, Bong-Jun Park, Sang-Yong Jeong, Jun-Ho Kim, Tae-Yeon Seong,Chel-Jong Choi, Journal of Vacuum Science & Technology A, 29, 031503, (2011)


297. Improved Electrostatic Discharge Protection in GaN-Based Vertical Light-Emitting Diodes by an Internal Diode, Hwan Hee Jeong, Sang Youl Lee, Jung-Hyeok Bae, Kwang Ki Choi, June-O Song, Sung Jin Son, Yong-Hyun Lee, Tae-Yeon Seong, IEEE Photonics Technology Letters, 23, 423-425, (2011)


296. Preparation and characterization of electro-spun RuO2-Ag2O composite nanowires for electrochemical capacitors, Jung-Bae Lee, Sang-Yong Jung, Won-Jin Moon, Tae-Yeon Seong, Hyo-Jin Ahn, Journal of Alloys and Compounds, 509, 4336-4340, (2011)


295. Growth of amorphous silica nanowires using nickel silicide catalyst by a thermal annealing process, Jin-Bok Lee, Chel-Jong Choi, Tae-Yeon Seong, Current Applied Physics, 11, 192-202, (2011)


294. Synthesis and characterization of Co3O4/RuO2 composite nanofibers fabricated by an electrospinning method, Sang-Yong Jung, Hyo-Jin Ahn, Tae-Yeon Seong, Materials Letters, 65, 471-473, (2011)


293. Electrochemical properties of the carbon-coated lithium vanadium oxide anode for lithium ion batteries, SangMin Lee, Hyung Sun Kim, Tae-Yeon Seong, Journal of Alloys and Compounds, 509, 3136-3140, (2011)


292. Effects of deposition temperatures and annealing conditions on the microstructural, electrical and optical properties of polycrystalline Al-doped ZnO thin films, Joon-Ho Oh, Kyoung-Kook Kim, Tae-Yeon Seong, Applied Surface Science, 257, 2731-2736, (2011)


291. Highly self-assembled nanotubular aluminum oxide by hard anodization, Kunbae Noh, Karla S. Brammer, Hyunsu Kim, Se-Yeong Jung,Tae-Yeon Seong, Sungho Jin, Journal of Materials Research, 26, 186-193, (2011)


2010


290. Synthesis and characterization of Co3O4/RuO2 composite nanofibers via electrospinning, S-Y Jeong, H-J Ahn, and T-Y Seong, Materials Letters, In Press (2010)


289. Effects of Deposition Temperatures and Annealing Conditions on the Microstructural, Electrical and Optical Properties of Polycrystalline Al-doped ZnO Thin Films, J-H Oh, K-K Kim, and T-Y Seong, Applied Surface Science, In Press (2010)


288. Growth of amorphous silica nanowires using nickel silicide catalyst by a thermal annealing process, J-B Lee, C-J Choi, and T-Y Seong, Current Applied Physics, In Press (2010)


287. Structural and electrochemical properties of Ag nano-dots combined amorphous Si electrodes for thin-film lithium rechargeable batteries, H-J Ahn, Y-S Kim, H-S Shim, B K Park, W-J Moon, W B Kim, T-Y Seong, Journal of Nanoscience and Nanotechnology, 10 (2010) 8199


286. Fabrication of monolithic polymer nanofluidic channels using nanowires as sacrificial templates, K S Chu, S Kim, H Chung, J-H Oh, T-Y Seong, B An, Y K Kim, J H Park, Y R Do and W Kim, Nanotechnology, 21 (2010)


285. Hydrogen in polycrystalline ZnO thin films, W M Kim, Y H Kim, J S Kim, J Jeong, Y-J Baik, J-K Park, K S Lee and T-Y Seong, Journal of Physics D: Applied Physics, 43, 365406 (2010)


284. Effect of composition and deposition temperature on the characteristics of Ga-doped ZnO thin films, Y. H. Kim, J. Jeong, K. S. Lee, B. Cheong, T.-Y. Seong, W. M. Kim, Applied Surface Science, 257, 109 (2010)


283. Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical LEDs, J-W Jeon, S-H Park, S-Y Jung, S Y Lee, J Moon, J-O Song, T-Y Seong, Applied Physics Letters, 97, 092103 (2010)


282. Low-resistance CrB2/Ti/Al n-type ohmic contacts to N-face n-GaN for high-power GaN-based vertical LEDs, S-H Park, J-W Jeon, S Y Lee, J Moon, J-O Song, T-Y Seong, Electrochemical and Solid-State Letters, 13, H333 (2010)


281. Epitaxial growth of Cr2O3 thin film on Al2O3 (0001) substrate by radio frequency magnetron sputtering combined with rapid-thermal annealing, S-Y Jeong, J-B Lee, H Na, T-Y Seong, Thin Solid Films, 518, 4813 (2010)


280. Improvement of the light output power of GaN-based vertical light emitting diodes by a current blocking layer, H H Jeong, S Y Lee, Y K Jeong, K K Choi, J-O Song, Y-H Lee, T-Y Seong, Electrochemical and Solid-State Letters, 13, H237 (2010)


279. Characteristics of ZnO:Al thin films co-doped with hydrogen and fluorine, Y.H. Kim, J. Jeong, K.S. Lee, J.K. Park, Y.J. Baik, T.-Y. Seong, W.M. Kim, Applied Surface Science, 256, 5102 (2010)


278. Electrical, structural and etching characteristics of ZnO:Al films prepared by rf magnetron sputtering, Y H Kim, K S Lee, T S Lee, B-K Cheong, T-Y Seong, W M Kim, Current Applied Physics, 10, S278 (2010)


277. Insights into the reactive ion etching mechanism of nanocrystalline diamond films as a function of film microstructure and the presence of fluorine gas, J H Yoon, W S Lee, J K Park, G W Hwang, Y J Baik, T-Y Seong, J-H Jeong, Journal of Applied Physics, 107, 044313 (2010)


276. Dual-color emission in hybrid III nitride/ZnO LEDs, G. Namkoong, E. Trybus, M.C. Cheung, W.A. Doolittle, A.N. Cartwright, I. Ferguson, T.-Y. Seong, and J. Nause, Applied Physics Express, 3, 022101 (2010)


275. Improved electrical and thermal properties of nickel silicide by using NiCo interlayer, Jin-Bok Lee, Sang-Yong Jeong, Bong-Jun Park, Chel-Jong Choi, Kwon Hong, Sung-Jin Whang, Tae-Yeon Seong, Superlattice and Microstructures, (2010)


274. Electrical characteristics of V/Ti/Au contacts to Ga-polar and N-polar n-GaN prepared by different methods, J-W Jeon, S-H Park, S-Y Jung, J Moon, J-O Song, G Namgoong, T-Y Seong, Electrochemical and Solid-State Letters, 13, H125 (2010)


273. Improved light output power of GaN-based light-emitting diodes by enhancing current spreading using single wall carbon nanotubes, Se-Yeon Jung, Kyung-Heon Kim, Sang-Yong Jeong, Joon-Woo Jeon, Sang Yeol Lee, June-O Song, Young-Tae Byun, Tae-Yeon Seong, Electrochemical and Solid-State Letters, 13 (2), H33 (2010) --- selected for the December 14, 2009 issue of Virtual Journal of Nanoscale Science & Technology


272. Ohmic contact technology for GaN-based LEDs: Role of p-type Contact, J O Song, J-S Ha, T-Y Seong, IEEE Transactions on Electron Devices, 57, 42 (2010)


2009


271. Ohmic Contact Technology For GaN-Based Light Emitting Diodes: Role of P-Type Contact, J-O Song, J-S Ha, and T-Y Seong, IEEE Transactions on Electron Devices (invited article), (in press), (2009)


270. Improved Electrical and thermal Properties of Ag Contacts for GaN-based Flip-Chip Light-Emitting Diodes by using a NiZn Alloy Capping Layer, S-Y Jung, H-Y Kim, and T-Y Seong, Superlattices and Microstructures, 46, 578-584, (2009)


269. Electrical Properties of Ti/Al Ohmic Contacts to Sulfur-Passivated N-Face n-Type GaN for Vertical-Structure Light-Emitting Diodes, S-Y Jung, T-Y Seong, H-S Kim, K-S Park, J-G Park, and G Namgoong, Electrochemical and Solid-State Letters, 12, H275, (2009)


268. Effects of substrate temperature and Zn addition on the properties of Al-doped ZnO films prepared by magnetron sputtering, Y.H. Kim, K.S. Lee, T.S. Lee, B. Cheong, T.-Y. Seong, and W.M. Kim, Applied Surface Science, 255, 7251, (2009)


267. Carrier Concentration Dependence of the Electrical Behaviors of ITO Contacts on n-Type ZnO, S-H Kim, D-K Hwang, S-J Park, and T-Y Seong, Journal of the Korean Physical Society, 54, 740, (2009)


266. Electrical Characteristics of Metal Contacts to Laser-Irradiated N-Polar n-Type GaN, H-S Kim, J-H Ryou, R. D. Dupuis, T-S Jang, Y-J Park, S-N Lee, and T-Y Seong, IEEE Electron Device Letters, 30, 319, (2009)


265. Aggregation-Free Process for Functional CdSe/CdS Core/Shell Quantum Dots, J-H Moon, K-S Choi, B-J Kim, K-H Yoon, T-Y Seong, and K-J Woo, Journal of Physical Chemistry C, 113, 7114, (2009)


