International Patents


    131. Vertical light-emitting diode device and method of fabricating the same (수직의 발광 다이오드 소자 과 이를 제조하는 방법), U.S.A., Ki-Seok Kim, Sung-Ju Song, Tae-Yeon Seong, 10403791


    130. Lateral Light Emitting Diode Device and Method for Facbricating The Same, U.S.A., Ki-Seok Kim, sung-Ju Song, Dae-Hyun Kim, Tae-yeon Seong, 10333026


    129. Light-emitting diode with transparent conductive electrodes for improvement in light extraction efficiency (광 제거 효율에 있는 향상을 위한 투명한 전도성 전극을 가진 발광 다이오드), U.S.A., Dae-Hyun Kim, Byung-Joon Choi, Tae-yeon Seong, 10263157


    128. Method for fabricating high-efficiency light emitting diode having light emitting window electrode structure (윈도우 전극 구조를 방출하는 효율이 높은 발광 다이오드 갖는 광을 제조하기 위한 방법), U.S.A., Ki-Seok Kim, Hwan-Gyo Kim, Dae-Hyun Kim, Tae-yeon Seong, 10181550


    127. Light-emitting diode with multiple N contact structure (다중 N 접촉 구조를 가진 발광 다이오드), U.S.A., Ki-Seok Kim, Jun-Young Jin, Tae-yeon Seong, 10177279


    126. SUPPORTING SUBSTRATE FOR FABRICATION OF SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME, E.P.O., Tae-yeon Seong, 2302705


    125. Light emitting device having an roughened surface ,E.P.O. , Kwang Ki Choi, Hwan Hee Jeong, Ji Hyung Moon, Sang Youl Lee, June O Song, Se Yeon Jung, Tae Yeon Seong, 2405497


    124. Light-emitting diode device for enhancing light extraction efficiency and current injection , U.S.A., Tae Yeon Seong, Jee Yun Lee, Dae Hyen Kim, Ki Seok Kim, 9978911


    123. LIGHT EMITTING DEVICE ,E.P.O, Tae-yeon Seong, 3136457


    122. Light emitting diode , E.P.O, Kwang Ki Choi, Hwan Hee Jeong, Ji Hyung Moon, Sang Youl Lee, June O Song, Se Yeon Jung, Tae Yeon Seong, 2405495


    121. Transparent conductive electrodes to improve the light extraction efficiency for Red (IR) LEDs, T-Y Seong, D-H Kim, PCT/KR2016/010870


    120. Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates, U.S.A., Tae-yeon Seong, 14/481,993


    119. Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates, U.S.A., Tae-yeon Seong, 14/024,129


    118. Supporting substrate for fabrication of semiconductor light emitting device and semiconductor light emitting device using the same, E.P.O, Tae-yeon Seong, 20,090,758,506


    117. 수직 구조 반도체 발광소자 제조용 지지 기판 및 이것을 이용한 수직 구조 반도체 발광소자 (SUPPORTING SUBSTRATE FOR PRODUCING VERTICALLY STRUCTURED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND VERTICALLY STRUCTURED SEMICONDUCTOR LIGHT-EMITTING ELEMENT EMPLOYING THE SAME), JAPAN, Tae-yeon Seong, 2013-128536


    116. Light emitting diode and method of fabricating the same, CHINA, Kwang Ki Choi, Hwan Hee Jeong, Sang Youl Lee, June O Song, Ji Hyung Moon, Se Yeon Jung, Tae-yeon Seong, 201,110,192,235


    115. Light emitting diode and method of fabricating the same, E.P.O, Kwang Ki Choi, Hwan Hee Jeong, Sang Youl Lee, June O Song, Ji Hyung Moon, Se Yeon Jung, Tae-yeon Seong, 20,110,172,712


    114. Light emitting device having an roughened surface and method of manufacturing the same, E.P.O, Kwang Ki Choi, Hwan Hee Jeong, Ji Hyung Moon, Sang Youl Lee, June O Song, Se Yeon Jung, Tae-Yeon Seong, 20,110,172,594


    113. Light emitting device and method of fabricating the same, U.S.A., Kwang Ki Choi, Hwan Hee Jeong, Sang Youl Lee, June O Song, Ji Hyung Moon, Se Yeon Jung, Tae-yeon Seong, 13/175,549


