Optoelectronic Materials and Device Lab

2012

314. Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes, Joon-Woo Jeon, Sang Youl Lee, June-O Song, Tae-Yeon Seong,CURRENT APPLIED PHYSICS, 12, 225-227, (2012)

2011

313. GUIDED NANOSTRUCTURES USING ANODIZED ALUMINUM OXIDE TEMPLATES, Kunbae Noh, Karla S.Brammer, Tae-Yeon Seong, Sungho Jin, NANO, 6, 541-555,(2011)

312. Electrical characteristics of Cu-doped In(2)O(3)/Sb-doped SnO(2) ohmic contacts for high-performance GaN-based light-emitting diodes, Joon-Ho Oh, Tae-Yeon Seong, H.-G. Hong, Kyoung-Kook Kim, S.-W Yoon,J.-P. Ahn, JOURNAL OF ELECTROCERAMICS, 27, 109-113, (2011)

311. Highly Reliable Ohmic Contacts to N-Polar n-Type GaN for High-Power Vertical Light-Emitting Diodes, Joon-Woo Jeon, Sang Youl Lee, June-O Song, Tae-Yeon Seong,JOURNAL OF ELECTRONIC MATERIALS, 40, 2173-2178, (2011)

310. Improved Light Output of GaN-Based Light-Emitting Diodes by Using AgNi Reflective Contacts, Se-Yeon Jung, Sang Youl Lee, June-O Song, Sungho Jin, Tae-Yeon Seong, IEEE PHOTONICS TECHNOLOGY LETTERS, 23, 1784-1786, (2011)

309. Optical analysis of the microstructure of a Mo back contact for Cu(In,Ga)Se(2) solar cells and its effects on Mo film properties and Na diffusivity, Ju-Heon Yoon, Sunghun Cho, Won Mok Kim, Jong-Keuk Park, Young-Joon Baik, Taek Sung Lee, Tae-Yeon Seong, Jeung-Hyun Jeong, SOLAR ENERGY MATERIALS AND SOLAR CELLS, 95, 2959-2964, (2011)

308. High-temperature stability of molybdenum (Mo) back contacts for CIGS solar cells: a route towards more robust back contacts, Ju-Heon Yoon, Kwan-Hee Yoon, Won-Mok Kim, Jong-Keuk Park, Young-Joon Baik, Tae-Yeon Seong, Jeung-Hyun Jeong, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 44, 425302, (2011)

307. Effect of Ag nanoparticle size on the plasmonic photocatalytic properties of TiO(2) thin films, Joon-Ho Oh, Hyunju Lee, Donghwan Kim, Tae-Yeon Seong, SURFACE & COATINGS TECHNOLOGY, 206, 185-189, (2011)

306. Enhancement of light output power of GaN-based vertical light emitting diodes by optimizing n-GaN thickness, Hwan-Hee Jeong, Sang-youl Lee, Kwang-Ki Choi, June-O Song, Jung-Hee Lee, Tae-Yeon Seong, MICROELECTRONIC ENGINEERING, 88, 3164-3167, (2011)

305. Fabrication and Magnetic Properties of Nonmagnetic Ion Implanted Magnetic Recording Films for Bit-Patterned Media, Chulmin Choi, Kunbae Noh, Young Oh, Cihan Kuru, Daehoon Hong, Li-Han Chen,Sy-Hwang Liou, Tae-Yeon Seong, Sungho Jin, IEEE TRANSACTIONS ON MAGNETICS, 47, 2532-2535, (2011)

304. Superplastic Deformation of Defect-Free Au Nanowires via Coherent Twin Propagation, Jong-Hyun Seo, Youngdong Yoo, Na-Young Park, Sang-Won Yoon, Hyoban Lee, Sol Han, Seok-Woo Lee, Tae-Yeon Seong, Seung-Cheol Lee, Kon-Bae Lee, Pil-Ryung Cha, Harold S. Park, Bongsoo Kim, Jae-Pyoung Ahn, NANO LETTERS, 11, 3499-3502, (2011)

303. Facile Control of C(2)H(5)OH Sensing Characteristics by Decorating Discrete Ag Nanoclusters on SnO(2) Nanowire Networks, In-Sung Hwang, Joong-Ki Choi, Hyung-Sic Woo, Sun-Jung Kim, Se-Yeon Jung,Tae-Yeon Seong, Il-Doo Kim, Jong-Heun Lee, ACS APPLIED MATERIALS & INTERFACES, 3, 3140-3145, (2011)

302. One-pot fabrication of hollow SiO(2) nanowires via an electrospinning technique, Geon-Hyoung An, Sang-Yong Jeong, Tae-Yeon Seong, Hyo-Jin Ahn, MATERIALS LETTERS, 65, 2377-2380, (2011)

301. Effect of oxygen plasma-induced current blocking on the performance of GaN-based vertical light-emitting diodes, Sang Youl Leee, Kwang Ki Choi, Hwan Hee Jeong, Eun Joo Kim, June O. Song, Joon-Woo Jeon, Tae-Yeon Seong, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29, 041203, (2011)

300. Thermally Stable and Reflective RhZn/Ag Ohmic Contacts to p-type GaN for Near-UV Flip-chip Light-emitting Diodess, Seong-Han Park, Joon-Woo Jeon, Jeong-Tak Oh, Tae-Yeon Seong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 59, 156-160, (2011)

299. Improved Output Power of GaN-Based Vertical Light Emitting Diodes Fabricated with Current Blocking Region Formed by O(2) Plasma Treatment, Sang Youl Lee, Kwang Ki Choi, Hwan Hee Jeong, Eun Joo Kim, Hyo Kun Son, Sung Jin Son, June-O Song, Tae-Yeon Seong, JAPANESE JOURNAL OF APPLIED PHYSICS, 50, 076504, (2011)

298. Improving the thermal stability of nickel monosilicide thin films by combining annealing with the use of an interlayer and a capping layer, Bong-Jun Park, Sang-Yong Jeong, Jun-Ho Kim, Tae-Yeon Seong,Chel-Jong Choi, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 29, 031503, (2011)

297. Improved Electrostatic Discharge Protection in GaN-Based Vertical Light-Emitting Diodes by an Internal Diode, Hwan Hee Jeong, Sang Youl Lee, Jung-Hyeok Bae, Kwang Ki Choi, June-O Song, Sung Jin Son, Yong-Hyun Lee, Tae-Yeon Seong, IEEE PHOTONICS TECHNOLOGY LETTERS, 23, 423-425, (2011)

296. Preparation and characterization of electro-spun RuO(2)-Ag(2)O composite nanowires for electrochemical capacitors, Jung-Bae Lee, Sang-Yong Jung, Won-Jin Moon, Tae-Yeon Seong, Hyo-Jin Ahn, JOURNAL OF ALLOYS AND COMPOUNDS, 509, 4336-4340, (2011)

295. Growth of amorphous silica nanowires using nickel silicide catalyst by a thermal annealing process, Jin-Bok Lee, Chel-Jong Choi, Tae-Yeon Seong, CURRENT APPLIED PHYSICS, 11, 192-202, (2011)

294. Synthesis and characterization of Co(3)O(4)/RuO(2) composite nanofibers fabricated by an electrospinning method, Sang-Yong Jung, Hyo-Jin Ahn, Tae-Yeon Seong, MATERIALS LETTERS, 65, 471-473, (2011)

293. Electrochemical properties of the carbon-coated lithium vanadium oxide anode for lithium ion batteries , SangMin Lee, Hyung Sun Kim, Tae-Yeon Seong, JOURNAL OF ALLOYS AND COMPOUNDS, 509, 3136-3140, (2011)

292. Effects of deposition temperatures and annealing conditions on the microstructural, electrical and optical properties of polycrystalline Al-doped ZnO thin films, Joon-Ho Oh, Kyoung-Kook Kim, Tae-Yeon Seong, APPLIED SURFACE SCIENCE, 257, 2731-2736, (2011)

291. Highly self-assembled nanotubular aluminum oxide by hard anodization, Kunbae Noh, Karla S. Brammer, Hyunsu Kim, Se-Yeong Jung,Tae-Yeon Seong, Sungho Jin, JOURNAL OF MATERIALS RESEARCH, 26, 186-193, (2011)

2010

290. Electrical characteristics of In/ITO p-type ohmic contacts for high-performance GaN-based light-emitting diodes, Joon-Ho Oh, Kyoung-Kook Kim, Hyun-Gi Hong, Kyeong-Jae Byeon, Heon Lee, Sang-Won Yoon, Jae-Pyoung Ahn, Tae-Yeon Seong, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 13, 272-275, (2010)

289. Structural and Electrochemical Properties of Ag Nano-Dots Combined Amorphous Si Electrodes for Thin-Film Lithium Rechargeable Batteries, Hyo-Jin Ahn, Youn-Su Kim, Hee-Sang Shim, Byung Kyu Park, Won-Jin Moon, Won Bae Kim, Tae-Yeon Seong, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 10, 8199-8203, (2010)

287. Fabrication of monolithic polymer nanofluidic channels using nanowires as sacrificial templates, Kyo Seon, Chu, Seungwook Kim, Haegeun Chung, Joon-Ho Oh, Tae-Yeong Seong, Boo Hyun An, Young Keun Kim, Jae Hyoung Park, Young Rag Do, Woong Kim, NANOTECHNOLOGY, 21, 425302, (2010)

286. Effect of composition and deposition temperature on the characteristics of Ga doped ZnO thin films, Y.H. Kim, J. Jeong, K.S. Lee, B. Cheong, T-Y Seong, W.M. Kim, APPLIED SURFACE SCIENCE, 257, 109-115, (2010)

285. Hydrogen in polycrystalline ZnO thin films, W.M. Kin, Y.H. Kim, J.S. Kim, J. Jeong, Y-J Baik, J-K Park, K.S. Lee, T-Y Seong, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 43, 365406, (2010)

284. Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes, Joon-Woo Jeon, Seong-Han Park, Se-Yeon Jung, Jihyung Moon, June-O Song, Tae-Yeon Seong, APPLIED PHYSICS LETTERS, 97, 092103, (2010)