264. Cellular uptake of folate-conjugated lipophilic superparamagnetic iron oxide nanoparticles, K-J Woo, J-H Moon, K-S Choi, T-Y Seong, K-H Yoon, Journal of Magnetism and Magnetic Materials, 321, 1610, (2009)


263. Electrical properties and microstructural characterization of single ZnO nanowire sensor manufactured by FIB, S-W Yoon, J-H Seo, K-H Kim, J-P Ahn, T-Y Seong, K-B Lee, H Kwon, Thin Solid Films, 517, 4003, (2009)


262. Three-Dimensional Nanostructured Carbon Nanotube array/PtRu Nanoparticle Electrodes for Micro-Fuel Cells, H-J Ahn, W-J Moon, T-Y Seong, and D. Wang, Electrochemistry Communications, 11, 635, (2009)


261. Photoluminescence investigation of rare-earth activated GdCa3(GaO) 3(BO3) 4 phosphors under UV excitation, H-A Kyung, S-H Choi, T-Y Seong, and H-K Jung, Materials Research Bulletin, 44, 789, (2009)


260. Effect of Pt nanostructures on the electrochemical properties of Co3O4 electrodes for micro-electrochemical capacitors, H-J Ahn and T-Y Seong, Journal of Alloys and Compounds, 478, L8, (2009)


259. Effect of fluorine doping on the properties of ZnO films deposited by radio frequency magnetron sputtering, D. Y. Ku, Y-H Kim, K-S Lee, T-S Lee, B Cheong, T-Y Seong, and W-M Kim, Journal of Electroceramics, (2009)


258. Optimum condition for the synthesis of Pt-CeO2 nanocomposite electrodes for thin-film fuel cells, H-J Ahn, J-S Jang, Y-E Sun, and T-Y Seong, Journal of Alloys and Compounds, 473, L28, (2009)


257. Co-sputtering growth and electro-oxidation properties of Pt-CuO nanocomposites for direct methanol thin film fuel cells, H-J Ahn, H-S Shim, W-B Kim, Y-E Sung, and T-Y Seong, Journal of Alloys and Compounds, 471, L39, (2009)


256. TiN/Al Ohmic contacts to N-face n-type GaN for high-performance vertical light-emitting diodes, J-W Jeon, T-Y Seong, H-S Kim, and K-K Kim, Applied Physics Letters, 94, 042102 (2009)


255. Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN, V. R. Reddy, S-H Kim, H-G Hong, S-W Yoon, Jae-Pyoung Ahn, and T-Y Seong, Journal of Materials Science: Materials in Electronics, 20, 9 (2009)



2008


254. Electrical characteristics of contacts to thin film N-polar n-type GaN, H-S Kim, J-H Ryou, R. D. Dupuis, S-N Lee, Y-J Park, J-W Jeon, and T-Y Seong, Applied Physics Letters, 19, 192106 (2008)


253. Modulated Contrast and Associated Diffracted Intensity of GaPySb1-y Layers Grown Using Organometallic Vapor Phase Epitaxy, T-Y Seong, G. R. Booker, A. G. Norman, F. Glas, G. B. Stringfellow, Journal of the Korean Physical Society, 52, 471 (2008)


252. Low-resistance and transparent Ni-Co solid solution/Au ohmic contacts to p-type GaN for green GaN-based light-emitting diodes, K-W Kim, H-G Hong, J-O Song, J-H Oh, T-Y Seong, Superlattices and Microstructures, 44, 735 (2008)


251. Light extraction enhancement of GaN-based light emitting diodes using MgF2/Al omnidirectional reflectors, H Kim, S-N Lee, Y Park, K-K Kim, J-S Kwak and T-Y Seong, Journal of Applied Physics, 104, 053111 (2008)


250. Co(OH) 2-combined carbon-nanotube array electrodes for high-performance micro-electrochemical capacitors, HJ Ahn, WB Kim and T-Y Seong, Electrochemistry Communications, 10, 1284 (2008)


249. Density-of-state effective mass and non-parabolicity parameter of impurity doped ZnO thin films, W M Kim, I H Kim, J H Ko, B Cheong, T S Lee, K S Lee, D Kim and T-Y Seong, Journal of Physics D: Applied Physics, 41, 195409 (2008)


248. Ordered domain structures of nitrogen-doped GaInP layers grown by organometallic vapor phase epitaxy, B-J Kim, Y-W Ok, T-Y Seong, D. C. Chapman, G. B. Stringfellow, Journal of Materials Science: Materials in Electronics, 19, 1092 (2008)


247. Metallization contacts to nonpolar a-plane n-type GaN, H Kim, S-N Lee, Y Park, J S Kwak , T-Y Seong, Applied Physics Letters, 93, 032105 (2008)


246. Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures, H Kim, S-N Lee, Y Park, K-K Kim, J.S Kwak, T-Y Seong, Optics Letters, 33, 1273 (2008)


245. High-efficiency GaN-based light-emitting diodes fabricated with metallic hybrid reflectors, H Kim, S-N Lee, Y Park, T-Y Seong, IEEE Electron Device Letters, 29, 582 (2008)


244. Crystalline Ag nanocluster-incorporated RuO2 as an electrode material for thin-film micropseudocapacitors, H-J Ahn, Y-E Sung, W.B. Kim, T-Y Seong, Electrochemical and Solid-State Letters, 11, A112 (2008)


243. Possible Ohmic mechanism of Ag/indium tin oxide p-type contacts for high-brightness GaN-based LEDs, J-O Song, H-G Hong, J-W Jeon, J-I Sohn, J-S Jang, T-Y Seong, Electrochemical and Solid-State Letters, 11, H36 (2008)


242. Modulated structures and associated diffracted intensity of GaPSb layers grown by OMVPE, T-Y Seong, G. R. Booker, A. G. Norman, G. B Stringfellow, Journal of the Korean Physical Society, 52, 471 (2008)


241. Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p-contacts, H Kim, J Cho, Y Park, T-Y Seong, Applied Physics Letters, 92, 092115 (2008)



2007


240. Formation of low-resistance and transparent ITO ohmic contact for high-brightness GaN-based LEDs using a Sn-Ag interlayer, J O Song, K-K Kim, H. Kim, Y-H Kim, H-G Hong, H Na, T-Y Seong, Materials Science in Semiconductor Processing, 10, 211 (2007)


239. Electrochromism of Sn-modified WO3 electrodes prepared from sol-gel method, H-J Ahn , H-S Shim, Y-E Sung , T-Y Seong, W B Kim, Electrochemical and Solid-State Letters, 10(12), E27 (2007)


238. Enhanced light output of GaN-based LEDs by using omnidirectional sidewall reflectors, H Kim, K H Baik, J Cho, K-K Kim, S-N Lee, C Sone, Y Park, T-Y Seong, IEEE Photonics Technology Letters, 19(17-20): 1562 (2007)


237. Formation mechanisms of low-resistance and thermally stable Pd/Ni/Pd/Ru ohmic contacts to Mg-doped AlGaN, J-S Jang, T-Y Seong, S-R Jeon, Applied Physics Letters, 91, 092129 (2007)


236. Consideration of actual current-spreading length of GaN-based light emitting diodes for high-efficiency design, H Kim, J Cho, J W Lee, S Yoon, H Kim, C Sone, Y Park, and T-Y Seong, IEEE Journal of Quantum Electronics, 43, 625 (2007)


235. Effect of a Mo interlayer on the electrical properties of Ni-silicided n+/p diode and n+ poly-Si gate electrode, Y-W Ok, D Kim, C-J Choi, S Baek, H Yang, T-Y Seong, Journal of the Electrochemical Society, 154, H822 (2007)


234. Thickness effect of a Ge interlayer on the formation of nickel silicides, C-J Choi , S-Y Chang , S-J Lee , Y-W Ok, T-Y Seong, Journal of the Electrochemical Society, 154, H759 (2007)


233. High transmittance NiSc/Ag/ITO p-type ohmic electrode for near-UV GaN-based LEDs, H-G Hong, H Na, T-Y Seong, T. Lee, J-O Song, K-K Kim, Journal of the Korean Physical Society, 51, 159 (2007)


232. Effect of different metal deposition methods on the growth behaviors of CNTs, J I Sohn, Y-W Ok, T-Y Seong and, S Lee, Journal of Applied Physics, 102, 014301 (2007)


231. Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry, H Kim, K-K Kim, K-K Choi, H Kim, K H Baik, J Cho, J-O Song, C Sone, Y Park, T-Y Seong, Applied Physics Letters, 91, 023510 (2007)


230. In/ITO p-type electrode for high-brightness GaN-based LEDs, J O Song, K-K Kim, H Kim, H-G Hong, H Na, and T-Y Seong, Electrochemical and Solid-State Letters, 10, H270 (2007)


229. Formation of Sb-doped SnO2 p-type ohmic contact for near-UV GaN-based LEDs by using a Cu-doped indium oxide interlayer, H-G Hong, J-O Song, H Na, H Kim, K-K Kim, T-Y Seong, Electrochemical and Solid-State Letters, 10, H254 (2007)


228. Electrical and optical properties of a-Si/c-Si heterojunction solar cells with passivated interface by patterned SiO2, Y-W Ok, T-Y Seong, D Kim, S-K Kim, J C Lee, K H Yoon, Solar Energy Materials and Solar Cells, 91, 1366 (2007)