    112. Light emitting device, method of manufacturing the same, light emitting device package, and lighting system, U.S.A., Kwang Ki Choi, Hwan Hee Jeong, Ji Hyung Moon, Sang Youl Lee, June O Song, Se Yeon Jung, Tae-yeon Seong, 13/175,424


    111. Light emitting device and light emitting device package, CHINA, Kwang Ki Choi, Ji Hyung Moon, June O Song, Sang Youl Lee, Tae-Yeon Seong, Se Yeon Jung, Joon Woo Jeon, Seong Han Park, 201,110,147,096


    110. Light emitting device and light emitting device package, U.S.A., Kwang Ki Choi, Ji Hyung Moon, June O Song, Sang Youl Lee, Tae-Yeon Seong, Se Yeon Jung, Joon Woo Jeon, Seong Han Park, 13/116,192


    109. Light emitting device and light emitting device package, E.P.O, Kwang Ki Choi, Ji Hyung Moon, June O Song, Sang Youl Lee, Tae-Yeon Seong, Se Yeon Jung, Joon Woo Jeon, Seong Han Park, 20,110,167,746


    108. Low resistance electrode and compound semiconductor light emitting device including the same, U.S.A., Joon Seop Kwak, Tae-Yeon Seong, Jae Hee Cho, June-O Song, Dong Seok Leem, Hyun Soo Kim, 13/095,487


    107. Flip-chip light emitting diodes and method of manufacturing thereof, U.S.A., Tae-yeon Seong, June-O Song, Kyoung-Kook Kim, Woong-ki Hong, 12/926,638


    106. Vertical structured semiconductor light emitting device and its manufacturing method, TAIWAN, Tae-yeon Seong, 2010-140661


    105. Vertical-structure semiconductor light emitting element and a production method therefor, U.S.A., Tae-yeon Seong, 13/505,618


    104. Top-emitting light emitting diodes and methods of manufacturing thereof, U.S.A., Tae-yeon Seong, June-O Song, Kyoung-Kook Kim, Woong-ki Hong, 12/923,053


    103. Semiconductor device and method of fabricating the same, U.S.A., Tae-yeon Seong, 12/727,521


    102. Supporting substrate for manufacturing vertically-structured semiconductor light-emitting device and semiconductor light-emitting device using the supporting substrate, U.S.A., Tae-yeon Seong, 13/054,472


    101. Supporting substrate for producing a vertically structured semiconductor light-emitting element, and the semiconductor light-emitting element employing the same, CHINA, Tae-yeon Seong, 200,980,128,829


    100. Supporting substrate for producing a vertically structured semiconductor light-emitting element, and a vertically structured semiconductor light-emitting element employing the same, E.P.O, Tae-yeon Seong, 20,090,798,112


    99. Supporting substrate for manufacturing vertically-structured semiconductor light emitting device and semiconductor light emitting device using the supporting substrate, E.P.O, Tae-yeon Seong, 20,110,002,050


    98. Supporting substrate for manufacturing vertically-structured semiconductor light emitting device and semiconductor light emitting device using the supporting substrate, E.P.O, Tae-yeon Seong, 20,110,002,049


    97. Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same, U.S.A., June-O Song, Tae-yeon Seong, Kyoung-Kook Kim, Hyun-gi Hong, Kwang-ki Choi, Hyun-Soo Kim, 12/458,136


    96. Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates, CHINA, Tae-yeon Seong, 200,980,130,052


    95. Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates, U.S.A., Tae-yeon Seong, 12/995,998


    94. Nitride-based light-emitting device and method of manufacturing the same, U.S.A., June-O Song, Tae-yeon Seong, 12/335,845


    93. Nitride-Based Light-Emitting Device and Method of Manufacturing the Same, U.S.A., Tae-yeon Seong, Kyoung-Kook Kim, June-O Song, Dong-seok Leem, 12/275,484


    92. Nitride light emitting device and manufacturing method thereof, U.S.A., June-O Song, Tae-yeon Seong, Dong-seok Leem, 12/071,036


    91. Reflective electrode and compound semiconductor light emitting device including the same, U.S.A., Joon-seop Kwak, Tae-yeon Seong, June-O Song, 12/000,870


    90. 다층 반사막 전극 및 그것을 가진 화합물 반도체 발광소자 (MULTILAYER REFLECTION FILM ELECTRODE AND COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE WITH SAME), JAPAN, June-O Song, Kwang-ki Choi, Tae-yeon Seong, Kyoung-kook Kim, Hyun-gi Hong, Hyun-Soo Kim, 2007-185960