283. Epitaxial growth of Cr(2)O(3) thin film on Al(2)O(3) (0001) substrate by radio frequency magnetron sputtering combined with rapid-thermal annealing, Sang-Yong Jseong, Jin-Bok Lee, Hyunseok Na, Tae-Yeon Seong, THIN SOLID FILMS, 518, 4813-4816, (2010)

282. Characteristics of ZnO:Al thin films co-doped with hydrogen and fluorine, Y.H. Kim, J. Jeong, J.K. Park, Y.J. Baik, T.Y. Seong, W.M. Kim, APPLIED SURFACE SCIENCE, 256, 5102-5107, (2010)

281. Electrical, structural and etching characteristics of ZnO:Al films prepared by rf magnetron, Yong-Hyun Kim, Kyung Seok Lee, Taek Sung Lee, Byung-ki Cheong, Tae-Yeon Seong, Won Mok Kim, CURRENT APPLIED PHYSICS, 10, S278-S281, (2010)

280. Insights into the reactive ion etching mechanism of nanocrystalline diamond films as a function of film microstructure and the presence of fluorine gas, Ju-Heon Yoon, Wook-Seong Lee, Jong-Keuk Park, Gyu Weon Hwang, Young-Joon Baik, Tae-Yeon Seong, Jeung-hyun Jeong, Journal of Applied Physics, 107, 044313 (2010)

279.Improved electrical and thermal properties of nickel silicides by using a NiCo interlayer, Jin-Bok Lee, Sang-Yong Jeong, Bong-Jun Park, Chel-Jong Choi, Kwon Hong, Sung-Jin Whang, Tae-Yeon Seong, SUPERLATTICES AND MICROSTRUCTURES, 47, 259-265 (2010)

278. Ohmic Contact Technology For GaN-Based Light Emitting Diodes: Role of P-Type Contact, June-O Song, Jun-Seok Ha, Tae-Yeon Seong, IEEE Transactions on Electron Devices (Invited review article), 57, 42-59 (2010)

277. Dual-Color Emission in Hybrid III-Nitride/ZnO Light Emitting Diodes, Namgoong Gon, Elaissa Trybus, Na Hyunseok, Maurice C. Cheung, W. Alan Doolittle, Alexander N. Cartwright, Ian Ferguson, Tae-Yeon Seong, Jeff Nause, APPLIED PHYSICS EXPRESS, 3, 022101, (2010)

276. Improvement of the Light Output Power of GaN-Based Vertical Light Emitting Diodes by a Current Blocking Layer, Hwan Hee Jeong, Sang Youl Lee, Yong Kyu Jeong, Kwang Ki Choi, June-O Song, Yong-Hyun Lee, Tae-Yeon Seong, ELECTROCHEMICAL AND SOLID STATE LETTERS, 13, H237-H239, (2010)

275. Low Resistance CrB(2)/Ti/Al Ohmic Contacts to N-face n-GaN for High Power GaN-Based Vertical Light Emitting Diodes, Seong-Han Park, Joon-Woo Jeon, Sang Youl Lee, Jihyung Moon, June-O Song, Tae-Yeon Seong, ELECTROCHEMICAL AND SOLID STATE LETTERS, 13, H333-H335 (2010)

274. Electrical Characteristics of V/Ti/Au Contacts to Ga-Polar and N-Polar n-GaN Prepared by Different Methods, Joon-Woo Jeon, Seong-Han Park, Se-Yeon Jung, Jihyung Moon, June-O Song, Namgoong Gon, Tae-Yeon Seong, ELECTROCHEMICAL AND SOLID STATE LETTERS, 13, H125-H127 (2010)

273. Improved light output power of GaN-based light-emitting diodes by enhancing current spreading using single wall carbon nanotubes, Se-Yeon Jung, Kyung-Heon Kim, Sang-Yong Jeong, Joon-Woo Jeon, Sang Yeol Lee, June-O Song, Young-Tae Byun, Tae-Yeon Seong, Electrochemical and Solid-State Letters, 13, H33-H35 (2010) -- selected for the December 14, 2009 issue of Virtual Journal of Nanoscale Science & Technology

2009

272. Fabrication of High Performance GaN-Based Vertical Light-Emitting Diodes Using a Transparent Conducting Indium Tin Oxide Channel Layer, Hwan Hee Jeong, Sang You Lee, June-O Song, Kwang Ki Choi, Seok-Hun Lee, Hee Seok Choi, Tchang-Hun Oh, Yong-Hyun Lee, Tae-Yeon Seong, Electrochemical and Solid-State Letters, 12, H322-H324 (2009)

271. Wafer-level fabrication of GaN-based vertical light-emitting diodes using a multi-functional bonding material system, Sang-You Lee, Kwang Ki Choi, Hwan-Hee Jeong, Hee Seok Choi, Tchang-Hun Oh, June O Song, Tae-Yeon Seong, Semiconductor Science and Technology, 24, 092001 (2009) - selected as highlights of 2009 of Semiconductor Science and Technnology

270. Improved Electrical and Thermal Properties of Ag Contacts for GaN-based Flip-Chip Light-Emitting Diodes by using a NiZn Alloy Capping Layer, S-Y Jung, H-Y Kim, and T-Y Seong, Superlattices and Microstructures, 46, 578-584, (2009).

269. Electrical Properties of Ti/Al Ohmic Contacts to Sulfur-Passivated N-Face n-Type GaN for Vertical-Structure Light-Emitting Diodes, S-Y Jung, T-Y Seong, H-S Kim, K-S Park, J-G Park, and G Namgoong, Electrochemical and Solid-State Letters, 12, H275, (2009).

268. Effects of substrate temperature and Zn addition on the properties of Al-doped ZnO films prepared by magnetron sputtering, Y.H. Kim, K.S. Lee, T.S. Lee, B. Cheong, T.-Y. Seong, and W.M. Kim, Applied Surface Science, 255, 7251, (2009).

267. Carrier Concentration Dependence of the Electrical Behaviors of ITO Contacts on n-Type ZnO , S-H Kim, D-K Hwang, S-J Park, and T-Y Seong, Journal of the Korean Physical Society, 54, 740, (2009).

266. Electrical Characteristics of Metal Contacts to Laser-Irradiated N-Polar n-Type GaN, H-S Kim, J-H Ryou, R. D. Dupuis, T-S Jang, Y-J Park, S-N Lee, and T-Y Seong, IEEE Electron Device Letters, 30, 319, (2009).

265. Aggregation-Free Process for Functional CdSe/CdS Core/Shell Quantum Dots, J-H Moon, K-S Choi, B-J Kim, K-H Yoon, T-Y Seong, and K-J Woo, Journal of Physical Chemistry C, 113, 7114, (2009).

264. Cellular uptake of folate-conjugated lipophilic superparamagnetic iron oxide nanoparticles, K-J Woo, J-H Moon, K-S Choi, T-Y Seong, K-H Yoon, Journal of Magnetism and Magnetic Materials 321, 1610, (2009).

263. Electrical properties and microstructural characterization of single ZnO nanowire sensor manufactured by FIB, S-W Yoon, J-H Seo, K-H Kim, J-P Ahn, T-Y Seong, K-B Lee, H Kwon, Thin Solid Films, 517, 4003, (2009).

262. Three-Dimensional Nanostructured Carbon Nanotube array/PtRu Nanoparticle Electrodes for Micro-Fuel Cells, H-J Ahn, W-J Moon, T-Y Seong, and D. Wang, Electrochemistry Communications, 11, 635, (2009).

261. Photoluminescence investigation of rare-earth activated GdCa3(GaO)3(BO3)4 phosphors under UV excitation, H-A Kyung, S-H Choi, T-Y Seong, and H-K Jung, Materials Research Bulletin, 44, 789, (2009).

260. Effect of Pt nanostructures on the electrochemical properties of Co3O4 electrodes for micro-electrochemical capacitors, H-J Ahn and T-Y Seong, Journal of alloys and compounds, 478, L8, (2009).

259. Effect of fluorine doping on the properties of ZnO films deposited by radio frequency magnetron sputtering, D. Y. Ku, Y-H Kim, K-S Lee, T-S Lee, B Cheong, T-Y Seong, and W-M Kim, Journal of Electroceramics, 23, 415-421 (2009)

258. Optimum condition for the synthesis of Pt-CeO2 nanocomposite electrodes for thin-film fuel cells, H-J Ahn, J-S Jang, Y-E Sun, and T-Y Seong, Journal of alloys and compounds, 473, L28, (2009).

257. Co-sputtering growth and electro-oxidation properties of Pt-CuO nanocomposites for direct methanol thin film fuel cells, H-J Ahn, H-S Shim, W-B Kim, Y-E Sung, and T-Y Seong, Journal of alloys and compounds, 471, L39, (2009).

256. TiN/Al Ohmic contacts to N-face n-type GaN for high-performance vertical light-emitting diodes, J-W Jeon, T-Y Seong, H-S Kim, and K-K Kim, Applied Physics Letter, 94, 042102 (2009).

255. Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN, V. R. Reddy, S-H Kim, H-G Hong, S-W Yoon, Jae-Pyoung Ahn, and T-Y Seong, J Mater Sci: Mater Electron, 20, 9 (2009).

2008

254. Electrical characteristics of contacts to thin film N-polar n-type GaN, H-S Kim, J-H Ryou, R. D. Dupuis, S-N Lee, Y-J Park, J-W Jeon, and T-Y Seong, Applied Physics Letter, 19, 192106 (2008).

253. Modulated Contrast and Associated Diffracted Intensity of GaPySb1-y Layers Grown Using Organometallic Vapor Phase Epitaxy, T-Y Seong, G. R. Booker, A. G. Norman, F. Glas, G. B. Stringfellow, Journal of the Korean Physical Society, 52, 471 (2008).

252. Low-resistance and transparent Ni-Co solid solution/Au ohmic contacts to p-type GaN for green GaN-based light-emitting diodes, K-W Kim, H-G Hong, J-O Song, J-H Oh, T-Y Seong, Superlattices and Microstructures, 44, 735 (2008).

251. Light extraction enhancement of GaN-based light emitting diodes using MgF2/Al omnidirectional reflectors, H Kim, S-N Lee, Y Park, K-K Kim, J-S Kwak and T-Y Seong, Journal Of Applied Physics, 104, 053111 (2008).