227. Enhancement of the light output of GaN-based LEDs with surface-patterned ITO electrodes by maskless wet-etching, D-S Leem, T. Lee, T-Y Seong, Solid-State Electronics, 51, 793 (2007)


226. Pt-embedded MoO3 Electrodes for rechargeable lithium batteries, Y-S Kim, H-J Ahn, H-S Shim, S H Nam, T-Y Seong, and W B Kim, Electrochemical and Solid-State Letters, 10, A180 (2007)


225. Electrical and thermal stability of Ag ohmic contacts for GaN-based flip-chip light-emitting diodes by using an AgAl alloy capping layer, Y. T. Hwang, H.-G. Hong, T-Y Seong, D-S Leem, T Lee, K-K Kim, J-O Song, Y Park, Materials Science in Semiconductor Processing, 10, 14 (2007)


224. Enhanced light extraction in GaN-based LEDs with textured n-type layers, H. Kim, J. Cho, J. W. Lee, S.o Yoon, H. Kim, C. Sone, Y.o Park, T.-Y. Seong, Applied Physics Letters, 90, 161110 (2007)


223. Recovery of dry etch-induced damage of nano-patterned GaN-based light-emitting diodes by rapid-thermal-annealing, Hyun-Gi Hong, S.-S. Kim, D.-Y. Kim, T Lee, K-K Kim, June-O. Song, J. H. Cho, and T-Y Seong, Physica Status Solidi (A), 204, No. 3, 881 (2007)


222. High-reflectance and thermally stable AgCu alloy p-type reflectors for GaN-based light emitting diodes, H S Kim, K H Baik, J Cho, J W Lee, S Yoon, H Kim, S-N Lee, C Sone, Y Park, and T-Y Seong, IEEE Photonics Technology Letters, 19, 336 (2007)


221. Electronic transport mechanism for nonalloyed Ti-Based Ohmic contacts to strained n-AlGaN/GaN heterostructure, J-S Jang, T-Y Seong, and S-R Jeon, Electrochemical and Solid-State Letters, 10, H120 (2007)


220. Measurements of current spreading length and design of GaN-based light emitting diodes, H Kim, J Cho, J W Lee, S Yoon, H. Kim, C Sone, Y Park, T-Y Seong, Applied Physics Letters, 90, 063510 (2007)


219. Low-resistance and thermally stable indium tin oxide ohmic contacts on strained p-In0.15Ga0.85N/p-GaN layer, J-S Jang, T-Y Seong, Journal of Applied Physics, 101, 013711 (2007)


2006


218. Nanoparticle embedded p-type electrodes for GaN-based flip-chip LEDs, J. S. Kwak, J.-O. Song, T.-Y.Seong, B. I. Kim, J. Cho, C. Sone, Y. Park, Journal of Nanoscience and Nanotechnology, 6, 3547 (2006)


217. Formation and characterization of Cu-Si nanocomposite electrodes for echargeable Li batteries, H-J Ahn, Y-S Kim, Y E Sung, T-Y Seong, W B Kim, Journal of Power Sources, 163, 211 (2006)


216. Formation mechanism of cerium oxide-doped indium oxide/Ag Ohmic contacts on p-type GaN, D-S Leem, T-W Kim, T Lee, J-S Jang, Y-W Ok, T-Y Seong, Applied Physics Letters, 89, 262115 (2006)


215. Ni implantation-induced enhancement of the crystallisation of amorphous Si, Y.-W. Ok, T.-Y. Seong, C.-J. Choi and K. N. Tu, Journal of Materials Science: Materials in Electronics. 17, 979 (2006)


214. Characteristics of Hydrogen Storage Alloy p-GaN Ohmic Contacts for InGaN LEDs, S. W. Chae, J. S. Kwak, S. K. Yoon, M. Y. Kim, J.-O Song, T. Y. Seong, T. G. Kim, Journal of the Korean Physical Society, 49, 899 (2006)


213. Electronic transport mechanisms of nonalloyed Ti-based ohmic contacts on n-AlGaN, J-S Jang, T-Y Seong, S-R Jeon, Journal of Applied Physics, 100, 046106 (2006)


212. Electrical properties of nonalloyed Ni/Au contacts to KrF excimer laser-irradiated p-type GaN, M-S Oh, J-S Jang, S Park, T-Y Seong, Journal of Materials Science: Materials in Electronics, 17, 831(2006)


211. Ir/Ag reflector for high-performance GaN-based UV LEDs, K-Y Ban, H-G Hong, D-Y Noh, J I Sohn, D.-J. Kang, and T-Y Seong, Materials Science and Engineering: B, 133, 26 (2006)


210. Electrochemical and structural properties of MoO-VO nanocomposite thin film electrodes for lithium rechargeable batteries, Y-S Kim, H-J Ahn, H-S Shim, T-Y Seong, Solid State Ionics, 177, 1323 (2006)


209. Effects of oxygen partial pressure on the electrical and optical properties of pulsed-laser-deposited Sb-doped SnO films, H-G Hong, J-O Song, S-H Kim, and T-Y Seong, Journal of the Electrochemical Society, 153, G922 (2006)


208. Low turn-on voltage and series resistance of polarization-induced InGaN-GaN LEDs by using p-InGaN/p-GaN superlattice, J-S Jang and T-Y Seong, IEEE Photonics Technology Letters, 18, 1536 (2006 )


207. Modified electrochromism of tungsten oxide via Pt nanophases, K-W Park, H-S Shim , T.-Y. Seong, Y-E Sung, Applied Physics Letters, 88, 211107 (2006)


206. Schottky barrier characteristics of Pt contacts to n-type InGaN, J-S Jang, D Kim, T-Y Seong, Journal of Applied Physics, 99, 073704 (2006)


205. Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes, H-G Hong, S-S Kim, D-Y Kim, T Lee, J-O Song, J H Cho, C Sone, Y Park, and T-Y Seong, Semiconductor Science and Technology, 21, 594 (2006)


204. High-quality tin zinc oxide/Ag ohmic contacts for GaN-based UV flip-chip LEDs, H-G Hong, K-Y Ban, J-O Song, J. Cho, Y. Park, J. S. Kwak, I. T. Ferguson, T-Y Seong, Physica Status Solidi (C), 3, 2133 (2006)

203. Role of nitrogen precursor supplies on InAs quantum dot surfaces in their emission wavelengths, I Suemune, G. Sasikala, H. Kumano, K. Uesugi, Y. Nabetani, T. Matsumoto, J.-T. Maeng, T.-Y. Seong, Japanese Journal of Applied Physics, 45, L527 (2006)


202. Formation of low-resistance transparent Ni/Au ohmic contacts to polarization field-induced p-InGaN/GaN superlattice, J-S Jang, S-J Sohn, Donghwan Kim, and T-Y Seong, Semiconductor Science and Technology, 21 L37 (2006)


201. Formation of low resistance nonalloyed ohmic contacts to p-type GaN by KrF laser irradiation, M-S Oh, J-S Jang, S-H Kim, T-Y Seong, Physica Status Solidi (C), 3, 1717 (2006)


200. Low resistance and highly reflective ohmic contacts to p-type GaN using transparent interlayers for flip-chip LEDs, J-O Song, J. S. Kwak, H-G Hong, I. T. Ferguson, T-Y Seong, Physica Status Solidi (C), 3, 2207 (2006)


199. Improvement of the reverse leakage behavior of Ag-based ohmic contacts for GaN-based LEDs using MgZnO interlayer, H-G Hong, J-O Song, T Lee, I. T. Ferguson, J S Kwak and T-Y Seong, Materials Science and Engineering: B, 129, 176 (2006)


198. Enhancement of the light output of GaN-based UV LEDs by an one-dimensional nano-patterning process, H-G Hong, S-S Kim, D-Y Kim, T Lee, J-O Song, J. H. Cho C. Sone, Y. Park, and T-Y Seong, Applied Physics Letters, 88, 103505 (2006)


197. Electrochemical capacitors fabricated with carbon nanotubes grown within the pores of anodized aluminum oxide templates, H-J Ahn, J I Sohn, Y-S Kim, H-S Shim, W B Kim, T-Y Seong, Electrochemistry Communications, 8, 513 (2006)


196. Field emission from Ni-disilicide nanorods formed by using implantation of Ni in Si coupled with laser annealing, Y-W Ok, T-Y Seong, C-J Choi, and K. N. Tu, Applied Physics Letters, 88, 043106 (2006)


195. Improvement of the ohmic behaviour of Pd contacts to p-type GaN using an Ag interlayer, J-O Song, J. S. Kwak, T-Y Seong, Semiconductor Science and Technology, 21, L7 (2006)


194. Characteristics of Pt Schottky contacts on hydrogen peroxide treated n-type ZnO (0001) layers, S-H Kim, H-K Kim and T-Y Seong, Superlattices and Microstructures, 39, 211 (2006)


2005


193. Improvement of the electrical performance of near UV GaN-based LEDs using Ni nanodots, J-O Song, H Kang, and I. T. Ferguson, S-P Jung, H. P. Lee, H-G Hong and T-Y Seong, Solid-State Electronics, 49, 1986 (2005)


192. Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering, K-K Kim, H Tampo, J-O Song, T-Y Seong, S-J Park, J-M Lee, S-W Kim, S Fujita, S Niki, Japanese Journal of Applied Physics, 44, 4776 (2005)