    89. Top-emitting N-based light emitting device and method of manufacturing the same, U.S.A., Tae-yeon Seong, Tak-hee Lee, Dong-seok Leem, 11/812,305


    88. Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same, U.S.A., June-O Song, Kwang-ki Choi, Tae-yeon Seong, Kyoung-Kook Kim, Hyun-gi Hong, Hyun-Soo Kim, 11/808,172


    87. Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same, CHINA, June-O Song, Kwang-ki Choi, Tae-yeon Seong, Kyoung-Kook Kim, Hyun-gi Hong, Hyun-Soo Kim, 200,710,105,189


    86. Top-emitting n-based light emitting device and method of manufacturing the same, CHINA, Tae-yeon Seong, Tak-hee Lee, Dong-seok Leem, 200,710,103,943


    85. Light emitting device and method of manufacturing the same, U.S.A., June-O Song, Dong-seok Leem, Tae-yeon Seong, 11/714,843


    84. Flip-chip nitride light emitting device and method of manufacturing thereof, U.S.A., Tae-yeon Seong, June-O Song, 11/698,193


    83. Nitride-based light emitting device and method of manufacturing the same, U.S.A., Tae-yeon Seong, Kyoung-Kook Kim, June-O Song, Dong-seok Leem, 11/649,236


    82. Optical device and method of fabricating the same, E.P.O, Tae-yeon Seong, 20,060,835,223


    81. Optical device and method of fabricating the same, U.S.A., Tae-yeon Seong, 12/097,359


    80. Optical device and method of fabricating the same, CHINA, Tae-yeon Seong, 200,680,047,270


    79. Semiconductor device and fabricating method thereof, CHINA, Tae-yeon Seong, 201,010,218,323


    78. Group-III nitride-based light emitting device, CHINA, Tae-yeon Seong, 200,680,049,728


    77. Group-III nitride-based light emitting device, U.S.A., Tae-yeon Seong, 12/159,084


    76. Semiconductor Device and Method of Fabricating the Same, U.S.A., Tae-yeon Seong, 12/092,017


    75. Semiconductor device and fabricating method thereof, CHINA, Tae-yeon Seong, 201,010,218,344


    74. Semiconductor device and method of fabricating the same, CHINA, Tae-yeon Seong, 200,680,050,123


    73. Method of forming ohmic contact layer and method of fabricating light emitting device having ohmic contact layer, U.S.A., Jae-hee Cho, Dong-seok Leem, Tae-yeon Seong, Cheol-soo Sone, 11/435,827


    72. Method of forming ohmic contact layer and method of fabricating light emitting device having ohmic contact layer, CHINA, Jae-hee Cho, Dong-seok Leem, Tae-yeon Seong, Cheol-soo Sone, 200,610,084,821


    71. 발광소자용 저항 접점층의 제조 방법 및 이것을 가진 발광소자의 제조 방법 (METHOD OF PRODUCING OHMIC CONTACT LAYER FOR LIGHT EMITTING ELEMENT AND METHOD OF PRODUCING LIGHT EMITTING ELEMENT WITH THE OHMIC CONTACT LAYER), JAPAN, Jae-hee Cho, Dong-seok Leem, Tae-yeon Seong, Cheol-soo Sone, 2006-133055


    70. Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the same, U.S.A., June-O Song, Dong-seok Leem, Tae-yeon Seong, 11/265,098


    69. Fabricating method of semiconductor device, CHINA, Tae-yeon Seong, 201,010,616,570


    68. 반사 전극 및 이것을 가지는 화합물 반도체 발광소자 (REFLECTING ELECTRODE, AND COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING THE SAME), JAPAN, Joon-seop Kwak, Tae-yeon Seong, June-O Song, 2005-248343


    67. Top-emitting light emitting diodes and methods of manufacturing thereof, U.S.A., Tae-yeon Seong, June-O Song, Kyoung-Kook Kim, Woong-ki Hong, 11/632,183


    66. Top-emitting light emitting diodes and method of manufacturing thereof, CHINA, Tae-yeon Seong, June-O Song, Kyoung-Kook Kim, Woong-ki Hong, 200,580,032,271


    65. 화합물 반도체 소자의 전극 형성 방법 (METHOD OF FORMING ELECTRODE FOR COMPOUND SEMICONDUCTOR DEVICE), JAPAN, Joon-seop Kwak, Tae-yeon Seong, June-O Song, 2005-209278