250. Co(OH)(2)-combined carbon-nanotube array electrodes for high-performance micro-electrochemical capacitors , HJ Ahn, WB Kim and T-Y Seong, Electrochemistry Communications, 10, 1284 (2008).

249. Density-of-state effective mass and non-parabolicity parameter of impurity doped ZnO thin films, W M Kim, I H Kim, J H Ko, B Cheong, T S Lee, K S Lee, D Kim and T-Y Seong, Journal of Physics D: Applied Physics, 41, 195409 (2008).

248. Ordered domain structures of nitrogen-doped GaInP layers grown by organometallic vapor phase epitaxy, B-J Kim, Y-W Ok, T-Y Seong, D. C. Chapman, G. B. Stringfellow, Journal of Materials Science: Materials in Electronics, 19, 1092 (2008).

247. Metallization contacts to nonpolar a-plane n-type GaN, H Kim, S-N Lee, Y Park, J S Kwak , T-Y Seong, Appl. Phys. Lett. 93, 032105 (2008).

246. Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures, H Kim, S-N Lee, Y Park, K-K Kim, J.S Kwak, T-Y Seong, Optics Letters, 33, 1273 (2008).

245. High-efficiency GaN-based light-emitting diodes fabricated with metallic hybrid reflectors, H Kim, S-N Lee, Y Park, T-Y Seong, IEEE Electron Device Letters. 29, 582 (2008).

244. Crystalline Ag nanocluster-incorporated RuO2 as an electrode material for thin-film micropseudocapacitors, H-J Ahn, Y-E Sung, W.B. Kim, T-Y Seong, Electrochem. Sold-State Lett. 11, A112 (2008).

243. Possible Ohmic mechanism of Ag/indium tin oxide p-type contacts for high-brightness GaN-based LEDs, J-O Song, H-G Hong, J-W Jeon, J-I Sohn, J-S Jang, T-Y Seong, Electrochem. Sold-State Lett. 11, H36 (2008).

242. Modulated structures and associated diffracted intensity of GaPSb layers grown by OMVPE, T-Y Seong, G. R. Booker, A. G. Norman, G. B Stringfellow, J. Kor. Phys. Soc. 52, 471 (2008).

241. Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p-contacts, H Kim, J Cho, Y Park, T-Y Seong, Appl. Phys. Lett. 92, 092115 (2008).

2007

240. Formation of low-resistance and transparent ITO ohmic contact for high-brightness GaN-based LEDs using a Sn-Ag interlayer, J O Song, K-K Kim, H. Kim, Y-H Kim, H-G Hong, H Na, T-Y Seong, Mater. Sci. Semicond. Proc. 10, 211 (2007).

239. Electrochromism of Sn-modified WO3 electrodes prepared from sol-gel method, H-J Ahn , H-S Shim, Y-E Sung , T-Y Seong, W B Kim, Electrochem. Sold-State Lett. 10(12), E27 (2007).

238. Enhanced light output of GaN-based LEDs by using omnidirectional sidewall reflectors, H Kim, K H Baik, J Cho, K-K Kim, S-N Lee, C Sone, Y Park, T-Y Seong, Photon. Technol. Lett. 19(17-20): 1562 (2007).

237. Formation mechanisms of low-resistance and thermally stable Pd/Ni/Pd/Ru ohmic contacts to Mg-doped AlGaN, J-S Jang, T-Y Seong, S-R Jeon, Appl. Phys. Lett. 91, 092129 (2007).

236. Consideration of actual current-spreading length of GaN-based light emitting diodes for high-efficiency design, H Kim, J Cho, J W Lee, S Yoon, H Kim, C Sone, Y Park, and T-Y Seong, IEEE J. Quantum Electron. 43, 625 (2007).

235. Effect of a Mo interlayer on the electrical properties of Ni-silicided n+/p diode and n+ poly-Si gate electrode, Y-W Ok, D Kim, C-J Choi, S Baek, H Yang, T-Y Seong, J. Electrochem. Soc. 154, H822 (2007).

234. Thickness effect of a Ge interlayer on the formation of nickel silicides, C-J Choi , S-Y Chang , S-J Lee , Y-W Ok, T-Y Seong, J. Electrochem. Soc. 154, H759 (2007).

233. High transmittance NiSc/Ag/ITO p-type ohmic electrode for near-UV GaN-based LEDs, H-G Hong, H Na, T-Y Seong, T. Lee, J-O Song, K-K Kim, J. Korea Phys. Soc. 51, 159 (2007).

232. Effect of different metal deposition methods on the growth behaviors of CNTs, J I Sohn, Y-W Ok, T-Y Seong and, S Lee, J. Appl. Phys. 102, 014301 (2007).

231. Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry, H Kim, K-K Kim, K-K Choi, H Kim, K H Baik, J Cho, J-O Song, C Sone, Y Park, T-Y Seong, Appl. Phys. Lett. 91, 023510 (2007).

230. In/ITO p-type electrode for high-brightness GaN-based LEDs, J O Song, K-K Kim, H Kim, H-G Hong, H Na, and T-Y Seong, Electrochem. Sold-State Lett. 10, H270 (2007).

229. Formation of Sb-doped SnO2 p-type ohmic contact for near-UV GaN-based LEDs by using a Cu-doped indium oxide interlayer, H-G Hong, J-O Song, H Na, H Kim, K-K Kim, T-Y Seong, Electrochem. Sold-State Lett. 10, H254 (2007).

228. Electrical and optical properties of a-Si/c-Si heterojunction solar cells with passivated interface by patterned SiO2, Y-W Ok, T-Y Seong, D Kim, S-K Kim, J C Lee, K H Yoon, Solar Energy Mater. & Solar Cells 91, 1366 (2007).

227. Enhancement of the light output of GaN-based LEDs with surface-patterned ITO electrodes by maskless wet-etching, D-S Leem, T. Lee, T-Y Seong, Sold-State Electron. 51, 793 (2007).

226. Pt-embedded MoO3 Electrodes for rechargeable lithium batteries, Y-S Kim, H-J Ahn, H-S Shim, S H Nam, T-Y Seong, and W B Kim, Electrochem. Sold-State Lett. 10, A180 (2007).

225. Enhanced electrical and optical properties of Ag ohmic contacts for GaN-based FCLEDs by an AgAl alloy capping layer, Y. T. Hwang, H.-G. Hong, T-Y Seong, D-S Leem, T Lee, K-K Kim, J-O Song, Y Park, Mater. Sci. Semicond. Proc. 10, 14 (2007).

224. Enhanced light extraction in GaN-based LEDs with textured n-type layers, H. Kim, J. Cho, J. W. Lee, S.o Yoon, H. Kim, C. Sone, Y.o Park, T.-Y. Seong, Appl. Phys. Lett. 90, 161110 (2007).

223. Recovery of dry etch-induced damage of nano-patterned GaN-based light-emitting diodes by rapid-thermal-annealing, Hyun-Gi Hong, S.-S. Kim, D.-Y. Kim, T Lee, K-K Kim, June-O. Song, J. H. Cho, and T-Y Seong, Phys. Stat. Sol.(a) 204, No. 3, 881 (2007).

222. High-reflectance and thermally stable AgCu alloy p-type reflectors for GaN-based light emitting diodes, H S Kim, K H Baik, J Cho, J W Lee, S Yoon, H Kim, S-N Lee, C Sone, Y Park, and T-Y Seong, IEEE Photonics Technol. Lett. 19, 336 (2007).

221. Electronic transport mechanism for nonalloyed Ti-Based Ohmic contacts to strained n-AlGaN/GaN heterostructure, J-S Jang, T-Y Seong, and S-R Jeon, Electrochem. Sold-State Lett. 10, H120 (2007).

220. Measurements of current spreading length and design of GaN-based light emitting diodes, H Kim, J Cho, J W Lee, S Yoon, H. Kim, C Sone, Y Park, T-Y Seong, Appl. Phys. Lett. 90, 063510 (2007).

219. Low-resistance and thermally stable indium tin oxide ohmic contacts on strained p-In0.15Ga0.85N/p-GaN layer, J-S Jang, T-Y Seong, J Appl. Phys. 101, 013711 (2007).

2006

218. Nano-particle embedded p-type electrodes for GaN-based flip-chip LEDs, J. S. Kwak, J.-O. Song, T.-Y.Seong, B. I. Kim, J. Cho, C. Sone, Y. Park, J. Nanosci Nanotechnol. 6, 3547 (2006).

217. Formation and characterization of Cu-Si nanocomposite electrodes for rechargeable Li batteries, H-J Ahn, Y-S Kim, Y E Sung, T-Y Seong, W B Kim, J. Power Source 163, 211 (2006).

216. Formation mechanism of cerium oxide-doped indium oxide/Ag Ohmic contacts on p-type GaN, D-S Leem, T-W Kim, T Lee, J-S Jang, Y-W Ok, T-Y Seong, Appl. Phys. Lett. 89, 262115 (2006).

215. Ni implantation-induced enhancement of the crystallisation of amorphous Si, Y.-W. Ok, T.-Y. Seong, C.-J. Choi and K. N. Tu, J Mater Sci: Mater Electron. 17, 979 (2006).

214. Characteristics of Hydrogen Storage Alloy p-GaN Ohmic Contacts for InGaN LEDs, S. W. Chae, J. S. Kwak, S. K. Yoon, M. Y. Kim, J.-O Song, T. Y. Seong, T. G. Kim, J. Kor. Phys. Soc. 49, 899 (2006).

213. Electronic transport mechanisms of nonalloyed Ti-based ohmic contacts on n-AlGaN, J-S Jang, T-Y Seong, S-R Jeon, J. Appl. Phys. 100, 046106 (2006).

212. Electrical properties of nonalloyed Ni/Au contacts to KrF excimer laser-irradiated p-type GaN, M-S Oh, J-S Jang, S Park, T-Y Seong, J Mater Sci: Mater Electron 17, 831(2006).

211. Ir/Ag reflector for high-performance GaN-based UV LEDs, K-Y Ban, H-G Hong, D-Y Noh, J I Sohn, D.-J. Kang, and T-Y Seong, Mater. Sci. Eng. B 133, 26 (2006).

210. Electrochemical and structural properties of MoO-VO nanocomposite thin film electrodes for lithium rechargeable batteries, Y-S Kim, H-J Ahn, H-S Shim, T-Y Seong, Solid State Ionics, 177, 1323 (2006).