191. Light output enhancement of GaN-based LEDs by using hole-patterned transparent indium tin oxide electrodes, D-S Leem, J Cho, C Sone and Y Park, T-Y Seong, Journal of Applied Physics, , 076107 (2005)


190. Fabrication of high-density arrays of individually-isolated nanocapacitors using anodic aluminum oxide templates and carbon nanotubes, J I Sohn, Y-S Kim, C Nam, B. K. Cho, T-Y Seong, S Lee, Applied Physics Letters, 87, 123115 (2005>


189. Growth of nominally undoped p-type ZnO by pulsed laser deposition, M-S Oh, S-H Kim, and T-Y Seong, Applied Physics Letters, 87, 122103 (2005)


188. Highly reflective and low resistance ITO/Ag ohmic contacts to p-type GaN for flip-chip LEDs, W-K Hong, J-O Song, H-G Hong, K-Y Ban, T Lee, J. S. Kwak, Y. Park, and T-Y Seong, Electrochemical and Solid-State Letters, 8, G320 (2005)


187. Formation of low resistance nonalloyed Ti/Au ohmic contacts to n-type ZnO by KrF excimer laser irradiation, M-S Oh, S-H Kim, D-K Hwang, S-J Park, and T-Y Seong, Electrochemical and Solid-State Letters, 8, G317 (2005)


186. Formation of high-quality Ag-based ohmic contact to p-type GaN for UV LEDs using a tin zinc oxide interlayer, H-G Hong, W-K Hong, K-Y Ban, T Lee, T-Y Seong, J-O Song, J S Kwak, Electrochemical and Solid-State Letters, 8, G280 (2005)


185. Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots, I-K Park, M-K Kwon, S-H Baek, Y-W Ok, T-Y Seong, and S-J Park, Y-S Kim, Y-T Moon, and D-J Kim, Applied Physics Letters, 87, 061906 (2005)


184. Use of an indium zinc oxide interlayer for forming Ag-based ohmic contacts to p-type GaN for UV LEDs, K-Y Ban, H-G Hong, D Y Noh, T-Y Seong, J-O Song, D Kim, Semiconductor Science and Technology, 20, 921 (2005)


183. Zn/Au ohmic contacts on n-type ZnO epitaxial layers for light-emitting devices, S-H Kim, S-W Jeong, D-K Hwang, S-J Park and T-Y Seong, Electrochemical and Solid-State Letters, 8, G198 (2005)


182. Improvement of the light output of InGaN-based LEDs using Cu-doped indium oxide/indium tin oxide p-type electrodes, J-O Song, S. Kwak, Y. Park, and T-Y Seong, Applied Physics Letters, 86, 213505 (2005)


181. Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes, H-K Kim, D.-G. Kim, K.-S. Lee, M.-S. Huh, S. H. Jeong, K. I. Kim, T-Y Seong, Applied Physics Letters, 86, 183503 (2005)


180. Low-resistance and reflective Zn/Rh contacts to p-type GaN for flip-chip light-emitting diodes, J-O Song, W-K Hong, W-G Hong, K-K Kim, and T-Y Seong, Electrochemical and Solid-State Letters, 8, G227 (2005)


179. Synthesis and characterization of NiO-Ta2O5 nanocomposite electrode for electrochromic devices, H-J Ahn, H-S Shim, Y-S Kim, C-Y Kim, T-Y Seong, Electrochemistry Communications, 7, 567 (2005)


178. Pt/indium tin oxide ohmic contacts to arsenic-doped p-type ZnO layers, S-H Kim, J-T Maeng, C-J Choi, J H Leem, M S Han and T-Y Seong, Electrochemical and Solid-State Letters, 8, G167 (2005)


177. Formation of high-quality ohmic contacts to p-GaN for flip-chip light-emitting diodes using Ag/TiNx/Al scheme, D-S Leem, J-T Maeng, D-Y Lee, and T-Y Seong, Electrochemical and Solid-State Letters, 8, G150 (2005)


176. Visualization of methanol concentration using the electrochromism of nickel oxide, H-S Shim, H-J Ahn, T-Y Seong, K.-W. Park, Y E Sung, Electrochemical and Solid-State Letters, 8, A277 (2005)


175. Resonance-tunneling-assisted emission enhancement in green light-emitting diodes with nanocraters formed in InGaN/GaN QW active layers, J H Song, G. H Song, J W. Lee, Y-W Ok, T-Y Seong, O Laboutin, P Deluca, H. K. Choi, Applied Physics Letters, 86, 132102 (2005)


174. Low-resistance Al-based reflectors for high-power GaN-based flip-chip light-emitting diodes, J-O Song, W-G Hong, J. S. Kwak, Y. Park, T-Y Seong, Applied Physics Letters, 86, 133503 (2005)


173. High electron concentration and mobility in Al-doped -ZnO epilayer achieved via dopant activation using rapid-thermal annealing, K,-K. Kim, S. Niki, J.Y.Oh, J.O.Song, T.Y.Seong, .S.-J. Park, S. Fujita, S.-W. Kim, Journal of Applied Physics, 97, 066103 (2005)


172. High transparency of Ag/Zn-Ni solid-solution ohmic contacts for GaN-based ultraviolet light-emitting diodes, D-S Leem, J-O Song, W-K Hong, J-T Maeng, J. S. Kwak, Y. Park T-Y Seong, Applied Physics Letters, 86, 102102 (2005)


171. Cu-doped indium oxide / Ag ohmic contacts for high-power flip-chip light-emitting diodes, J-O Song, J S Kwak, T-Y Seong, Applied Physics Letters, 86, 062103 (2005)


170. Ohmic and degradation mechanisms of Ag contacts on p-type GaN, J-O Song, J S Kwak, Y. Park, T-Y Seong, Applied Physics Letters, 86, 062104 (2005)


169. Effect of hydrogen peroxide treatment on the characteristics of Pt Schottky contact on n-type ZnO, S-H Kim, H-K Kim and T-Y Seong, Applied Physics Letters, 86, 102102 (2005)


168. Use of Sn-Si nanocomposite electrodes for Li rechargeable batteries, H-J Ahn, Y-S Kim, K-W Park, and T-Y Seong, Chemical Communications, 1, 43 (2005)


167. Improvement of the electrochemical properties of SnO2 electrodes for lithium rechargeable battery using protective Ta2O5 thin films, H-J Ahn, Y-S Kim, H-S Shim, C-Y Kim, T-Y Seong, Solid State Ionics, 176, 699 (2005)


166. Improvement of the luminous intensity of by using highly transparent Ag/ITO p-type ohmic contacts, J-O Song, D-S Leem, J S Kwak, Y. Park, S. W. Chae, T-Y Seong, IEEE Photonics Technology Letters, 17, 291 (2005)


165. Inductively coupled plasma reactive ion etching of ZrO2:H solid electrolyte film in BCl3-based plasmas, H-K Kim, J. W. Bae, I Adesida, T Kim, T-Y Seong, Y S Yoon, Journal of the Electrochemical Society, 152, A922 (2005)


164. Flip-chip light emitting diodes with low-resistance and reflective Ni/Rh and Ni/Au/Rh contacts, J-W Park, J-O Song, D-S Leem, T-Y Seong, Electrochemical and Solid-State Letters, 8, G17 (2005)


163. Optical properties of SiO2/nanocrystalline-Si multilayers studied using spectroscopic ellipsometry, K-J Lee, T-D Kang, H Lee, S H Hong, S-H Choi, T-Y Seong, K J Kim, and D W Moon, Thin Solid Films, 476, 196 (2005)


162. thermally stable and low resistance Re/Ti/Au ohmic contacts to n-ZnO, S-H Kim, K-K Kim, S-J Park and T-Y Seong, Journal of the Electrochemical Society, 152, G169 (2005)


161. Electrical characteristics of Pt Schottky contacts on sulfide-treated n-type ZnO, S-H Kim, H-K Kim, T-Y Seong, Applied Physics Letters, 86, 022101 (2005)


160. Characteristics of RuO2-SnO2 nanocrystallines embedded amorphous electrode for thin film micro-supercapacitors, H-K Kim, S-H Choi, Y S Yoon, S-Y Chang, Y-W Ok, and T-Y Seong, Thin Solid Films, 475, 54 (2005)


159. Formation of thermally stable low-resistance Ti/W/Au ohmic contacts on n-type GaN, V. R. Reddy, S.-H. Kim and T.-Y. Seong, Applied Physics A, 81, 561 (2005)


158. Low resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodes, J-R Lee, S-I Na, J-H Jeong, S-N Lee, J-S Jang, S-H Lee, J-J Jung, J-O Song, T-Y Seong, and S-J Park, Journal of the Electrochemical Society, 152, G92 (2005)


2004


157. Highly transparent Ag/SnO2 ohmic contact to p-type GaN for UVLEDs, J-O Song and T-Y Seong, Applied Physics Letters, 85, 6374 (2004)


156. Nitrogen surfactant effects in GaInP, D. C. Chapman, G. B. Stringfellow, A. Bell, F. A. Ponce, J. W. Lee, T. Y. Seong, S.-I. Shibakawa, and A. Sasaki, Journal of Applied Physics, 96, 7229 (2004)


155. Quantum confinement effect of Si nanocrystals in situ grown in silicon nitride films, T-Y Kim, N-M Park, K-H Kim, G Y Sung, Y-W Ok, T-Y Seong, C-J Choi, Applied Physics Letters, 85, 5355 (2004)