    64. Method of forming electrode for compound semiconductor device, U.S.A., Tae-yeon Kwak, June-O Song, Tae-yeon Seong, 11/183,908


    63. Flip-chip light emitting diodes and method of manufacturing thereof, U.S.A., Tae-yeon Seong, June-O Song, Kyoung-Kook Kim, Woong-ki Hong, 11/632,279


    62. Flip-chip light emitting diodes and method of manufacturing thereof, CHINA, June-O Song, Tae-yeon Seong, Woong-ki Hong, Kyoung-Kook Kim, 200,580,026,907


    61. Method of forming electrode for compound semiconductor device, E.P.O, Tae-yeon Kwak, June-O Song, Tae-yeon Seong, 20,050,254,035


    60. Reflective electrode and compound semiconductor light emitting device including the same, CHINA, June-O Song, Tae-yeon Seong, Joon-seop Kwak, 200,510,054,281


    59. Reflective electrode and compound semiconductor light emitting device including the same, U.S.A., Joon-seop Kwak, Tae-yeon Seong, June-O Song, 11/080,509


    58. Nitride-based light-emitting device and method of manufacturing the same, CHINA, June-O Song, Tae-yeon Seong, Dong-seok Leem, Kyoung-kook Kim, 200,510,068,540


    57. Nitride-based light-emitting device having grid cell layer, U.S.A., Tae-yeong Seong, Kyoung-Kook Kim, June-O Song, Dong-seok Leem, 11/077,536


    56. 질화물계 발광소자 및 그 제조 방법 (NITRIDE-BASED LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD), JAPAN, Tae-yeon Seong, Kyoung-kook Kim, June-O Song, Dong-seok Leem, 2005-069399


    55. 툽에밋트형 질화물계 발광소자 및 그 제조 방법 (TOP EMIT TYPE NITRIDE-BASED LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD), JAPAN, Tae-yeon Seong, Kyoung-kook Kim, June-O Song, Dong-seok Leem, Jung-inn Sohn, 2005-068240


    54. Top-emitting nitride-based light-emitting device with ohmic characteristics and luminous efficiency, U.S.A., Tae-yeong Seong, Kyoung-Kook Kim, June-O Song, Dong-seok Leem, Jung-inn Sohn, 11/076,249


    53. III-V 일족 GaN계 화합물 반도체 발광소자 및 그 제조 방법 (GROUP III-V GaN-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING SAME), JAPAN, Joon-seop Kwak, Tae-yeon Seong, June-O Song, Dong-seok Leem, 2005-016761


    52. Nitride light emitting device and manufacturing method thereof, CHINA, June-O Song, Tae-yeon Seong, Dong-seok Leem, 200,410,104,923


    51. Flip-chip light emitting diode and method of manufacturing the same, CHINA, June-O Song, Tae-yeon Seong, Dong-seok Leem, 200,410,103,926


    50. 플립 칩형 질화물계 발광소자 및 그 제조 방법 (FLIP-CHIP NITRIDE LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD), JAPAN, Tae-yeon Seong, June-O Song, 2004-371545


    49. 플립 칩형의 질화물계 발광소자 및 그 제조 방법 (FLIP-CHIP NITRIDE LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD), JAPAN, Tae-yeon Seong, June-O Song, Dong-seok Leem, 2004-371518


    48. 툽에밋트형 질화물계 발광소자 및 그 제조 방법, JAPAN, June-O Song, Tae-yeon Seong, Joon-seop Kwak, Woong-ki Hong, 2004-369466


    47. Flip-chip nitride light emitting device and method of manufacturing thereof, U.S.A., Tae-yeon Seong, June-O Song, 11/016,956


    46. Low resistance electrode and compound semiconductor light emitting device including the same, CHINA, June-O Song, Tae-yeon Seong, Dong-seok Leem, Jae-hee Cho, Joon-seop Kwak, Hyun-soo Kim, 200,410,098,366


    45. Gan-based III - V group compound semiconductor light emitting device and method of fabricating the same, CHINA, June-O Song, Tae-yeon Seong, Dong-seok Leem, Joon-seop Kwak, 200,410,098,373


    44. Nitride light emitting device and manufacturing method thereof, U.S.A., June-O Song, Tae-yeon Seong, Dong-seok Leem, 11/002,795