209. Effects of oxygen partial pressure on the electrical and optical properties of pulsed-laser-deposited Sb-doped SnO films, H-G Hong, J-O Song, S-H Kim, and T-Y Seong, J. Electrochem. Soc., 153, G922 (2006).

208. Low turn-on voltage and series resistance of polarization-induced InGaN-GaN LEDs by using p-InGaN/p-GaN superlattice, J-S Jang and T-Y Seong, Photon. Technol. Lett. 18, 1536 (2006 ).

207. Modified electrochromism of tungsten oxide via Pt nanophases, K-W Park, H-S Shim , T.-Y. Seong, Y-E Sung , Appl. Phys. Lett. 88, 211107 (2006).

206. Schottky barrier characteristics of Pt contacts to n-type InGaN, J-S Jang, D Kim, T-Y Seong, J. Appl. Phys. 99, 073704 (2006).

205. Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes, H-G Hong, S-S Kim, D-Y Kim, T Lee, J-O Song, J H Cho, C Sone, Y Park, and T-Y Seong, Semicon. Sci. Technol. 21, 594 (2006).

204. High-quality tin zinc oxide/Ag ohmic contacts for GaN-based UV flip-chip LEDs, H-G Hong, K-Y Ban, J-O Song, J. Cho, Y. Park, J. S. Kwak, I. T. Ferguson, T-Y Seong, Phys. Stat. Solid. (c) 3, 2133 (2006).

203. Role of nitrogen precursor supplies on InAs quantum dot surfaces in their emission wavelengths, I Suemune, G. Sasikala, H. Kumano, K. Uesugi, Y. Nabetani, T. Matsumoto, J.-T. Maeng, T.-Y. Seong, Jpn J. Appl. Phys. 45, L527 (2006).

202. Formation of low-resistance transparent Ni/Au ohmic contacts to polarization field-induced p-InGaN/GaN superlattice, J-S Jang, S-J Sohn, Donghwan Kim, and T-Y Seong, Semicon. Sci. Technol. 21 L37 (2006).

201. Formation of low resistance nonalloyed ohmic contacts to p-type GaN by KrF laser irradiation, M-S Oh, J-S Jang, S-H Kim, T-Y Seong, Phys. Stat. Solid. (c) 3, 1717 (2006).

200. Low resistance and highly reflective ohmic contacts to p-type GaN using transparent interlayers for flip-chip LEDs, J-O Song, J. S. Kwak, H-G Hong, I. T. Ferguson, T-Y Seong, phys. stat. sol. (c) 3, 2207 (2006)

199. Improvement of the reverse leakage behavior of Ag-based ohmic contacts for GaN-based LEDs using MgZnO interlayer,H-G Hong, J-O Song, T Lee, I. T. Ferguson, J S Kwak and T-Y Seong, Mater. Sci. Eng. B 129, 176 (2006).

198. Enhancement of the light output of GaN-based UV LEDs by an one-dimensional nano-patterning process, H-G Hong, S-S Kim, D-Y Kim, T Lee, J-O Song, J. H. Cho C. Sone, Y. Park, and T-Y Seong, Appl. Phys. Lett. 88, 103505 (2006).

197. Electrochemical capacitors fabricated with carbon nanotubes grown within the pores of anodized aluminum oxide templates, H-J Ahn, J I Sohn, Y-S Kim, H-S Shim, W B Kim, T-Y Seong, Electrochem. Comm. 8, 513 (2006).

196. Field emission from Ni-disilicide nanowires formed using Ni implantation coupled with a laser annealing process, Y-W Ok, T-Y Seong, C-J Choi, and K. N. Tu, Appl. Phys. Lett. 88, 043106 (2006).

195. Improvement of the ohmic behaviour of Pd contacts to p-type GaN using an Ag interlayer, J-O Song, S. Kwak, T-Y Seong, Semicond. Sci. Technol. 21, L7 (2006).

194. Characteristics of Pt Schottky contacts on hydrogen peroxide treated n-type ZnO (0001) layers, S-H Kim, H-K Kim and T-Y Seong, Superlattices and microstructures 39, 211 (2006).

2005

193. Improvement of the electrical performance of near UV GaN-based LEDs using Ni nanodots, J-O Song, H Kang, and I. T. Ferguson, S-P Jung, H. P. Lee, H-G Hong and T-Y Seong, Solid State Electron. 49, 1986 (2005).

192. Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering, K-K Kim, H Tampo, J-O Song, T-Y Seong, S-J Park, J-M Lee, S-W Kim, S Fujita, S Niki, Jpan. J. Appl. Phys. 44, 4776 (2005)

191. Light output enhancement of GaN-based LEDs by using hole-patterned transparent indium tin oxide electrodes, D-S Leem, J Cho, C Sone and Y Park, T-Y Seong, J. Appl. Phys. 98, 076107 (2005).

190. Fabrication of high-density arrays of individually-isolated nanocapacitors using anodic aluminum oxide templates and carbon nanotubes, J I Sohn, Y-S Kim, C Nam, B. K. Cho, T-Y Seong, S Lee, Appl. Phys. Lett. 87, 123115 (2005).

189. Growth of nominally undoped p-type ZnO by pulsed laser deposition, M-S Oh, S-H Kim, T-Y Seong, Appl. Phys. Lett. 87, 122103 (2005).

188. Highly reflective and low resistance ITO/Ag ohmic contacts to p-type GaN for flip-chip LEDs, W-K Hong, J-O Song, H-G Hong, K-Y Ban, T Lee, J. S. Kwak, Y. Park, and T-Y Seong, Electrochem. Sol-State Lett. 8, G320 (2005).

187. Formation of low resistance nonalloyed Ti/Au ohmic contacts to n-type ZnO by KrF excimer laser irradiation, M-S Oh, S-H Kim, D-K Hwang, S-J Park, T-Y Seong, Electrochem. Sol-State Lett. 8, G317 (2005).

186. Formation of high-quality Ag-based ohmic contact to p-type GaN for UV LEDs using a tin zinc oxide interlayer, H-G Hong, W-K Hong, K-Y Ban, T Lee, T-Y Seong, J-O Song, J S Kwak, Electrochem. Sol-State Lett. 8, G280 (2005).

185. Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots, I-K Park, M-K Kwon, S-H Baek, Y-W Ok, T-Y Seong, and S-J Park, Y-S Kim, Y-T Moon, and D-J Kim, Appl. Phys. Lett. 87, 061906 (2005).

184. Use of an indium zinc oxide interlayer for forming Ag-based ohmic contacts to p-type GaN for UV LEDs, K-Y Ban, H-G Hong, D Y Noh, T-Y Seong, J-O Song, D Kim, Semicond. Sci. Technol. 20, 921 (2005).

183. Zn/Au ohmic contacts on n-type ZnO epitaxial layers for light-emitting devices, S-H Kim, S-W Jeong, D-K Hwang, S-J Park and T-Y Seong, Electrochem. Sol-State Lett. 8, G198 (2005).

182. Improvement of the light output of InGaN-based LEDs using Cu-doped indium oxide/indium tin oxide p-type electrodes, J-O Song, S. Kwak, Y. Park, and T-Y Seong, Appl. Phys. Lett. 86, 213505 (2005).

181. Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes, H-K Kim, D.-G. Kim, K.-S. Lee, M.-S. Huh, S. H. Jeong, K. I. Kim, , T-Y Seong, Appl. Phys. Lett. 86, 183503 (2005).

180. Low-resistance and reflective Zn/Rh contacts to p-type GaN for flip-chip light-emitting diodes, J-O Song, W-K Hong, W-G Hong, K-K Kim, and T-Y Seong, Electrochem. Sol.-State Lett. 8, G227 (2005).

179. Synthesis and characterization of NiO-Ta₂O₅ nanocomposite electrode for electrochromic devices, H-J Ahn, H-S Shim, Y-S Kim, C-Y Kim, T-Y Seong, Electrochemistry Communications, 7, 567 (2005).

178. Pt/indium tin oxide ohmic contacts to arsenic-doped p-type ZnO layers, S-H Kim, J-T Maeng, C-J Choi , J H Leem, M S Han and T-Y Seong, Electrochem. Sol-State Lett. 8, G167 (2005).

177. Formation of high-quality ohmic contacts to p-GaN for flip-chip light-emitting diodes using Ag/TiN_x/Al scheme, D-S Leem, J-T Maeng, D-Y Lee, and T-Y Seong, Electrochem. Sol-State Lett. 8, G150 (2005).

176. Visualization of methanol concentration using the electrochromism of nickel oxide, H-S Shim, H-J Ahn, T-Y Seong, K.-W. Park, Y E Sung, Electrochem. Solid-State Lett. 8, A277 (2005).

175. Resonance-tunneling-assisted emission enhancement in green light-emitting diodes with nanocraters formed in InGaN/GaN QW active layers, J H Song, G. H Song, J W. Lee, Y-W Ok, T-Y Seong, O Laboutin, P Deluca, H. K. Choi, Appl. Phys. Lett. 86, 132102 (2005).

174. Low-resistance Al-based reflectors for high-power GaN-based flip-chip light-emitting diodes, J-O Song, W-G Hong, J. S. Kwak, Y. Park, T-Y Seong, Appl. Phys. Lett. 86, 133503 (2005).

173. High electron concentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapid-thermal annealing, K,-K. Kim, S. Niki, J.Y.Oh, J.O.Song, T.Y.Seong, .S.-J. Park, S. Fujita, S.-W. Kim, J. Appl. Phys. 97, 066103 (2005).

172. High transparency of Ag/Zn-Ni solid-solution ohmic contacts for GaN-based ultraviolet light-emitting diodes, D-S Leem, J-O Song, W-K Hong, J-T Maeng, J. S. Kwak, Y. Park T-Y Seong, Appl. Phys. Lett. 86, 102102 (2005).

171. Cu-doped indium oxide/Ag ohmic contacts for high-power flip-chip light-emitting diodes, J-O Song, J S Kwak, T-Y Seong, Appl. Phys. Lett. 86, 062103 (2005).

170. Ohmic and degradation mechanisms of Ag contacts on p-type GaN, J-O Song, J S Kwak, Y. Park, T-Y Seong, Appl. Phys Lett. 86, 062104 (2005).