154. Flip-chip light emitting diodes with low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts, D-S Leem, J-O Song, J. S. Kwak, J. Cho, H. Kim, O. H. Nam, Y. Park, and T-Y Seong, Physica Status Solidi (A), 201, 2823 (2004)


153. Nanodot addition effect on the electrical properties of Ni contacts to p-type GaN, J I Sohn, J-O Song, D-S Leem, S Lee, and T-Y Seong, Physica Status Solidi (C), 1(10), 2524 (2004)


152. Low resistance and reflective MIO/Ag ohmic contacts for flip-chip light emitting diodes, J O Song, D-S Leem, J S Kwak, O H Nam, Y Park, and T-Y Seong, IEEE Photonics Technology Letters, 16, 1450 (2004)


151. the use of nitrogen to disorder GaInP, D. C. Chapman, L. W. Rieth, and G. B. Stringfellow, J. W. Lee and T. Y. Seong, Journal of Applied Physics, 95, 6145 (2004)


150. Formation of thermally stable Ni monosilicide using an inductively coupled plasma process, Y-W Ok, C-J Choi, J-T Maeng, T-Y Seong, Journal of Electronic Materials, 33, 916 (2004)


149. Low resistance and transparent ohmic contacts to p-type GaN using Zn-Ni solid solution/Au scheme, J-O Song, D-S Leem, T-Y Seong, Applied Physics Letters, 84, 4663 (2004)


148. High quality Cu-Ni solid solution/Ag ohmic contacts for flip-chip LEDs, D-S Leem, J O Song, J S Kwak, O H Nam, Y Park, and T-Y Seong, Electrochemical and Solid-State Letters, 7, G210 (2004)


147. High Low resistance and highly reflective Sb-doped SnO2/Ag ohmic contacts to p-type GaN for flip-chip light emitting diodes, D-S Leem, J-O Song, and H-G Hong J. S. Kwak, Y. Park, T-Y Seong, Electrochemical and Solid-State Letters, 7, G219 (2004)


146. Formation of non-alloyed low resistance Ni/Au contacts to p-GaN using Au nano-dots, J I Sohn, J-O Song, D-S Leem, S Lee, and T-Y Seong, Electrochemical and Solid-State Letters, 7, G179 (2004)


145. GaN-based light-emitting diodes with Ni-Mg solid solution/Au p-type ohmic contact, J-O Song, D-S Leem, S-H Kim, J S Kwak, and T-Y Seong, Solid-State Electronics, 48, 1597 (2004)


144. Electrical properties of thermally stable Pt/Re/Au ohmic contacts to p-type GaN, V. R Reddy, S-H Kim, J-O Song and T-Y Seong, Solid-State Electronics, 48, 1563 (2004)


143. Interfacial reaction effect on the ohmic properties of a Pt/Pd/Au contact on p-type GaN, H-K Kim, I. Adesida, and T-Y Seong, Journal of Vacuum Science & Technology A, 22, 1101 (2004)


142. Fabrication of ZnO QDs embedded in an amorphous oxide layer, K-K Kim, N. Koguchi, Y-W Ok, T-Y Seong, and S-J Park, Applied Physics Letters, 84, 3810 (2004)


141. Improvement of the thermal stability of Ni-silicided SiGe layers by using a Mo interlayer, Y-W Ok, S-H Kim, Y-J Song, K-H Shim, and T-Y Seong, Journal of Vacuum Science & Technology B, 22, 1088 (2004)


140. Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN, H-K Kim, T-Y Seong, I Adesida, C W Tang, and K M Lau, Applied Physics Letters, 84, 1710 (2004)


139. Novel Nickel-silicidation process using hydrogen implantation, C-J Choi, S-A Song, Y-W Ok, and T-Y Seong, Electronics Letters, 40, 391 (2004)


138. Low resistance Ni-Zn solid solution/Pd Ohmic contacts to p-type GaN, J-O Song, D-S Leem, and T-Y Seong, Semiconductor Science and Technology, 19, 669 (2004)


137. Low resistance and transparent Ni-La solid solution/Au ohmic contacts to p-type GaN, J-O Song, D-S Leem, J S Kwak, S. N. Lee, O. H. Nam, Y. Park and T-Y Seong, Applied Physics Letters, 84, 1504 (2004)


136. Epitaxial ZnO growth and p-type doping with MOMBE, I. Suemune, ABM. Almamun Ashrafi, M. Ebihara, M. Kurimoto, H. Kumano, T.-Y. Seong, B.-J. Kim, and Y.-W. Ok, Physica Status Solidi (B), 241, 640 (2004)


135. Effects of Br and Cl on OMVPE growth and ordering in GaInP, A. D. Howard, L. Rieth, D. C. Chapman, R. R. Wixom, G. B Stringfellow, B.-J. Kim, and T.-Y. Seong, Journal of Applied Physics, 95, 2319 (2004)


134. Electrical and structural properties of Ti/W/Au ohmic contacts on n-type GaN, V. R. Reddy and T.-Y. Seong, Semiconductor Science and Technology, 19, 975 (2004)


133. Electrical and structural properties of low resistance Ti/Al/Re/Au ohmic contacts to n-type GaN, V R Reddy, S-H Kim, T-Y Seong, Journal of Electronic Materials, 33, 395 (2004)


132. Study of the electrical and structural characteristics of Al/Pt ohmic contact on n-ZnO epitaxil layer, H-K Kim, I Adesida, K-K Kim, S-J Park, and T-Y Seong, Journal of the Electrochemical Society, 151, G223 (2004)


131. Low resistance and transparent Ni-Mg solid solution/Pt Ohmic contacts to p-GaN, D-S Leem, J-O Song, S-H Kim, and T-Y Seong, Electrochemical and Solid-State Letters, 7, G65 (2004)


130. Mechanism of nonalloyed Al ohmic contacts to n-type ZnO:Al epitaxial layer, H-K Kim, T-Y Seong, K-K Kim, S-J Park, Y S Yoon, and I. Adesida, Japanese Journal of Applied Physics, 43, 976 (2004)


129. Characteristics of rapid-thermal-annealed LiNiCoO cathode films for all- solid-state rechargeable thin film microbatteries, H-K Kim, T-Y Seong, and Y S Yoon, Thin Solid Films, 447-448, 619 (2004)


128. High rate inductively-coupled-plasma etching of ZnO in BCl3 plasma and effect of BCl3 Plasma treatment on Ti/Au ohmic contacts for ZnO, H-K Kim, J W Bae, K-K Kim, S-J Park, T-Y seong, and I Adesida, Thin Solid Films, 447-448, 90 (2004)


127. Structural properties of nickel silicided SiGe (001) layers, Y-W Ok, S-H Kim, Y-J Song, K-H Shim, T-Y Seong, Semiconductor Science and Technology, 19, 285 (2004)


2003


126. Low resistance and highly reflective Zn-Ni solid solution/Ag ohmic contacts for flip-chip light emitting diodes, J-O Song, D-S Leem, J. S. Kwak, O. H. Nam, Y. Park, and T-Y Seong, Applied Physics Letters, 83, 4990 (2003)


125. Formation of low resistance and transparent Ohmic contacts to p-GaN using Ni-Mg solid solutions, J-O Song, D-S Leem, and T-Y Seong, Applied Physics Letters, 83, 3513 (2003)


124. Growth of crack-free high-qaulity GaN on Si(111) using a low temp AlN interlayer; Observation of tilted domain structures in the AlN interlayer, M. H. Kim, Y. G. Do, H. C. Kang, C. J. Choi, D. Y. Noh, T. Y. Seong, S. J. Park, Physica Status Solidi (C), 2150 (2003)


123. GaNAs as Strain Compensating Layer for 1.55μm Light Emission from InAs Quantum Dots, S Ganapathy, X Q Zhabg, I. Suemune, K Uesugi, H. Kumano, B. J. Kim, T-Y Seong, Japanese Journal of Applied Physics, 42, 5598 (2003)


122. High-quality nonalloyed Rh-based ohmic contacts to p-GaN, J. O Song, D.-S. Leem, J. S. Kwak, O. H. Nam, Y. Park, T.-Y. Seong, Applied Physics Letters, 83, 2372 (2003)


121. Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer, H-K Kim, K-K Kim, S-J Park, T-Y Seong, I Adesida, Journal of Applied Physics, 94, 4225 (2003)


120. Formation of nickel disilicide using Ni implantation and rapid thermal annealing, C-J Choi, S-Y Chang, Y-W Ok, T-Y Seong, H Gan. G. Z. Pan, and K N Tu, Journal of Electronic Materials, 32, 1 (2003)


119. Formation of V-based Ohmic contacts to n-GaN, J O Song, S-H Kim, J S Kwak, and T-Y Seong, Applied Physics Letters, 83, 1154 (2003)


118. Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN, J O Song, K-K Kim, S-J Park, and T-Y Seong, Applied Physics Letters, 83, 479 (2003)


117. Inductively coupled plasma reactive ion etching of ZnO using BCl3-based plasmas, H-K Kim, J.-W. Bae, I. Adesida, K.-K. Kim and T.-Y. Seong, Journal of Vacuum Science & Technology B, 21, 1273 (2003)


116. Effect of Mo interlayer in the formation of nickel silicide, Y-W Ok, C-J Choi and T-Y Seong, Journal of the Electrochemical Society, 150, G385 (2003)


