Patents

1. Metal film for Ohmic contact and fabrication method thereof, J-S Jang; S-J Park; T-Y Seong, KR20010097906 (A).

2. Method of fabricating an ohmic metal electrode for use in nitride compound semiconductor devices, J-S Jang; T-Y Seong; S-J Park, US6326294 (B1)

3. Metal thin film with ohmic contact for light emit diodes, Ja Sun Jang; H. K. Kim; S. J. Park; T. Y. Seong; H. K. Jang US6169297 (B1), US6008539 (A)

4. Two-step hybrid surface treatment and modification for the formation of high quality ohmic contacts of optoelectronic& electronic Devices), J. S. Jang; T. Y. Seong; S. J. Park, Korea Patent 10-0329280-0000

5. Method for manufacturing a metal thin film of ohmic contact for light emitting diode and laser diode based on ZnO oxide semiconductor), T-Y Seong, H. K. Kim, S. H. Han, W. K. Choi, Korea Patent 10-0366372-0000

6. Method for manufacturing a high quality thin film by post-growth annealing in O ambient), T-Y Seong, H. K. Kim, W. K. Choi, K.K. Kim, B. K. Kim, Korea Patent 10-0403191-0000

7. Fabrication method of cathode film for thin-film battery through rapid thermal annealing method), T-Y Seong, H. K. Kim, W. I. Cho, Y. S Yoon, Korea Patent 10-0454092-0000

8. Fabrication Method of Thermally Stable Nickel mono-silicide Using Hydrogen Implantation), T-Y Seong, C-J Choi, Y.W. Ok, Korea Patent 10-0449895-0000

9. Method of fabricating electrode on GaN-based III-V group compound semiconductor, T-Y Seong, J-S Kwak, J I Sohn, J-O Song, D-S Leem, Korea Patent 출원 10-2004-0020998

10. GaN-based III - V group compound semiconductor light emitting device and method of fabricating the same, T-Y Seong, J-S Kwak, J-O Song, D-S Leem, Korea Patent 출원 10-2004-0020993

11. A low-resistance electrode of compound semiconductor light emitting device and a compound semiconductor light emitting device using the electrode), T-Y Seong, J-S Kwak, H-S Kim, J-O Song, Korea Patent 출원 10-2004-0061429

12. Thin-film electrode and method of manufacturing the same, J-O Song; D-S. Leem; T-Y Seong, Japan, EU, USA, China patents 제JP2004336021(A), EP1475845(A1), CN1622348(A), US2004222524(A1), US2004222524(A1), US6989598 (B2)

13. Anisotropic Dry Etching of ZnO for Optical and Electronic Devices Using BCl3 Based Plasmas), T-Y Seong, H. K. Kim, K.K. Kim, Korea patent 10-0484502-0000

14. Structure for light emitting device, light emitting device using the same and method of fabricating the same), T-Y Seong, Korea patent 출원 10-2005-0086007

15. light emitting device and method of manufacturing the same, T-Y Seong, S-J. Park, K.K. Kim, S-H. Kim, Korea patent 10-0538041-0000

16. Transparent Electrode Film for Ohmic Contact of p-GaN Semiconductor), T-Y Seong, J-O Song, K-K Kim, S-J Park, Korea patent 10-0515652-0000

17. GaN-base III-V group compound semiconductor and p-type electrode for the semiconductor, O. H. Nam; T-Y Seong; J-S Kwak; J-O Song; D-S Leem, Korea patent KR20050118658 (A)

18. Top emitting LED and method of manufacturing thereof, J-S Kwak; T-Y Seong; J-O Song; W-K Hong, Korea patent KR20050063668 (A)

19. Method of fabricating electrode on GaN-based III-V group compound semiconductor, J-S Kwak; T-Y Seong; J I Sohn; J-O Song; D-S Leem, Korea patent KR20050095723 (A)

20. GaN-based III-V group compound semiconductor light emitting device and method of fabricating the same, J-S Kwak; T-Y Seong, J-O Song; D-S Leem, Korea, USA, EU, Japan, China patents KR20050095721(A), EP1580817(A2), EP1580817(A3), US2005212006(A1), JP2005286307(A), CN1674310(A)

21. A low resistance electrode of compound semiconductor light emitting device and a compound semiconductor light emitting device using the electrode, J S Kwak, T-Y Seong;J H Cho, J-O Song, D-S Leem, Korea patent KR20050072521 (A)

22. Flip-chip type light emitting device and method of manufacturing the same, T-Y Seong, J-O Song, D-S Leem, H-G Hong, Korea (USA, Japan, China) patents KR20050051920 (A), US2005121685 (A1), JP2005167237 (A), CN1622349 (A)