169. Effect of hydrogen peroxide treatment on the characteristics of Pt Schottky contact on n-type ZnO, S-H Kim, H-K Kim and T-Y Seong, Appl. Phys. Lett. 86, 102102 (2005).

168. Use of Sn-Si nanocomposite electrodes for Li rechargeable batteries, H-J Ahn, Y-S Kim, K-W Park, and T-Y Seong, Chem. Comm. 1, 43 (2005).

167. Improvement of the electrochemical properties of SnO2 electrodes for lithium rechargeable battery using protective Ta2O5 thin films, H-J Ahn, Y-S Kim, H-S Shim, C-Y Kim, T-Y Seong, Solid-State Ionics, 176, 699 (2005).

166. Improvement of the luminous intensity of LEDs by using highly transparent Ag/ITO p-type ohmic contacts, J-O Song, D-S Leem, J S Kwak, Y. Park, S. W. Chae, T-Y Seong, Photon. Technol. Lett. 17, 291 (2005).

165. Inductively coupled plasma reactive ion etching of ZrO2:H solid electrolyte film in BCl3-based plasmas, H-K Kim, J. W. Bae, I Adesida, T Kim, T-Y Seong, Y S Yoon, J. Electrochem. Soc. 152, A922 (2005).

164. Flip-chip light emitting diodes with low-resistance and reflective Ni/Rh and Ni/Au/Rh contacts, J-W Park, J-O Song, D-S Leem, T-Y Seong, Electrochem. Solid-State Lett. 8, G17 (2005).

163. Optical properties of SiO2/nanocrystalline-Si multilayers studied using spectroscopic ellipsometry, K-J Lee, T-D Kang, H Lee, S H Hong, S-H Choi, T-Y Seong, K J Kim, and D W Moon, Thin Sol. Films 476, 196 (2005).

162. Thermally stable and low resistance Re/Ti/Au ohmic contacts to n-ZnO, S-H Kim, K-K Kim, S-J Park and T-Y Seong, J. Electrochem. Soc. 152, G169 (2005).

161. Electrical characteristics of Pt Schottky contacts on sulfide-treated n-type ZnO, S-H Kim, H-K Kim, T-Y Seong, Appl. Phys. Lett. 86, 022101 (2005).

160.Characteristics of RuO2-SnO2 nanocrystallines embedded amorphous electrode for thin film micro-supercapacitors, H-K Kim, S-H Choi, Y S Yoon, S-Y Chang, Y-W Ok, and T-Y Seong, Thin Sold Films 475, 54 (2005).

159. Formation of thermally stable low-resistance Ti/W/Au ohmic contacts on n-type GaN, V. R. Reddy, S.-H. Kim and T.-Y. Seong, Appl. Phys. A 81, 561 (2005).

158. Low resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodes, J-R Lee, S-I Na, J-H Jeong, S-N Lee, J-S Jang, S-H Lee, J-J Jung, J-O Song, T-Y Seong, and S-J Park, J. Electrochem. Soc. 152, G92 (2005).

2004

157. Highly transparent Ag/SnO2 ohmic contact to p-type GaN for UVLEDs, J-O Song and T-Y Seong, Appl. Phys. Lett. 85, 6374 (2004).

156. Nitrogen surfactant effects in GaInP, D. C. Chapman, G. B. Stringfellow, A. Bell, F. A. Ponce, J. W. Lee, T. Y. Seong, S.-I. Shibakawa, and A. Sasaki, J. Appl. Phys. 96, 7229 (2004).

155. Quantum confinement effect of Si nanocrystals in situgrown in silicon nitride films, T-Y Kim, N-M Park, K-H Kim, G Y Sung, Y-W Ok, T-Y Seong, C-J Choi, Appl. Phys. Lett. 85, 5355 (2004).

154. Flip-chip light emitting diodes with low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts, D-S Leem, J-O Song, J. S. Kwak, J. Cho, H. Kim, O. H. Nam, Y. Park, and T-Y Seong, Phys. Stat. Sol. (a) 201, 2823 (2004).

153. Nanodot addition effect on the electrical properties of Ni contacts to p-type GaN, J I Sohn, J-O Song, D-S Leem, S Lee, and T-Y Seong, Phys. Sol. Stat.(c) 1(10), 2524 (2004).

152. Low resistance and reflective MIO/Ag ohmic contacts for flip-chip light emitting diodes, J O Song, D-S Leem, J S Kwak, O H Nam, Y Park, and T-Y Seong, Photon. Technol. Lett. 16, 1450 (2004).

151. The use of nitrogen to disorder GaInP, D. C. Chapman, L. W. Rieth, and G. B. Stringfellow, J. W. Lee and T. Y. Seong, J. Appl. Phys. 95, 6145 (2004).

150. Formation of thermally stable Ni monosilicide using an inductively coupled plasma process, Y-W Ok, C-J Choi, J-T Maeng, T-Y Seong, J. Electron. Mater. 33, 916 (2004).

149. Low resistance and transparent ohmic contacts to p-type GaN using Zn-Ni solid solution/Au scheme, J-O Song, D-S Leem, T-Y Seong, Appl. Phys. Lett. 84, 4663 (2004).

148. High quality Cu-Ni solid solution/Ag ohmic contacts for flip-chip LEDs, D-S Leem, J O Song, J S Kwak, O H Nam, Y Park, and T-Y Seong, Electrochem. Sol-State Lett. 7, G210 (2004).

147. High Low resistance and highly reflective Sb-doped SnO2/Ag ohmic contacts to p-type GaN for flip-chip light emitting diodes, D-S Leem, J-O Song, and H-G Hong J. S. Kwak, Y. Park, T-Y Seong, Electrochem. Solid-State Lett. 7, G219 (2004).

146. Formation of non-alloyed low resistance Ni/Au contacts to p-GaN using Au nano-dots, J I Sohn, J-O Song, D-S Leem, S Lee, and T-Y Seong, Electrochem. Solid-State Lett. 7, G179 (2004).

145. GaN-based light-emitting diodes with Ni-Mg solid solution/Au p-type ohmic contact, J-O Song, D-S Leem, S-H Kim, J S Kwak, and T-Y Seong, Solid State Electronics 48, 1597 (2004).

144. Electrical properties of thermally stable Pt/Re/Au ohmic contacts to p-type GaN, V. R Reddy, S-H Kim, J-O Song and T-Y Seong, Solid State Electronics 48, 1563 (2004).

143. Interfacial reaction effect on the ohmic properties of a Pt/Pd/Au contact on p-type GaN, H-K Kim, I. Adesida, and T-Y Seong, J. Vac. Sci. Technol. A 22, 1101 (2004).

142. Fabrication of ZnO QDs embedded in an amorphous oxide layer, K-K Kim, N. Koguchi, Y-W Ok, T-Y Seong, and S-J Park, Appl. Phys. Lett. 84, 3810 (2004).

141. Improvement of the thermal stability of Ni-silicided SiGe layers by using a Mo interlayer, Y-W Ok, S-H Kim, Y-J Song, K-H Shim, and T-Y Seong, J. Vac. Sci Technol. B 22, 1088 (2004).

140. Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN, H-K Kim, T-Y Seong, I Adesida, C W Tang, and K M Lau, Appl. Phys. Lett. 84, 1710 (2004).

139. Novel Nickel-silicidation process using hydrogen implantation, C-J Choi, S-A Song, Y-W Ok, and T-Y Seong, Electron. Lett. 40, 391 (2004).

138. Low resistance Ni-Zn solid solution/Pd Ohmic contacts to p-type GaN, J-O Song, D-S Leem, and T-Y Seong, Semicond. Sci. Technol. 19, 669 (2004).

137. Low resistance and transparent Ni-La solid solution/Au ohmic contacts to p-type GaN, J-O Song, D-S Leem, J S Kwak, S. N. Lee, O. H. Nam, Y. Park and T-Y Seong, Appl. Phys. Lett. 84, 1504 (2004).

136. Epitaxial ZnO growth and p-type doping with MOMBE, I. Suemune, ABM. Almamun Ashrafi, M. Ebihara, M. Kurimoto, H. Kumano, T.-Y. Seong, B.-J. Kim, and Y.-W. Ok, Phys. Stat. Sol. 241, 640 (2004).

135. Effects of Br and Cl on OMVPE growth and ordering in GaInP, A. D. Howard, L. Rieth, D. C. Chapman, R. R. Wixom, G. B Stringfellow, B.-J. Kim, and T.-Y. Seong, J. Appl. Phys. 95, 2319 (2004).

134. Electrical and structural properties of Ti/W/Au ohmic contacts on n-type GaN, V. R. Reddy and T.-Y. Seong, Semicond. Sci. Technol. 19, 975 (2004).

133. Electrical and structural properties of low resistance Ti/Al/Re/Au ohmic contacts to n-type GaN, V R Reddy, S-H Kim, T-Y Seong, J. Electron Mater. 33, 395 (2004).

132. Study of the electrical and structural characteristics of Al/Pt ohmic contact on n-ZnO epitaxil layer, H-K Kim, I Adesida, K-K Kim, S-J Park, and T-Y Seong, J. Electrochem. Soc. 151, G223 (2004).

131. Low resistance and transparent Ni-Mg solid solution/Pt Ohmic contacts to p-GaN, D-S Leem, J-O Song, S-H Kim, and T-Y Seong,Electrochem. Solid-State Lett. 7, G65 (2004).

130.Mechanism of nonalloyed Al ohmic contacts to n-type ZnO:Al epitaxial layer, H-K Kim, T-Y Seong, K-K Kim, S-J Park, Y S Yoon, and I. Adesida, Jpn J. Appl. Phys. 43, 976 (2004).

129. Characteristics of rapid-thermal-annealed LiNiCoO cathode films for all- solid-state rechargeable thin film microbatteries, H-K Kim, T-Y Seong, and Y S Yoon, Thin Solid Films 447-448, 619 (2004).

128. High rate inductively-coupled-plasma etching of ZnO in BCl3 plasma and effect of BCl3 Plasma treatment on Ti/Au ohmic contacts for ZnO, H-K Kim, J W Bae, K-K Kim, S-J Park, T-Y seong, and I Adesida, Thin Solid Films 447-448, 90 (2004).
127. Structural properties of nickel silicided SiGe (001) layers, Y-W Ok, S-H Kim, Y-J Song, K-H Shim, T-Y Seong, Semicond. Sci. Technol., 19, 285 (2004).