    43. Flip-chip light emitting diode and method of manufacturing the same, U.S.A., Tae-yeon Seong, June-O Song, Dong-seok Leem, 11/002,797


    42. GaN-based compound semiconductor light emitting device and method of fabricating the same, E.P.O, Joon-seop Kwak, Dong-swok Leem, Tae-yeon Seong, June-O Song, 20,040,257,505


    41. Flip-chip light emitting diode and method of manufacturing the same, CHINA, Tae-yeon Seong, June-O Song, Dong-seok Leem, Hyun-ki Hong, 200,410,095,820


    40. 플립 칩형 질화물계 발광소자 및 그 제조 방법 (FLIP CHIP TYPE NITRIDE LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR), JAPAN, Tae-yeon Seong, June-O Song, Dong-seok Leem, Hyun-ki Hong, 2004-340190


    39. 질화물계 발광소자 및 그 제조 방법, JAPAN, June-O Song, Tae-yeon Seong, 2004-329671


    38. Nitride-based light-emitting device and method of manufacturing the same, CHINA, June-O Song, Tae-yeon Seong, 200,410,100,599


    37. Electrode layer, light emitting device including the same, and method of forming the electrode layer, CHINA, Joon-seop Kwak, Ok-hyun Nam, Tae-yeon Seong, June-O Song, 200,410,094,673


    36. Nitride-based light-emitting device, U.S.A., June-O Song, Tae-yeon Seong, 10/984,855


    35. Nitride-based semiconductor light-emitting device and method of manufacturing the same, E.P.O, June-O Song, Tae-yeon Seong, 20,040,256,922


    34. Transparent electrode layer, semiconductor light emitting device including the same, and method of forming the transparent electrode layer, E.P.O, Tae-yeon Seong, June-O Song, Ok-Hyun Nam, Joon-Seop Kwak, 20,040,256,921


    33. Flip-chip light emitting diode and method of manufacturing the same, U.S.A., Tae-yeon Seong, June-O Song, Dong-seok Leem, Hyun-gi Hong, 10/981,502


    32. Low resistance electrode and compound semiconductor light emitting device including the same, U.S.A., Joon-seop Kwak, Tae-yeon Seong, Jae-hee Cho, June-O Song, Dong-seok Leem, Hyun-Soo Kim, 10/979,240


    31. Electrode layer, light emitting device including the same, and method of forming the electrode layer, U.S.A., Joon-seop Kwak, Ok-Hyun Nam, Tae-yeon Seong, June-O Song, 10/978,811


    30. GaN-based III - V group compound semiconductor light emitting device and method of fabricating the same, U.S.A., Joon-seop Kwak, Tae-yeon Seong, June-O Song, Dong-seok Leem, 10/978,426


    29. III-V족GaN계 화합물 반도체 및 그에 적용되는 p형 전극 (III-V GaN BASED COMPOUND SEMICONDUCTOR AND p-TYPE ELECTRODE APPLIED THERETO), JAPAN, Joon-seop Kwak, Tae-yeon Seong, Ok-hyun Nam, June-O Song, Dong-seok Leem, 2004-312883


    28. GaN-based III-V group compound semiconductor device and p-type electrode for the same, CHINA, Ok-hyun Nam, June-O Song, Tae-yeon Seong, Dong-seok Leem, Joon-seop Kwak, 200,410,087,995


    27. GaN-based III-V group compound semiconductor device and p-type electrode for this device, E.P.O, Joon-seop Kwak, Tae-yeon Seong, Ok-Hyun Nam, June-O Song, Dong-seok Leem, 20,040,256,575


    26. 질화물계 발광소자 및 그 제조 방법 (NITRIDE SYSTEM LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR), JAPAN, Tae-yeon Seong, June-O Song, Dong-seok Leem, 2004-302777


    25. Nitride-based light emitting device and method of manufacturing the same, U.S.A., Tae-yeon Seong, June-O Song, Dong-seok Leem, 10/963,725


    24. Nitride-based light emitting device and method of manufacturing the same, CHINA, June-O Song, Tae-yeon Seong, Dong-seok Leem, Kyoung-kook Kim, 200,410,092,115


    23. Nitride-based semiconductor light emitting device and method of manufacturing the same, E.P.O, Tae-Yeon Seong, Kyoung-Kook Kim, June-O Song, Dong-Seok Leem, 20,040,256,154