23. Light emitting device and method of manufacturing the same, D-S Leem, T-Y Seong, J-O Song, Korea patent KR20050041369 (A)

24. AU, CO, PD, PT, RU, RH, IR, TA, CR, MN, MO, TC, W, RE, FE, SC, TI, SN, GE, SB, AL, ITO, ZNO, J-S Kwak, D-S Leem, O-H Nam, T-Y Seong, J-O Song, Korea (EU, USA) patent KR20050040069 (A), EP1536481 (A2), EP1536481 (A3), US2005087758 (A1), US2005087758 (A1), US7285857 (B2)

25. Light emitting device and method of manufacturing the same, D-S Leem, T-Y Seong, J-O Song, Korea patent KR20050031471 (A)

26. Nitride-based light emitting device and method of fabricating method thereof to improve wire bonding efficiency and yield in packaging LED, T-Y Seong, J-O Song, Korea, EU, USA patents KR20050022242 (A), EP1511091 (A2), EP1511091 (A3), US2005045907 (A1), US2005045907 (A1), US7462877 (B2)

27. Transparent thin film electrode for forming ohmic contact of p-type semiconductor including Ga for embodying high-quality LED and laser diode, D-S LEEM; T-Y SEONG; J-O SONG, Korea, USA, Japan patents KR20050020513 (A), US2005040755 (A1), JP2005072594 (A)

28. Thin film electrode for forming ohmic contact using binary and ternary alloy or solid solution for forming P-type thermo-electric oxide thin film for high-quality GaN-based optical device and fabricating method for breaking Mg-H bond and increasing density of effective carrier around GaN surface, S-H Kim, D-S Leem, T-Y Seong, J-O Song, Korea, USA, Japan patents KR20050007702 (A), US2005006229 (A1), JP2005033212 (A)

29. Electrode layer, light-emitting device provided with the same, and manufacturing method of the electrode layer, J-S KWAK; G.K. NAN; T-Y SEONG; J-O SONG, Japan, EU, USA, China patents JP2005223326 (A), EP1562236 (A2), EP1562236 (A3), US2005167681 (A1), CN1652362 (A)

30. Low-resistance electrode of compound semiconductor light-emitting element, and compound semiconductor light-emitting element using the same, J-S Kwak, T-Y Seong, J-H Cho, J-O Song, D-S Leem, H-S Kim, Japanese (USA, China) patent JP2005197687 (A), US2005145876 (A1), CN1638161 (A)

31. Structure for light emitting device, light emitting device using the same and method of fabricating the same, T-Y Seong, Korea patent 10-2005-0086007

32. Method for forming electrode of compound semiconductordevice), T-Y Seong, J-S Kwak, J-O Song, Korea patent 10-0657909-0000

33. Top emitting light emitting device and method ofmanufacturing thereof), T-Y Seong, J-S Kwak, J-O Song, W-K Hong, Korea patent 10-0601971-0000

34. Flip-chip light emitting device and method of manufacturing thereof, T-Y Seong, J-S Kwak, J-O Song, W-K Hong, Korea patent 10-0574102-0000

35. Top emitting light emitting device and method of manufacturing thereof, T-Y Seong, J-O Song, K-K Kim, W-K Hong, Korea patent 10-0611642-0000

36. Flip-chip light emitting device and method of manufacturing thereof), T-Y Seong, J-O Song, K-K Kim, W-K Hong, Korea patent 10-0574103-0000

37. Flip-chip light emitting device and method of manufacturing thereof, T-Y Seong, J-O Song, K-K Kim, W-K Hong, Korea patent 10-0611640-0000

38. Top emitting light emitting device and method of manufacturing thereof), T-Y Seong, J-O Song, K-K Kim, W-K Hong, Korea patent 10-0611639-0000

39. Flip-chip light emitting device and method of manufacturing thereof, T-Y Seong, J-O Song, K-K Kim, W-K Hong, Korea patent 10-0574104-0000

40. Top emitting light emitting device and method of manufacturing thereof), T-Y Seong, J-O Song, K-K Kim, W-K Hong, Korea patent 10-0574105-0000

41. flip-chip light emitting diodes and method of manufacturing thereof, T-Y Seong, J-O Song, W-K Hong, Korea patent 10-0638862-0000

42. Light emitting device and method of manufacturing thereof, T-Y Seong, K-K Kim, J-O Song, D-S Leem, Korea patent 10-0634503-0000