115. III-V-N-related quantum structures for 1.5mm emission, I. Suemune, K. Uesugi, S. Ganapathy, X. Zhang, M. Kurimoto, B.J. Kim, T.Y. Seong, H. Machid and N. Shimoyam, IEE Proceedings - Optoelectronics, 150, 52 (2003)


114. High rate dry etching of ZnO using BCl3/CH4/H2 plasma, J W Bae, C-H Jeong, H-K Kim, T-Y Seong, K-K Kim, S-J Park, I. Adesida, and G Y Yoem, Japanese Journal of Applied Physics, 42, 535 (2003)


113. Low-resistance and thermally stable Pd/Re ohmic contacts to p-type GaN, V. R Reddy, S-H Kim, J-O Song and T-Y Seong, Semiconductor Science and Technology, 18, 541 (2003)


112. All solid-state rechargeable thin film micro-supercapacitor fabricated by tungsten co-sputtered ruthenium oxide electrodes, H-K Kim, S-H Cho, T-Y Seong, and Y S Yoon, Journal of Vacuum Science & Technology B, 21, 949 (2003)


111. Structural properties of CdO layers grown on (001) GaAs substrates by MOMBE, B-J Kim, Y-W Ok, T-Y Seong, A. B. M. Ashrafi, H Kumano, I. Suemune, Journal of Crystal Growth, 252/1-3, 219 (2003)


110. Structural study of amorphous vanadium oxide films for thin film microbattery, H-K Kim, T-Y Seong and Y S Yoon, Journal of Vacuum Science & Technology B, 21, 754 (2003)


2002


109. A Study of Stress-Induced p+/n Silicided Junction Leakage Fail and Optimized Process Conditions for sub-0.15 mm CMOS Technology, J. H. Lee, H. D. Lee, K. M. Lee, C. J. Choi, and T. Y. Seong, IEEE Transactions on Electron Devices, 49, 1985 (2002)


108. Effects of surface treatment on the electrical properties of Ohmic contacts to (In)GaN for high performance optical devices, J-S Jang, S-J Park, and T-Y Seong, Physica Status Solidi (A), 194, 576 (2002)


107. Fabrication of all solid-state thin film battery using a rapid-thermal-annealed LiNiO2 cathode, H-K Kim, T-Y Seong, and Y-S Yoon, Electrochemical and Solid-State Letters, 5, A252 (2002)


106. Effect of Pt co-sputtering on characteristics of amorphous vanadium oxide films, H-K Kim, T-Y Seong, and Y S Yoon, Journal of Power Sources, 112, 67 (2002)


105. Correlation between the microstructures and cycling performance of RuO2 electrodes for TFSCs, H-K Kim, T-Y Seong, J H Lim, W I Cho and Y S Yoon, Journal of Vacuum Science & Technology B, 20, 1827 (2002)


104. Heteroepitaxial growth behavior of SrRuO3/SrTiO3(001) by pulsed laser deposition, S. S. Kim, T.-Y. Seong, H. S. Kim, and J. H. Je, Journal of Applied Physics, 92, 4820 (2002)


103. Low resistance and thermally stable Pd/Ru contacts to p-type GaN, J-S Jang, S-J Park, T-Y Seong, I.T. Ferguson, Journal of Electronic Materials, 31, 903 (2002)


102. Effect of Fe film thickness and pretreatments on the growth behaviors of carbon nanotubes on Fe-doped Si substrates, J I Sohn, C-J Choi, S. Lee, T-Y Seong, Japanese Journal of Applied Physics, 41, 4731 (2002)


101. Effects of hydrogen implantation on the structural and electrical properties of nickel silicide, C-J Choi, Y-W Ok, S S Hullavarad, T-Y Seong, K-M Lee, J-H Lee, and Y-J Park, Journal of the Electrochemical Society, 149, G517 (2002)


100. thermally stable and low resistance Ru ohmic contacts to n-ZnO, H-K Kim, K-K Kim, S-J Park, T-Y Seong, Japanese Journal of Applied Physics, 41, L546 (2002)


99. Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH3CSNH2 solution, J O Song, S-J Park, and T-Y Seong, Applied Physics Letters, 80, 3128 (2002)


98. Growth and structural characterization of III-N-V semiconductor alloys, I Suemune, K Uesugi, and T-Y Seong, Semiconductor Science and Technology, 17, 755 (2002)


97. N+/P junction leakage characteristics of Co salicide process for 0.15 μm CMOS devices, K-M Lee, C-J Choi, J-H Lee, T-Y Seong, Y-J Park, S-K Hong, J-G Ahn, H-D Lee, IEEE Transactions on Electron Devices, 49, 937 (2002)


96. CdO epitaxial layers grown on (001) GaAs by MOMBE, A Ashrafi, H Kumano, I Suemune, Y W Ok, T-Y Seong, Journal of Crystal Growth, 237-239, 518 (2002)


95. Abnormal junction profile of silicided p+/n shallow junctions: A leakage mechanism, C-J Choi, T-Y Seong, K-M Lee, J-H Lee, Y-J Park, H-D Lee, IEEE Electron Device Letters, 23, 188 (2002)


94. Rapid thermal annealing effect on the surface of LiNi1-xCoxO2 cathode film for thin film micro battery, H-K Kim, T-Y Seong, W I Cho, and Y S Yoon, Journal of Power Sources, 4743, 5 (2002)


93. Effect of a SiO2 capping layer on the electrical properties and morphology of nickel silicides, C-J Choi, Y-W Ok, T-Y Seong, H-D Lee, Japanese Journal of Applied Physics, 41, 1969 (2002)


92. Reduction of threading dislocation in InGaN/GaN DH through the introduction of low temperature GaN intermediate layer, D-H Yoon, K-S Lee, J-B Yoo, T-Y Seong, Japanese Journal of Applied Physics, 41, 1253 (2002)


91. Effects of annealing on the microstructures and mechanical properties of TiN/AlN multilayer films prepared by IBA deposition, D-G Kim, and T-Y Seong, Y-J baik, Surface and Coatings Technology, 153, 79 (2002)


90. Time dependent surfactant effects on growth of GaInP heterostructures by organometallic vapor phase epitaxy, J. K. Shurtleff, R. T. Lee, C. M. Fetzer, G. B. Stringfellow, S. Lee and T. Y. Seong, Journal of Crystal Growth, 234, 327 (2002)


2001


89. Enhancement of composion modulation in GaInP epilayers by the addition of surfactants during OMVPE growth, R T Lee, C M Fetzer, S W Jun, D C Chapman, J K Shurtleff, G B Stringfellow, Y W Ok and T-Y Seong, Journal of Crystal Growth, 233, 490 (2001)


88. Occurrence of CuPt-A and CuPt-B ordering in GaInP layers grown by SSMBE, J D Song, Y-W Ok, J M Kim, Y T Lee and T-Y Seong, Applied Surface Science, 183/1-2, 33 (2001)


87. Elctrochemical and structural properties of radio frequency sputtered cobalt oxide electrode for thin film supercapacitor, H-K Kim, T-Y Seong, J-H Lim, W I Cho, and Y S Yoon, Journal of Power Sources, 102, 167 (2001)


86. Oxidation behaviour of TiN/AlN multilayer films prepared by the ion-beam assisted deposition, D-G Kim, T-Y Seong, and Y-J Baik, Thin Solid Films, 397, 203 (2001)


85. Lateral compositon modulation in the GaP/InP SPSs grown by SSMBE, J D Song, Y-W Ok, J M Kim, Y T Lee, T-Y Seong, Journal of Applied Physics, 90, 5086 (2001)


84. Microstructures and electrochemical properties of Pt-doped amorphous V2O5 cathode films for thin film micro-batteries, H-K Kim, E-J Jeon, Y-W Ok, T-Y Seong, W I Cho, and Y S Yoon, Journal of Vacuum Science & Technology A, 19, 2549 (2001)


83. Abnormal junction profile of submicron CMOS devices with Co silicidation and shallow trench isolation processes, C-J Choi, T-Y Seong, K-M Lee, J-H Lee, Y-J Park, and H-D Lee, Electrochemical and Solid-State Letters, 4, 88 (2001)


82. Single-crystallin rocksalt CdO layers grown on GaAs(001) by MOMBE, A B Almamun Ashrafi, H Kumano, A Ueta, I Suemune, Y-W Ok and T-Y Seong, Applied Physics Letters, 79, 470 (2001)


81. Structural properties of GaNAs layers grwon by MOMBE, Y-W Ok, C-J Choi, T-Y Seong, I.Suemune, N.Morooka, K.Uesugi, Journal of Electronic Materials, 30, 900 (2001)


80. Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2, S.Jeon, C-J Choi, T-Y Seong, H Hwang, Applied Physics Letters, 79, 245 (2001)


79. Effect of thermal and hydrogen treatment on In segregation in InGaN/GaN MQWs, Y.T.Moon, D.J.Kim, K.M.Song, C.J.Choi, S.H.Han, T.-Y.Seong, S.-J.Park, Journal of Applied Physics, 89, 6514 (2001)


78. Growth behavior of carbon nanotubes grown on Fe-deposited (011) Si substrates, J-I Shon, C-J Choi, S.Lee, and T-Y Seong, Applied Physics Letters, 78, 3130 (2001)