    22. Method of manufacturing a gallium nitride-based light emitting diode, E.P.O, Tae-Yeon Seong, Kyoung-Kook Kim, June-O Song, Dong-Seok Leem, 2,010,181,626


    21. Nitride-based light emitting device and method of manufacturing the same, U.S.A., Tae-yeon Seong, Kyoung-Kook Kim, June-O Song, Dong-seok Leem, 10/957,704


    20. 질화물계 발광소자 및 그 제조 방법 (NITRIDE-BASED LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR), JAPAN, Tae-yeon Seong, Kyung-kook Kim, June-O Song, Dong-seok Leem, 2004-290424


    19. GaN-based III - V group compound semiconductor device and p-type electrode for the same, U.S.A., Joon-seop Kwak, Tae-yeon Seong, Ok-Hyun Nam, June-O Song, Dong-seok Leem, 10/953,282


    18. Light emitting device and method of manufacturing the same, CHINA, June-O Song, Tae-yeon Seong, Dong-seok Leem, 200,410,103,818


    17. 질화물계 발광소자 및 그 제조 방법 (NITRIDE LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR), JAPAN, June-O Song, Dong-seok Leem, Tae-yeon Seong, 2004-261354


    16. Semiconductor light emitting device and method of manufacturing the same, E.P.O, June-O Song, Tae-Yeon Seong, Dong-Seok Leem, 20,040,255,416


    15. Light emitting device and method of manufacturing the same, U.S.A., June-O Song, Dong-seok Leem, Tae-yeon Seong, 10/930,915


    14. 질화물계 발광소자 및 그 제조 방법 (NITRIDE-BASED LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF), JAPAN, June-O Song, Tae-yeon Seong, 2004-245933


    13. Transparent thin film electrode for light emitting diode and laser diode, U.S.A., June-O Song, Dong-seok Leem, Tae-yeon Seong, 10/923,036


    12. 고품위 발광 다이오드 및 레이저 다이오드 구현을 위한 투명 박막 전극 (TRANSPARENT THIN-FILM ELECTRODE FOR EMBODYING HIGH-QUALITY LIGHT EMITTING DIODE AND LASER DIODE), JAPAN, June-O Song, Dong-seok Leem, Tae-yeon Seong, 2004-242404


    11. Nitride-based light emitting device, and method of manufacturing the same, E.P.O, June-O Song, Tae-yeon Seong, 20,040,254,402


    10. Nitride-based light emitting device, and method of manufacturing the same, CHINA, June-O Song, Tae-yeon Seong, 200,410,054,539


    9. Nitride-based light emitting device, and method of manufacturing the same, U.S.A., June-O Song, Tae-yeon Seong, 10/891,014


    8. 고성능의 질화갈륨계 발광소자를 위한 박막 전극 및 그 제조 방법 (THI2015-07-14N FILM ELECTRODE FOR HIGH-PERFORMANCE GALLIUM-NITRIDE SYSTEM LIGHT EMITTING DEVICE, AND ITS MANUFACTURING METHOD), JAPAN, Dong-seok Leem, Tae-yeon Seong, June-O Song, Sang-ho Kim, 2004-205218


    7. Thin film electrode for high-quality GaN optical devices, U.S.A., Dong-seok Leem, June-O Song, Sang-Ho Kim, Tae-yeon Seong, 10/886,686


    6. 박막 전극 및 그 제조 방법 (THIN-FILM ELECTRODE AND METHOD OF MANUFACTURING THE SAME), JAPAN, June-O Song, Dong-seok Leem, Tae-yeon Seong, 2004-104946


    5. Thin-film electrode, gallium nitride base optical device using the same and method of manufacturing the same, CHINA, June-O Song, Tae-yeon Seong, Dong-seok Leem, 200,410,031,246


    4. Ohmic contacts using Ni-based solid solution for p-type GaN in LEDs, E.P.O, Dong-seok Leem, Tae-yeon Seong, June-O Song, 20,040,251,791


    3. Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the same, U.S.A., June-O Song, Dong-seok Leem, Tae-yeon Seong, 10/801,823


    2. Method of fabricating an ohmic metal electrode for use in nitride compound semiconductor devices, U.S.A., Ja Soon Jang, Tae-Yeon Seong, Seong Ju Park, 09/840,171


    1. Metal thin film with ohmic contact for light emit diodes, U.S.A., Ja Soon Jang, Hyo Keun Kim, Seong Ju Park, Tae-Yeon Seong, Heung Kyu Jang, 09/213,735