43. Top emitting light emitting device and method of manufacturing thereof, T-Y Seong, K-K Kim, J-O Song, D-S Leem, J-I Sohn, Korea patent 10-0601945-0000

44. light emitting device and method of manufacturing the same, T-Y Seong, S-H Kim, V. R Reddy, Korea patent 10-0574106-0000

45. light emitting device and method of manufacturing thereof, T-Y Seong, J-O Song, D-S Lem, Korea patent 10-0580634-0000

46. flip-chip light emitting diodes and method of manufacturing thereof, T-Y Seong, J-O Song, D-S Leem, Korea patent 10-0624416-0000

47. Flip-chip light emitting diodes and method of manufacturing thereof, T-Y Seong, J-O Song, Korea patent 10-0590532-0000

48. light emitting device and method of manufacturing thereof, T-Y Seong, J-O Song, Korea patent 10-0647279-0000

49. Flip-chip type light emitting device and method of manufacturing the same, T-Y Seong, J-O Song, D-S Leem, Korea patent 10-0580627-0000

50. GaN-based III - V group compound semiconductor and p-typed electrode for the semiconductor, T-Y Seong, J-S Kwak, O-H Nam, J-O Song, D-S Leem, Korea patent 10-0647278-0000

51. light emitting device and method of manufacturing the same using p-type conductive transparent oxide thin film electrode, T-Y Seong, J-O Song, D-S Leem, Korea patent 10-0571819-0000

52. light emitting device and method of manufacturing the same, T-Y Seong, K-K Kim, J-O Song, D-S Leem, Korea patent 10-0571818-0000

53. light emitting device and method of manufacturing the same, T-Y Seong, J-O Song, D-S Leem, Korea patent 10-0571816-0000

54. light emitting device and method of manufacturing the same, T-Y Seong, J-O Song, Korea patent 10-0624411-0000

55. Transparant Film Electrode for Ohmic Contact of p-TypeSemiconductor Comprising N, Ga for High-quality Light Emitting Diodes and Laser Diodes, T-Y Seong, J-O Song, D-S Leem, Korea patent 10-0561841-0000

56. Metal thin film and the produce method for developmentof ohmic contact using Ni-based solid solution forhigh-quality optical devices related to GaN, T-Y Seong, J-O Song, D-S Leem, Korea patent 10-0612832-0000

57. A multilayer electrode and a compound semiconductor light emitting device having the same, T-Y Seong, J-O Song, K-K Kim, H-G Hong, K K Choi, H-S Kim, Korea patent 출원 10-2006-0101576

58. GaN-based III - V group compound semiconductor andp-typed electrode for the semiconductor, T-Y Seong, O-H Nam, J-S Kwak, J-O Song, D-S Leem, Korea patent 10-0634553-0000

59. ZnO-based light emitting device and method of manufacturing the same, S-H Kim, T-Y Seong, D-K Hwang, S-J Park, B-C Kim, Korea patent KR100589645 (B1)

60 Method for forming electrode of compound semiconductor device, J-S Kwak, T-Y Seong, J-O Song, Korea patent KR20060041004 (A), EU patent EP1655786 (A2), , USA patent US2006099806 (A1), Japan patent JP2006135293 (A)

61. Light emitting device and method of manufacturing the same, T-Y Seong, S-H Kim, V R Reddy, Korea patent KR20060019618 (A)

62. Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the same, J-O Song, D-S Leem, T-Y Seong, USA, Korea patents US2006102920 (A1), KR20040096207 (A)

63. Reflective electrode and compound semiconductor light emitting device including the same, J-S Kwak, T-Y Seong, J-O Song, USA patent US2006043388 (A1)

64. A low-resistance electrode of compound semiconductor light emitting device and a compound semiconductor light emitting device using the electrode, J-S Kwak; H-S Kim; T-Y Seong; J-O Song, Korea patent KR20060012789 (A)

65. Flip-chip light emitting device and method of manufacturing thereof, J-O Song; K-K Kim; W-K Hong; T-Y Seong, Korea patent KR20060007944 (A)

66. Fabricating methods of ohmic contact layer and light emitting device adopting the layer, J-H Cho, D-S Leem, T-Y Seong, C-S Sone, Korea (USA, Japan, China) patents KR20060119159 (A), US2006270206 (A1), JP2006324661 (A), CN1866564 (A)

67. ZnO based light emitting device and method ofmanufacturing the same, T-Y Seong, S-H Kim, D-G Hwang, S-J Park, B-C Kim, Korea patent 10-0589645-0000