77. Growth of high-quality GaN on Si(111) substrate by UVCVD, M.H.Kim, Y.C.Bang, N.M.Park, C.j.Choi, T.-Y.Seong, S.-J.Park, Applied Physics Letters, 78, 2858 (2001)


76. Electrical and structural properties of Ti/Au ohmic contacts to n-ZnO by H-K Kim, S-H Han, T-Y Seong, and W-K Choi, Journal of the Electrochemical Society, 248, G114 (2001)


75. thermally stable Nb and Nb/Au ohmic contacts to p-GaN, H.-K.Kim, T.-Y.Seong, and C-R Lee, Journal of Electronic Materials, 30, 266 (2001)


74. Sb enhancement of lateral superlattice formation in GaInP, C.M. Fetzer, R.T. Lee, S.W. Jun, G.G. Stringfellow, S.M. Lee, T-Y Seong, Applied Physics Letters, 78, 1376 (2001)


73. Quantum confinement and blue light emission in amorphous silicon quantum dots embedded in silicon nitrides, N.M. Park, C.J. Choi, T.-Y. Seong, S.-J. Park, Physical Review Letters, 86(7), 1355 (2001)


72. Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN, J-S Jang, D-J Kim, S-J Park, and T-Y Seong, Journal of Electronic Materials, 30, 94 (2001)


2000


71. Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by MOMBE, I. Suemune, N. Morooka, K. Uesugi, Y-W Ok and T-Y Seong, Journal of Crystal Growth, 221, 546 (2000)


70. Structural and optical properties of InGaN/GaN MQWs: the effect of the number of InGaN/GaN pairs, D. J. Kim, Y. T. Moon, K. M. Song, C. J. Choi, Y. W. Ok, T. Y. Seong, S. J. Park, Journal of Crystal Growth, 221, 368 (2000)


69. Relationship between the lateral length and thickness of the platelets in naturally occurring SLS structures, I.T. Ferguson, A.G. Norman, T-Y Seong, Journal of Applied Physics, 88, 5733 (2000)


68. Ultrahigh-transparency of Ni/Au ohmic contacts to surface-treated p-GaN, J-S Jang, S-J Park, T-Y Seong, Journal of Applied Physics, 88, 5490 (2000)


67. Bi surfactant control ofordering and surface structure in GaInP grown by OMVPE, S. W. Jun, R. T. Lee, C. M. Fetzer, J. K. Shurtleff, G. B. Stringfellow, C. J. Choi and T.-Y. Seong, Journal of Applied Physics, 88, 4429 (2000)


66. Low-resistance Ti/Au ohmic contacts to n-type ZnO, H-K Kim, S.H. Han, T-Y Seong, and W. K. Choi, Applied Physics Letters, 77, 1647 (2000)


65. Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated p-GaN, J.-S. Jang and T-Y Seong, Journal of Applied Physics, 88, 3064 (2000)


64. Characterization of sub-30 nm p+/n junction formed by plasma ion implantation, S.K. Baek, C. J. Choi, T.-Y. Seong, H. Hwang, H. K. Kim and D. W. Moon, Journal of the Electrochemical Society, 147, 3091 (2000)


63. Ultrashallow p+/n Junction Formation by Plasma Ion Implantation, S.K.Baek, C.J.Choi, T.-Y.Seong, H.Hwang, D.W.Moon, and H.K.Kim, Journal of the Korean Physical Society, 37, 912 (2000)


62. Low resistance and thermally stable Pt/Ru ohmic contacts to p-type GaN, J-S Jang, S-J Park, and T-Y Seong, Physica Status Solidi (A), 180, 103 (2000)


61. Electronic transport mechanisms of Pt contact to p-GaN, J-S Jang and T-Y Seong, Applied Physics Letters, 76, 2742 (2000)


60. Metallisation scheme for highly low-resistance, transparent, and thermally-stable ohmic contacts to p-GaN, J-S Jang, S-J Park, and T-Y Seong, Applied Physics Letters, 76, 2898 (2000)


59. Heterostructures in GaInP grown using a change in Te doping, Y. Hsu, C.M. Fetzer, G.B. Stringfellow, J.K. Shurtleff, C.J. Choi, and T.-Y. Seong, Journal of Applied Physics, 87, 7776 (2000)


58. Surfactant controlled growth of GaInP by OMVPE, R-T Lee, K.Shurtleff, C.M Fetzer, G.B Stringfellow, S.Lee, T-Y Seong, Journal of Applied Physics, 87, 3730 (2000)


57. Isoelectronic dopant induced ordering transition in GaInP grown by organometallic vapour phase epitaxy, T-Y Seong, S-M Lee, R-T Lee, and G.B. Stringfellow, Surface Science Letters, 457, L381 (2000)


56. Electrical and structural properties of W ohmic contacts to InGaN, H.-K. Kim, J.-S. Jang, S.-J. Park and T.-Y. Seong, Journal of the Electrochemical Society, 147, 1573 (2000)


55. Effects of Si doping on ordering and domain structures in GaInP, S-M Lee, T-Y Seong, R-T Lee, and G.B. Stringfellow, Applied Surface Science, 158/3-4, 223 (2000)


54. High quality nonalloyed Pt ohmic contacts to p-type GaN using two-step surface treatment, J-S Jang, S-J Park, and T-Y Seong, MRS Internet Journal of Nitride Semiconductor Research, 5S1, W10.4 (2000)


53. Investigation of the role of low temperature GaN in p-GaN/InGaN/n-GaN DH LEDs, D-H Youn, S-J Son, Y-J Lee, S-W Hwang, J-J Yang, K-J Lee, J-H Kim, J-Y Jo, J-B Yoo, C-J Choi, T-Y Seong, Japanese Journal of Applied Physics, 39, 2512 (2000)


52. TEM study of 2-D dopant profiling in MOSFET test structures and devices, C-J Choi and T-Y Seong, Journal of the Electrochemical Society, 147, 1525 (2000)


51. the use of surfactant (Sb) to induce triple period ordering in GaInP, C.M. Fetzer, R-T Lee, K. Shurtleff, G.B. Stringfellow, S. Lee, and T.-Y. Seong, Applied Physics Letters, 76, 1440 (2000)


50. Effects of Te doping on ordering and APBs in GaInP, C-J Choi, R. Spirydon, T-Y Seong, S.H. Lee, and G.B. Stringfellow, Japanese Journal of Applied Physics, 39, 402 (2000)


49. Growth and characterization of hypothetical zincblende ZnO films on GaAs(001) substrates with ZnS buffer layers, A A Almamun, A Ueta, A Avramescu, H Kumano, I Suemune, Y-W Ok, and T-Y Seong, Applied Physics Letters, 76, 556 (2000)


48. Surfactant effects of dopants on ordering in GaInP, R-T Lee, C.Y. Fetzer, K. Shurtleff, Y. Hsu, G.B. Stringfellow, S.-M. Lee, and T-Y. Seong, Journal of Electronic Materials, 29, 134 (2000)


~1999


47. Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment, J-S Jang, S-J Park, and T-Y Seong, Journal of Vacuum Science & Technology B, 17, 2580 (1999)


46. Optical and structural studies of phase separation in InGaN films grown by MOCVD, Y.-T. Moon, D.-J. Kim, K.-M. Song, I.-H. Lee, M.-S. Yi, D.-Y. Noh, C.-J. Choi, T-Y Seong and S-J Park. Physica Status Solidi (B), 216, 167 (1999)


45. Interfacial reaction of Ni/Pt/Au contact scheme to p-type GaN, J-S Jang, S-J Park, and T-Y Seong, Journal of the Electrochemical Society, 146, 3425 (1999)


44. Step structure and ordering in Zn-doped GaInP, S.H. Lee, C.M. Fetzer, G.B. Stringfellow, C.J. Choi,and T-Y Seong, Journal of Applied Physics, 86, 1982 (1999)


43. TEM structural study of Y2O3 films grown on Si (111) by ICB, D.H. Lee, T-Y Seong, M.H. Cho and C.N. Whang, Journal of the Electrochemical Society, 146, 3028 (1999)


42.Structural study of GaN grown on (001) GaAs by OMVPE, I-T Bae, T-Y Seong, Y.J. Park, and E.K.Kim, Journal of Electronic Materials, 28, 873 (1999)


41.Growth of cubic GaN by phosphororus-mediated molecular beam epitaxy, Y.Zhao, C. W.Tu, I-T.Bae,and T-Y.Seong, Applied Physics Letters, 74, 3182 (1999)


40. Te doping of GaInP: Ordering and step structure, S.H.Lee, C.Y.Fetzer, G.B. Stringfellow, D.H. Lee, and T-Y seong, Journal of Applied Physics, 85, 3590 (1999)


39. Structural study of GaN(As,P) layers grown on (0001) GaN by GSMBE,T-Y Seong, I-T Bae, Y. Zhao, and C. Tu, MRS Internet Journal of Nitride Semiconductor Research, 4S1, G3.11. (1999)


38. Low resistance Pt/Ni/Au ohmic contacts to p-type GaN, J-S Jang, I-S Chang, H-K Kim, T-Y Seong, S.H. Lee and S-J Park, Applied Physics Letters, 74, 70 (1999)


37. Microstructures of Ga(N,P) layers grown by gas source Mbe,T-Y Seong, I-T Bae, C.-J. Choi, D.Y. Noh, Y. Zhao, and C. Tu, J. Appl.Phys., 85, 3135 (1999)