2003

126. Low resistance and highly reflective Zn-Ni solid solution/Ag ohmic contacts for flip-chip light emitting diodes, J-O Song, D-S Leem, J. S. Kwak, O. H. Nam, Y. Park, and T-Y Seong, Appl. Phys. Lett. 83, 4990 (2003).

125. Formation of low resistance and transparent Ohmic contacts to p-GaN using Ni-Mg solid solutions, J-O Song, D-S Leem, and T-Y Seong,Appl. Phys. Lett. 83, 3513 (2003).

124. Growth of crack-free high-qaulity GaN on Si(111) using a low temp AlN interlayer; Observation of tilted domain structures in the AlN interlayer, M. H. Kim, Y. G. Do, H. C. Kang, C. J. Choi, D. Y. Noh, T. Y. Seong, S. J. Park, Phys. Stat. Sol.(c) 2150 (2003).

123. GaNAs as Strain Compensating Layer for 1.55_m Light Emission from InAs Quantum Dots, S Ganapathy, X Q Zhabg, I. Suemune, K Uesugi, H. Kumano, B. J. Kim, T-Y Seong, Jpn Appl. Phys. 42, 5598 (2003).

122. High-quality nonalloyed Rh-based ohmic contacts to p-GaN, J. O Song, D.-S. Leem, J. S. Kwak, O. H. Nam, Y. Park, T.-Y. Seong, Appl. Phys. Lett. 83, 2372 (2003).

121. Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer, H-K Kim, K-K Kim, S-J Park, T-Y Seong, I Adesida, J. Appl. Phys. 94, 4225 (2003).

120. Formation of nickel disilicide using Ni implantation and rapid thermal annealing, C-J Choi, S-Y Chang, Y-W Ok, T-Y Seong, H Gan. G. Z. Pan, and K N Tu, J. Electron. Mater. 32, 1 (2003).

119. Formation of V-based Ohmic contacts to n-GaN, J O Song, S-H Kim, J S Kwak, and T-Y Seong, Appl. Phys. Lett. 83, 1154 (2003).

118. Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN, J O Song, K-K Kim, S-J Park, and T-Y Seong, Appl. Phys. Lett. 83, 479 (2003).

117. Inductively coupled plasma reactive ion etching of ZnO using BCl3-based plasmas, H-K Kim, J.-W. Bae, I. Adesida, K.-K. Kim and T.-Y. Seong, J. Vac Sci Technol B 21, 1273 (2003).

116. Effect of Mo interlayer in the formation of nickel silicide, Y-W Ok, C-J Choi and T-Y Seong, J. Electrochem. Soc., 150, G385 (2003).

115. III-V-N-related quantum structures for 1.5mm emission, I. Suemune, K. Uesugi, S. Ganapathy, X. Zhang, M. Kurimoto, B.J. Kim, T.Y. Seong, H. Machid and N. Shimoyam, IEE Proc.-Optoelectron., 150, 52 (2003).

114. High rate dry etching of ZnO using BCl3/CH4/H2 plasma, J W Bae, C-H Jeong, H-K Kim, T-Y Seong, K-K Kim, S-J Park, I. Adesida, and G Y Yoem, Jpn. J. Appl. Phys. 42, 535 (2003).

113. Low-resistance and thermally stable Pd/Re ohmic contacts to p-type GaN, V. R Reddy, S-H Kim, J-O Song and T-Y Seong, Semicond. Sci. Technol. 18, 541 (2003).

112. All solid-state rechargeable thin film micro-supercapacitor fabricated by tungsten co-sputtered ruthenium oxide electrodes, H-K Kim, S-H Cho, T-Y Seong, and Y S Yoon, J. Vac. Sci. Technol. B. 21, 949 (2003).

111. Structural properties of CdO layers grown on (001) GaAs substrates by MOMBE, B-J Kim, Y-W Ok, T-Y Seong, A. B. M. Ashrafi, H Kumano, I. Suemune, J. Cryst. Growth 252/1-3, 219 (2003).

110. Structural study of amorphous vanadium oxide films for thin film microbattery, H-K Kim, T-Y Seong and Y S Yoon, J. Vac. Sci. Technol. B. 21, 754 (2003).

2002

109. A Study of Stress-Induced p+/n Silicided Junction Leakage Fail and Optimized Process Conditions for sub-0.15 mm CMOS Technology, J. H. Lee, H. D. Lee, K. M. Lee, C. J. Choi, and T. Y. Seong, IEEE Trans. on Electron Dev. 49, 1985 (2002).

108. Effects of surface treatment on the electrical properties of Ohmic contacts to (In)GaN for high performance optical devices, J-S Jang, S-J Park, and T-Y Seong, Phys. Stat. Sol. (a) 194, 576 (2002).

107. Fabrication of all solid-state thin film battery using a rapid-thermal-annealed LiNiO2 cathode, H-K Kim, T-Y Seong, and Y-S Yoon, Electrochem. Solid-State Lett. 5, A252 (2002).

106. Effect of Pt co-sputtering on characteristics of amorphous vanadium oxide films, H-K Kim, T-Y Seong, and Y S Yoon, J. Power Sources 112, 67 (2002).

105. Correlation between the microstructures and cycling performance of RuO2 electrodes for TFSCs, H-K Kim, T-Y Seong, J H Lim, W I Cho and Y S Yoon, J. Vac. Sci. Technol. B 20, 1827 (2002).

104. Heteroepitaxial growth behavior of SrRuO3/SrTiO3(001) by pulsed laser deposition, S. S. Kim, T.-Y. Seong, H. S. Kim, and J. H. Je, J. Appl. Phys. 92, 4820 (2002).

103. Low resistance and thermally stable Pd/Ru contacts to p-type GaN, J-S Jang, S-J Park, T-Y Seong, I.T. Ferguson, J. Electron. Mater. 31, 903 (2002).

102. Effect of Fe film thickness and pretreatments on the growth behaviors of carbon nanotubes on Fe-doped Si substrates, J I Sohn, C-J Choi, S. Lee, T-Y Seong, Jpn. J. Appl. Phys. 41, 4731 (2002).

101. Effects of hydrogen implantation on the structural and electrical properties of nickel silicide, C-J Choi, Y-W Ok, S S Hullavarad, T-Y Seong, K-M Lee, J-H Lee, and Y-J Park, J. Electrochem. Soc. 149, G517 (2002).

100. Thermally stable and low resistance Ru ohmic contacts to n-ZnO, H-K Kim, K-K Kim, S-J Park, T-Y Seong, Jpn. J Appl. Phys. 41, L546 (2002).

99. Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH3CSNH2 solution, J O Song, S-J Park, and T-Y Seong, Appl. Phys. Lett.80, (2002) 3128.

98. Growth and structural characterization of III-N-V semiconductor alloys, I Suemune, K Uesugi, and T-Y Seong, Semicond. Sci Technol. 17, 755 (2002).

97. N+/P junction leakage characteristics of Co salicide process for 0.15 μm CMOS devices, K-M Lee, C-J Choi, J-H Lee, T-Y Seong, Y-J Park, S-K Hong, J-G Ahn, H-D Lee, IEEE Transactions on Electron Dev. 49, (2002) 937.

96. CdO epitaxial layers grown on (001) GaAs by MOMBE, A Ashrafi, H Kumano, I Suemune, Y W Ok, T-Y Seong, J Crystal Growth 237-239 (2002) 518.

95. Abnormal junction profile of silicided p+/n shallow junctions: A leakage mechanism, C-J Choi, T-Y Seong, K-M Lee, J-H Lee, Y-J Park, H-D Lee, IEEE Electron Dev. Lett. 23 (2002) 188.

94. Rapid thermal annealing effect on the surface of LiNi1-xCoxO2 cathode film for thin film micro battery, H-K Kim, T-Y Seong, W I Cho, and Y S Yoon, J. Power Source 4743 (2002) 5.

93. Effect of a SiO2 capping layer on the electrical properties and morphology of nickel silicides, C-J Choi, Y-W Ok, T-Y Seong, H-D Lee, Jpn J. Appl. Phys. 41 (2002) 1969.

92. Reduction of threading dislocation in InGaN/GaN DH through the introduction of low temperature GaN intermediate layer, D-H Yoon, K-S Lee, J-B Yoo, T-Y Seong, Jpn J. Appl. Phys. 41 (2002) 1253.

91. Effects of annealing on the microstructures and mechanical properties of TiN/AlN multilayer films prepared by IBA deposition, D-G Kim, and T-Y Seong, Y-J baik, Surf. Coat. Technol. 153 (2002) 79

90. Time dependent surfactant effects on growth of GaInP heterostructures by organometallic vapor phase epitaxy, J. K. Shurtleff, R. T. Lee, C. M. Fetzer, G. B. Stringfellow, S. Lee and T. Y. Seong, J. Crystal Growth 234 (2002) 327

2001

89. Enhancement of composion modulation in GaInP epilayers by the addition of surfactants during OMVPE growth, R T Lee, C M Fetzer, S W Jun, D C Chapman, J K Shurtleff, G B Stringfellow, Y W Ok and T-Y Seong, J. Crystal Growth 233 (2001) 490.

88. Occurrence of CuPt-A and CuPt-B ordering in GaInP layers grown by SSMBE, J D Song, Y-W Ok, J M Kim, Y T Lee and T-Y Seong, Appl. Surf. Sci. 183/1-2 (2001) 33

87. Elctrochemical and structural properties of radio frequency sputtered cobalt oxide electrode for thin film supercapacitor, H-K Kim, T-Y Seong, J-H Lim, W I Cho, and Y S Yoon, J. Power Sources 102 (2001) 167.

86. Oxidation behaviour of TiN/AlN multilayer films prepared by the ion-beam assisted deposition, D-G Kim, T-Y Seong, and Y-J Baik, Thin Sol. Films 397 (2001) 203.

85. Lateral compositon modulation in the GaP/InP SPSs grown by SSMBE, J D Song, Y-W Ok, J M Kim, Y T Lee, T-Y Seong, J. Appl. Phys. 90 (2001) 5086.