36. CL of diamond films grown on pretreated Si(001) substrates by MPCVD, D-G Kim, T-Y Seong, Y-J Baik, M.A. Stevens Kalceff, and M.R. Phillips, Diamond and Related Materials, (1998)


35. Ordering and microstructures of GaNAs layers grown on (0001) GaN substrates by GSMBE, T-Y Seong, I-T Bae, Y. Zhao and C.W.Tu, Electrochemical and Solid-State Letters, 2, 94 (1999)


34. Quantum wells due to ordering in GaInP, Y. Hsu, C.E. Inglefield, J.H. Cho G.B. Stringfellow, M.C. Delong, P.C. Taylor and T-Y. Seong, Applied Physics Letters, 73, 3905 (1998)


33. Diffuse diffracted features and ordered domain structures in GaInP layers grown by OMVPE, J.J. Yang, R Spirydon, T-Y. Seong, S.H. Lee and G.B. Stringfellow, Journal of Electronic Materials, 1117 (1998)


32. Tetragonal distortion and domain structure of thin Pb(Zr,Ti)O3 films grown on (001) MgO, D.Y. Noh, H.C. Kang, T-Y. Seong, J.H. Je, and H.K. Kim, Applied Physics A, 66, 343 (1998)


31. Structural investigation of the bias-enhanced nucleation and growth of diamond films by MPCVD, D-G. Kim, T-Y. Seong and Y.-J. Baik, Journal of the Electrochemical Society, 145, 2095 (1998)


30. Morphology and Defect Structure of GaSb Islands on GaAs Grown by MOVPE, J.H. Kim, T-Y. Seong, N.J. Mason, and P.J. Walker, Journal of Electronic Materials, 27, 466 (1998)


29. Structural and optical properties of GaxIn1-xP layers grown by CBE, T-Y. Seong, J.J. Yang, J-I. Song, M.I. Yu and P.W. Yu, Journal of Electronic Materials, 27, 409 (1998)


28. Surface photoabsorption transients and ordering in GaInP, T.C. Hsu, G.B. Stringfellow, J.H. Kim, and T-Y. Seong, Journal of Applied Physics, 83, 3350 (1998)


27. Origin of dislocation-related photoluminescence bands in very thin SiGe layers grown on Si substrates, H. Lee, S.H. Choi, and T-Y. Seong, Applied Physics Letters, 71, 3823 (1997)


26. Characterisation of unicompositional GaInP2 ordering heterostructures grown by variation of V/III ratio, C. E. Inglefield,M. C. DeLong, P. C. Taylor, Y. S. Chun, I. H. Ho, G. B. Stringfellow, J. H.Kim, and T. Y. Seong, Journal of Applied Physics, 82, 5107 (1997)


25. Effects of implanted materials on impurity-induced layer disordering in strained GaInAs/GaInAsP/GaInP/GaAs QW structures, D.J. Jang, J.K. Lee, K.H. Park, H.S. Cho, T-Y. Seong, C-S. Park, and K.E. Pyun, Japanese Journal of Applied Physics, 36, L1364 (1997)


24. Growth of order/disorder heterostructures in GaInP using a variation in the V/III ratio, Y.S. Chun, Y.Hsu, I.H. Ho,T.C. Hsu, H. Murata, G.B. Stringfellow, J.H. Kim, and T-Y. Seong, Journal of Electronic Materials,26, 1250 (1997)


23. Structural dependence of mechanical properties of Si incorporated diamond-like carbon films deposited by RF plasma-assisted chemical vapour deposition, K-R. Lee, M-G. Kim, S-J. Cho, K.Y. Eun, and T-Y. Seong, Thin Solid Films, 308-309, 263 (1997)


22. Microstructural studies of BEN and growth of diamond on Si substrates, T-Y. Seong, D.-G. Kim, K-K. Choi, Y.-J. Baik, Applied Physics Letters, 70, 3875 (1997)


21. Heterostructures in GaInP grown using a change in V/III ratio, Y.C. Chun, H. Murata, S.H. Lee, I.H. Ho, T.C.Hsu, G.B. Stringfellow, C.E. Inglefield, M.C. Delong, P.C. Taylor, J.H. Kim,and T-Y. Seong, Journal of Applied Physics, 81, 7778 (1997)


20. Effects of V/III ratio on ordering and antiphase boundaries in GaInP layers, T-Y. Seong, J-H. Kim, Y.S. Chun, and G.B. Stringfellow, Applied Physics Letters, 70, 3137 (1997)


19. Formation of InAs quantum dots on (100) GaAs by CBE, S-J Park, H.T. Lee, J.S. Oh, J.H. Kim, T-Y. Seong, S-B. Kim, J-R. Ro, and E-H. Lee, Journal of the Korean Physical Society, 31, S537 (1997)


18. Atomic ordering and phase separation in MBE InAsSb layers, J.H. Kim, T-Y. Seong and G.R. Booker, Journal of the Korean Physical Society, 30, S81 (1997)


17. Direct formation of nano-crystalline silicon by electron cyclotron resonance chemical vapour deposition, W.C. Choi, E.K. Kim, S-K. Min, C-Y. Park, J.H. Kim, and T-Y. Seong, Applied Physics Letters, 70, 3014 (1997)


16. Ordering and associated domain structures in Zn and Si doped GaInP and GaInAsP layers grown by MOVPE, T-Y. Seong, D.G. Kim, D.J. Jang, and J.H. Lee, Japanese Journal of Applied Physics, 35, 5607 (1996)


15. Naturally formed InAlAs vertical superlattices, S.W. Jun, T-Y. Seong, J.H. Lee and B. Lee, Applied Physics Letters, 68, 3447 (1996)


14. Studies of porous silicon emitters, E. Boswell, T-Y. Seong, and P.R. Wilshaw, Journal of Vacuum Science & Technology B, 13, 437 (1995)


13. Growth of InAs/GaSb strained layer superlattices. II, G.R. Booker, P.C. Klipstein, M. Lakrimi, S. Lyapin, N.J. Mason, I.J. Murgatroyd, R.J. Nicholas, T-Y. Seong, D. Symons, P.J. Walker, Journal of Crystal Growth, 146, 495 (1995)


12. Growth of InAs/GaSb strained layer superlattices.I, G.R. Booker, P.C. Klipstein, M. Lakrimi, S. Lyapin, N.J. Mason,R.J. Nicholas, T-Y. Seong, D. Symons, T.A. Vaughan, P.J. Walker, Journal of Crystal Growth, 145, 778 (1994)


11. Mechanisms for CuPt-type ordering in mixed III-V epitaxial layers, B.A. Philips, A.G. Norman, T-Y. Seong, S. Mahajan,G.R. Booker, M. Skowronski, J.P. Harbison,V.G. Keramidas, Journal of Crystal Growth, 140, 249 (1994)


10. Atomic ordering in MBE InAsySb1-ystrained layer superlattices and homogenous layers, T-Y. Seong, G.R. Booker, A.G.Norman, I.T. Ferguson, Applied Physics Letters, 64, 3593 (1994)


9. Atomic ordering and domain structures in MOCVD InGaAs (001) layers, T-Y. Seong, A.G. Norman, G.R. Booker, A.G. Cullis, Journal of Applied Physics, 75, 7852 (1994)


8. Optical and transport properties of piezoelectric [111] oriented strained GaInSb/GaSb quantum wells, S.L. Wong, R.W.Martin, M. Lakrimi, R.J. Nicholas, T-Y. Seong, N.J. Mason and P.J. Walker, Physical Review B, 48, 17885 (1993)


7. Improved materials for MOVPE growth of GaSb and InSb, R. Graham, A.C. Jones, N.J. Mason, S.A. Rushworth, A. Salasse,T-Y. Seong, G.R. Booker, L.M. Smith, P.J. Walker, Semiconductor Science and Technology, 8, 1797 (1993)


6. Geometry and interface structure of island nuclei for GaSb buffer layers grown on (001) GaAs by MOVPE, M. Aindow, T-T. Cherng, N.J. Mason, T-Y. Seong, P.J. Walker, Journal of Crystal Growth, 133, 168 (1993)


5. TEM and TED structural studies of heteroepitaxial InAsySb1-y MBE layers, T-Y. Seong, A.G. Norman, I.T. Ferguson, G.R. Booker, Journal of Applied Physics, 73, 8227 (1993)


4. Structural studies of natural superlattices in Group III-V alloy epitaxial layers, A.G. Norman, T-Y. Seong, I.T. Ferguson,G.R. Booker, B.A. Joyce, Semiconductor Science and Technology, 8, S9 (1993)


3. Investigations on the influence of masks on the nature of selective area epitaxy, J. Thompson, A.K. Wood, N. Carr, P.M. Charles, A.J. Moseley, R. Pritchard, B. Hamilton, A. Chew, D.E. Skyes, T-Y. Seong, Journal of Crystal Growth, 124, 227 (1992)


2. MBE growth of InAsSb strained layer superlattices. Can nature do it better ? I.T. Ferguson, T-Y. Seong, R.H.Thomas, A.G. Norman, C.C. Phillips, R.A. Stradling, G.R. Booker, B.A. Joyce, Applied Physics Letters, 59, 3324 (1991)


1. Effects of heat treatment on precipitation behaviour in Cu-Ni-Si-P alloys, Y.G. Kim, T-Y. Seong, J.H. Han, A.J. Ardell, Journal of Materials Science, 21, 1357 (1986)