84. Microstructures and electrochemical properties of Pt-doped amorphous V2O5 cathode films for thin film micro-batteries, H-K Kim, E-J Jeon, Y-W Ok, T-Y Seong, W I Cho, and Y S Yoon, J. Vac. Sci. Technol.A. 19 (2001) 2549.

83. Abnormal junction profile of submicron CMOS devices with Co silicidation and shallow trench isolation processes, C-J Choi, T-Y Seong, K-M Lee, J-H Lee, Y-J Park, and H-D Lee, Elecctrochem. Solid-State Lett. 4 (2001) 88.

82. Single-crystallin rocksalt CdO layers grown on GaAs(001) by MOMBE, A B Almamun Ashrafi, H Kumano, A Ueta, I Suemune, Y-W Ok and T-Y Seong, Appl. Phys. Lett. 79 (2001) 470.

81. Structural properties of GaNAs layers grwon by MOMBE, Y-W Ok, C-J Choi, T-Y Seong, I.Suemune, N.Morooka, K.Uesugi, J. Electron. Matter. 30 (2001) 900.

80. Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2, S.Jeon, C-J Choi, T-Y Seong, H Hwang, Appl. Phys. Lett. 79 (2001) 245.

79. Effect of thermal and hydrogen treatment on In segregation in InGaN/GaN MQWs, Y.T.Moon, D.J.Kim, K.M.Song, C.J.Choi, S.H.Han, T.-Y.Seong, S.-J.Park, J. Appl. Phys. 89 (2001) 6514.

78. Growth behavior of carbon nanotubes grown on Fe-deposited (011) Si substrates, J-I Shon, C-J Choi, S.Lee, and T-Y Seong, Appl. Phys. Lett. 78 (2001) 3130.

77. Growth of high-quality GaN on Si(111) substrate by UVCVD, M.H.Kim, Y.C.Bang, N.M.Park, C.j.Choi, T.-Y.Seong, S.-J.Park, Appl. Phys. Lett. 78 (2001) 2858.

76. Electrical and structural properties of Ti/Au ohmic contacts to n-ZnO by H-K Kim, S-H Han, T-Y Seong, and W-K Choi, J. Electrochem. Soc. 248 (2001) G114.

75. Thermally stable Nb and Nb/Au ohmic contacts to p-GaN, H.-K.Kim, T.-Y.Seong, and C-R Lee, J. Electron. Matter. 30 (2001) 266.

74. Sb enhancement of lateral superlattice formation in GaInP, C.M. Fetzer,R.T. Lee, S.W. Jun, G.G. Stringfellow, S.M. Lee, T-Y Seong, Appl. Phys. Lett. 78 (2001) 1376.

73. Quantum confinement and blue light emission in amorphous silicon quantum daots embedded i silicon nitrides, N.M. Park, C.J. Choi, T.-Y. Seong, S.-J. Park, Phys. Rev. Lett. 86(7) (2001) 1355.

72. Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN, J-S Jang, D-J Kim, S-J Park, and T-Y Seong, J. Electron. Mater. 30 (2001) 94.

2000

71. Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by MOMBE, I. Suemune, N. Morooka, K. Uesugi, Y-W Ok and T-Y Seong, J. Crystal Growth, 221 (2000) 546

70. Structural and optical properties of InGaN/GaN MQWs: the effect of the number of InGaN/GaN pairs, D. J. Kim, Y. T. Moon, K. M. Song, C. J. Choi, Y. W. Ok, T. Y. Seong, S. J. Park, J. Crystal Growth 221 (2000) 368.

69. Relationship between the lateral length and thickness of the platelets in naturally occurring SLS structures, I.T. Ferguson, A.G. Norman, T-Y Seong, J. Appl. Phys. 88 (2000) 5733.

68. Ultrahigh-transparency of Ni/Au ohmic contacts to surface-treated p-GaN, J-S Jang, S-J Park, T-Y Seong, J. Appl. Phys. 88 (2000) 5490.

67. Bi surfactant control of ordering and surface structure in GaInP grown by OMVPE, S. W. Jun, R. T. Lee, C. M. Fetzer, J. K. Shurtleff, G. B. Stringfellow, C. J. Choi and T.-Y. Seong, J. Appl. Phys. 88 (2000) 4429.

66. Low-resistance Ti/Au ohmic contacts to n-type ZnO, H-K Kim, S.H. Han, T-Y Seong, and W. K. Choi, Appl. Phys. Lett. 77 (2000) 1647.

65. Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated p-GaN, J.-S. Jang and T-Y Seong, J. Appl. Phys.88 (2000) 3064

64. Characterization of sub-30 nm p+/n junction formed by plasma ion implantation, S.K. Baek, C. J. Choi, T.-Y. Seong, H. Hwang, H. K. Kim and D. W. Moon, J. Electrochem. Soc. 147 (2000) 3091.

63. Ultrashallow p+/n Junction Formation by Plasma Ion Implantation,S.K.Baek, C.J.Choi, T.-Y.Seong, H.Hwang, D.W.Moon, and H.K.Kim, J. Korean Phys.Soc., 37, 912 (2000).

62. Low resistance and thermally stable Pt/Ru ohmic contacts to p-type GaN, J-S Jang, S-J Park, and T-Y Seong, Phys. Stat. Sol.(a) 180 (2000) 103.

61. Electronic transport mechanisms of Pt contact to p-GaN, J-S Jang and T-Y Seong, Appl. Phys. Lett. 76 (2000) 2742.

60. Metallisation scheme for highly low-resistance, transparent, and thermally-stable ohmic contacts to p-GaN, J-S Jang, S-J Park, and T-Y Seong, Appl. Phys. Lett. 76 (2000) 2898.

59. Heterostructures in GaInP grown using a change in Te doping, Y. Hsu, C.M. Fetzer, G.B. Stringfellow, J.K. Shurtleff, C.J. Choi, and T.-Y. Seong, J. Appl. Phys. 87 (2000) 7776.

58. Surfactant controlled growth of GaInP by OMVPE, R-T Lee, K.Shurtleff, C.M Fetzer, G.B Stringfellow, S.Lee, T-Y Seong, J. Appl. Phys. 87 (2000) 3730.

57. Isoelectronic dopant induced ordering transition in GaInP grown by organometallic vapour phase epitaxy, T-Y Seong, S-M Lee, R-T Lee, and G.B. Stringfellow, Surf. Sci. Lett. 457 (2000) L381.

56. Electrical and structural properties of W ohmic contacts to InGaN, H.-K. Kim, J.-S. Jang, S.-J. Park and T.-Y. Seong, J. Electrochem. Soc. 147 (2000) 1573.

55. Effects of Si doping on ordering and domain structures in GaInP, S-M Lee, T-Y Seong, R-T Lee, and G.B. Stringfellow, Appl. Surf. Sci. 158/3-4 (2000) 223.

54. High quality nonalloyed Pt ohmic contacts to p-type GaN using two-step surface treatment, J-S Jang, S-J Park, and T-Y Seong, MRS Internet J. Nitride semicond. Res. 5S1 (2000) W10.4

53. Investigation of the role of low temperature GaN in p-GaN/InGaN/n-GaN DH LEDs, D-H Youn, S-J Son, Y-J Lee, S-W Hwang, J-J Yang, K-J Lee, J-H Kim, J-Y Jo, J-B Yoo, C-J Choi, T-Y Seong, Jpn J. Appl. Phys. 39 (2000) 2512.

52. TEM study of 2-D dopant profiling in MOSFET test structures and devices, C-J Choi and T-Y Seong, J. Electrochem. Soc. 147 (2000) 1525.

51. The use of surfactant (Sb) to induce triple period ordering in GaInP, C.M. Fetzer, R-T Lee, K. Shurtleff, G.B. Stringfellow, S. Lee, and T.-Y. Seong, Appl. Phys. Lett. 76 (2000) 1440.

50. Effects of Te doping on ordering and APBs in GaInP, C-J Choi, R. Spirydon, T-Y Seong, S.H. Lee, and G.B. Stringfellow, Jpn. J. Appl. Phys. 39 (2000) 402.

49. Growth and characterization of hypothetical zincblende ZnO films on GaAs(001) substrates with ZnS buffer layers, A A Almamun, A Ueta, A Avramescu, H Kumano, I Suemune, Y-W Ok, and T-Y Seong, Appl. Phys. Lett. 76 (2000) 556.

48. Surfactant effects of dopants on ordering in GaInP, R-T Lee, C.Y. Fetzer, K. Shurtleff, Y. Hsu, G.B. Stringfellow, S.-M. Lee, and T-Y. Seong, J. Electron. Mater. 29 (2000) 134

1999 ~

47. Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment, J-S Jang, S-J Park, and T-Y Seong, J. Vac. Sci Technol.B 17 (1999) 2580.

46. Optical and structural studies of phase separation in InGaN films grown by MOCVD, Y.-T. Moon, D.-J. Kim, K.-M. Song, I.-H. Lee, M.-S. Yi, D.-Y. Noh, C.-J. Choi, T-Y Seong and S-J Park. Phys. Stat. Sol.9(b) 216 (1999) 167.

45. Interfacial reaction of Ni/Pt/Au contact scheme to p-type GaN, J-S Jang, S-J Park, and T-Y Seong, J. Electrochem. Soc. 146 (1999) 3425.

44. Step structure and ordering in Zn-doped GaInP, S.H. Lee, C.M. Fetzer, G.B. Stringfellow, C.J. Choi,and T-Y Seong, J. Appl. Phys. 86 (1999) 1982.

43. TEM structural study of Y2O3 films grown on Si (111) by ICB, D.H. Lee, T-Y Seong, M.H. Cho and C.N. Whang, J. Electrochem. Soc. 146 (1999) 3028.

42.Structural study of GaN grown on (001) GaAs by OMVPE, I-T Bae, T-Y Seong, Y.J. Park,and E.K.Kim, J. Electron. Mater. 28 (1999) 873.

41.Growth of cubic GaN by phosphororus-mediated molecular beam epitaxy, Y.Zhao, C. W.Tu, I-T.Bae,and T-Y.Seong, Appl. Phys. Lett. 74 (1999) 3182.

40. Te doping of GaInP: Ordering and step structure, S.H.Lee, C.Y.Fetzer, G.B. Stringfellow, D.H. Lee, and T-Y seong, J. Appl. Phys. 85 (1999) 3590.

39. Structural study of GaN(As,P) layers grown on (0001) GaN by GSMBE,T-Y Seong, I-T Bae, Y. Zhao, and C. Tu, MRS Internet J. Nitride Semicond. Res. 4S1, (1999) G3.11.

38. Low resistance Pt/Ni/Au ohmic contacts to p-type GaN, J-S Jang, I-S Chang, H-K Kim, T-Y Seong, S.H. Lee and S-J Park, Appl. Phys. Lett., 74, (1999) 70.

37. Microstructures of Ga(N,P) layers grown by gas source Mbe,T-Y Seong, I-T Bae, C.-J. Choi, D.Y. Noh, Y. Zhao, and C. Tu, J. Appl.Phys., 85 (1999) 3135.

36. CL of diamond films grown on pretreated Si(001) substrates by MPCVD, D-G Kim, T-Y Seong, Y-J Baik, M.A. Stevens Kalceff, and M.R. Phillips, Dia. Relat. Mater. (1998).

35. Ordering and microstructures of GaNAs layers grown on (0001) GaN substrates by GSMBE, T-Y Seong, I-T Bae, Y. Zhao and C.W.Tu, Electrochem. & Solid-State Lett. 2 (1999) 94.

34. Quantum wells due to ordering in GaInP, Y. Hsu, C.E. Inglefield, J.H. Cho G.B. Stringfellow, M.C. Delong, P.C. Taylor and T-Y. Seong, Appl. Phys. Lett. 73 (1998) 3905

33. Diffuse diffracted features and ordered domain structures in GaInP layers grown by OMVPE, J.J. Yang, R Spirydon, T-Y. Seong, S.H. Lee and G.B. Stringfellow, J. Electron. Mater. (1998) 1117

32. Tetragonal distortion and domain structure of thin Pb(Zr,Ti)O3 films grown on (001) MgO, D.Y. Noh, H.C. Kang, T-Y. Seong, J.H. Je, and H.K. Kim, Appl. Phys. A 66 (1998) 343.

31. Structural investigation of the bias-enhanced nucleation and growth of diamond films by MPCVD, D-G. Kim, T-Y. Seong and Y.-J. Baik, J. Electrochem. Soc. 145 (1998) 2095.

30. Morphology and Defect Structure of GaSb Islands on GaAs Grown by MOVPE, J.H. Kim, T-Y. Seong, N.J. Mason, and P.J. Walker, J. Electron. Mater. 27 (1998) 466.

29. Structural and optical properties of GaxIn1-xP layers grown by CBE, T-Y. Seong, J.J. Yang, J-I. Song, M.I. Yu and P.W. Yu, J. Electron. Mater. 27 (1998) 409.

28. Surface photoabsorption transients and ordering in GaInP, T.C. Hsu, G.B. Stringfellow, J.H. Kim, and T-Y. Seong, J. Appl. Phys., 83 (1998) 3350.

27. Origin of dislocation-related photoluminescence bands in very thin SiGe layers grown on Si substrates, H. Lee, S.H. Choi, and T-Y. Seong, Appl. Phys. Lett. 71 (1997) 3823.

26. Characterisation of unicompositional GaInP2 ordering heterostructures grown by variation of V/III ratio, C. E. Inglefield,M. C. DeLong, P. C. Taylor, Y. S. Chun, I. H. Ho, G. B. Stringfellow, J. H.Kim, and T. Y. Seong, J. Appl. Phys. 82 (1997) 5107.

25. Effects of implanted materials on impurity-induced layer disordering in strained GaInAs/GaInAsP/GaInP/GaAs QW structures, D.J. Jang, J.K. Lee, K.H. Park, H.S. Cho, T-Y. Seong, C-S. Park, and K.E. Pyun, Jpn. J. Appl. Phys., 36 (1997) L1364.

24. Growth of order/disorder heterostructures in GaInP using a variation in the V/III ratio, Y.S. Chun, Y.Hsu, I.H. Ho,T.C. Hsu, H. Murata, G.B. Stringfellow, J.H. Kim, and T-Y. Seong, J. Electron. Mater.,26 (1997) 1250.

23. Structural dependence of mechanical properties of Si incorporated diamond-like carbon films deposited by RF plasma-assisted chemical vapour deposition, K-R. Lee, M-G. Kim, S-J. Cho, K.Y. Eun, and T-Y. Seong, Thin Solid Films, 308-309 (1997) 263.

22. Microstructural studies of BEN and growth of diamond on Si substrates, T-Y. Seong, D.-G. Kim, K-K. Choi, Y.-J. Baik, Appl. Phys. Lett., 70 (1997) 3875.

21. Heterostructures in GaInP grown using a change in V/III ratio, Y.C. Chun,> H. Murata, S.H. Lee, I.H. Ho, T.C.Hsu, G.B. Stringfellow, C.E. Inglefield, M.C. Delong, P.C. Taylor, J.H. Kim,and T-Y. Seong, J. Appl. Phys., 81 (1997) 7778.

20. Effects of V/III ratio on ordering and antiphase boundaries in GanP layers, T-Y. Seong, J-H. Kim, Y.S. Chun, and G.B. Stringfellow, Appl. Phys. Lett., 70 (1997) 3137.

19. Formation of InAs quantum dots on (100) GaAs by CBE, S-J Park, H.T. Lee, J.S. Oh, J.H. Kim, T-Y. Seong, S-B. Kim, J-R. Ro, and E-H. Lee, J. Korean Phys. Soc., 31 (1997) S537.

18. Atomic ordering and phase separation in MBE InAsSb layers, J.H. Kim, T-Y. Seong and G.R. Booker, J. Korean Phys. Soc., 30 (1997) S81.

17. Direct formation of nano-crystalline silicon by electron cyclotron resonance chemical vapour deposition, W.C. Choi, E.K. Kim, S-K. Min, C-Y. Park, J.H. Kim, and T-Y. Seong, Appl. Phys. Lett., 70 (1997) 3014.

16. Ordering and associated domain structures in Zn and Si doped GaInP and GaInAsP layers grown by MOVPE, T-Y. Seong, D.G. Kim, D.J. Jang, and J.H. Lee, Jpn. J. Appl. Phys., 35 (1996) 5607.

15. Naturally formed InAlAs vertical superlattices, S.W. Jun, T-Y. Seong, J.H. Lee and B. Lee, Appl. Phys. Lett., 68 (1996) 3447.

14. Studies of porous silicon emitters, E. Boswell, T-Y. Seong, and P.R. Wilshaw, J. Vac. Sci. Tech. B, 13 (1995) 437.

13. Growth of InAs/GaSb strained layer superlattices. II, G.R. Booker, P.C. Klipstein, M. Lakrimi, S. Lyapin, N.J. Mason, I.J. Murgatroyd, R.J. Nicholas, T-Y. Seong, D. Symons, P.J. Walker, J. Cryst. Growth, 146 (1995) 495.

12. Growth of InAs/GaSb strained layer superlattices.I, G.R. Booker, P.C. Klipstein, M. Lakrimi, S. Lyapin, N.J. Mason,R.J. Nicholas, T-Y. Seong, D. Symons, T.A. Vaughan, P.J. Walker, J.Cryst. Growth, 145 (1994) 778.

11. Mechanisms for CuPt-type ordering in mixed III-V epitaxial layers, B.A. Philips, A.G. Norman, T-Y. Seong, S. Mahajan,G.R. Booker, M. Skowronski, J.P. Harbison,V.G. Keramidas, J. Cryst. Growth,140 (1994) 249.

10. Atomic ordering in MBE InAsySb1-ystrained layer superlattices and homogenous layers, T-Y. Seong, G.R. Booker, A.G.Norman, I.T. Ferguson, Appl. Phys. Lett., 64 (1994) 3593.

9. Atomic ordering and domain structures in MOCVD InGaAs (001) layers, T-Y. Seong, A.G. Norman, G.R. Booker, A.G. Cullis, J.Appl. Phys., 75 (1994) 7852.

8. Optical and transport properties of piezoelectric [111] oriented strained GaInSb/GaSb quantum wells, S.L. Wong, R.W.Martin, M. Lakrimi, R.J. Nicholas, T-Y. Seong, N.J. Mason and P.J. Walker, Phys. Rev. B, 48 (1993) 17885.

7. Improved materials for MOVPE growth of GaSb and InSb, R. Graham, A.C. Jones, N.J. Mason, S.A. Rushworth, A. Salasse,T-Y. Seong, G.R. Booker, L.M. Smith, P.J. Walker, Semicond. Sci. Technol., 8 (1993) 1797.

6. Geometry and interface structure of island nuclei for GaSb buffer layers grown on (001) GaAs by MOVPE, M. Aindow, T-T. Cherng, N.J. Mason, T-Y. Seong, P.J. Walker, J. Cryst. Growth, 133 (1993) 168.

5. TEM and TED structural studies of heteroepitaxial InAsySb1-y MBE layers, T-Y. Seong, A.G. Norman, I.T. Ferguson, G.R. Booker, J. Appl. Phys., 73 (1993) 8227.

4. Structural studies of natural superlattices in GroupIII-V alloy epitaxial layers, A.G. Norman, T-Y. Seong, I.T. Ferguson,G.R. Booker, B.A. Joyce, Semicond. Sci. Technol., 8 (1993) S9.

3. Investigations on the influence of masks on the nature of selective area epitaxy, J. Thompson, A.K. Wood, N. Carr, P.M. Charles, A.J. Moseley, R. Pritchard, B. Hamilton, A. Chew, D.E. Skyes, T-Y. Seong, J. Cryst. Growth, 124 (1992) 227.

2. MBE growth of InAsSb strained layer superlattices. Can nature do it better ? I.T. Ferguson, T-Y. Seong, R.H.Thomas, A.G. Norman, C.C. Phillips, R.A. Stradling, G.R. Booker, B.A. Joyce, Appl. Phys. Lett., 59 (1991) 3324.

1. Effects of heat treatment on precipitation behaviour in Cu-Ni-Si-P alloys, Y.G. Kim, T-Y. Seong, J.H. Han, A.J. Ardell, J. Mater. Sci., 21 (1986) 1357.