68. Method of manufacturing nitride luminescent diode), T-Y Seong, D-S Leem, T Lee, Korea patent 10-0755591-0000

69. Optical device and Method of fabricating the same, T-Y Seong, Korea patent 10-0784384-0000

70. Semiconductor device and Method of fabricating the same, T-Y Seong, Korea patent 10-0784383-0000

71. Optical device and Method of fabricating the same, T-Y Seong, Korea patent 10-0784382-0000 74. light emitting device and method of manufacturing thesame, T-Y Seong, S-H Kim, S-W Jeong, B-C Kim, Korea patent 10-0716784-0000

72. Structure for light emitting device, light emitting device using the same and method of fabricating the same, T-Y Seong, Korea patent 10-0717276-0000

73. Structure for light emitting device and method of fabricating light emitting device using the same, T-Y Seong, Korea patent 10-0787939-0000

74. Structure for light emitting device and method of fabricating light emitting device using the same, T-Y Seong, Korea patent 10-0767398-0000

75. Electrode layer, light generating device comprisingthe same and method of forming the same, T-Y Seong, J-S Kwak, O-H Nam, J-O Song, Korea patent 10-0764458-0000

76. Thin film electrode for ohmic contact using materialscapable of making the binary and ternary p-typethermo-electronic oxide thin films for high-qualityoptical devices related to (Al,In)GaN and method, T-Y Seong, D-S Leem, J-O Song, S-H Kim, Korea patent 10-0707167-0000

77. Method of manufacturing light emitting device), T-Y Seong, J-O Song, J-I Sohn, Korea patent 10-0672077-0000

78. Supporting substrates for semiconductor light emitting device and method of manufacturing vertical structured semiconductor light emitting device using the supporting substrates, T-Y Seong, Korea patent 출원 10-2007-0108602

79. Top-emitting light emitting diodes and method of manufacturing thereof, W-K Hong, T-Y Seong, J-O Song, China, Korea patents CN101027790 (A), KR20060007948 (A)

80. High-brightness nitride-based light-emitting device with large area and capability using aluminum nitride-based supporting substrate layers, T-Y Seong, Korea patent KR20070087770 (A)

81. Light emitting device and method of manufacturing the same, J-O Song, D-S leem, T-Y Seong, USA, EU patents US2007254391(A1), EP1513203(A2), EP1513203(A3), US2005051783(A1), US2005051783(A1), US7205576(B2)

>82. Group 3 nitride-based flip-chip LEDs using modification layer composed of transparent conducting oxynitride and thermally decomposed nitride and method of manufacturing thereof, T-Y Seong, Korea patent KR20070068549 (A)

83. Development of highly transparent thermally decomposed nitride-based multi n-type ohmic contact layer and group III nitride light emitting devices with the same n-electrodes, T-Y Seong, Korea patent KR20070068537 (A)

84. Group 3 nitride-based LED using multilayered p-type ohmic contact layer composed of thermally decomposed nitride and method of manufacturing thereof, T-Y Seong, Korea patent KR20070068534 (A)

85. Growth of high-quality substrate and epitaxial layer for high-performance electronic and optical devices related to GaN, T-Y Seong, Korea patent KR20070068530 (A)

86. Group 3 nitride light receiving and emitting devices using transparent conducting oxynitride-based multi n-type Schottky and ohmic contact layers and method of manufacturing thereof, T-Y Seong, Korea patent KR20070063913 (A)

87. Group 3 nitride light receiving and emitting devices using transparent conducting oxynitride-based multi p-type Schottky and ohmic contact layers and method of manufacturing thereof, T-Y Seong, Korea patent KR20070063912 (A)

88. High-brightness nitride-based light emitting devices with large area and capability using refractory supporting substrate layers, T-Y Seong, Korea patent KR20070046224 (A)

89. Flip-chip nitride light emitting device and method of manufacturing thereof, T-Y Seong; J-O Song, USA, Korea patents US2007122925(A1), US2005133803(A1), US2005133803(A1), US7190002(B2), US7190002(B2), KR20050063293(A)

90. High-brightness nitride-based light-emitting devices with large area and capability using supporting substrate layer, T-Y Seong, Korea patent KR20070089764 (A)

91. High-brightness nitride-based light-emitting devices with large area and capability using supporting substrate layer, T-Y Seong, Korea patent KR20070089763 (A), KR100767398 (B1)

92. Nitride-based light emitting device and method of manufacturing the same, T-Y Seong, K-K Kim, J-O Song, D-S Leem, USA, EU patents US2007111354 (A1), EP1523047 (A2), EP1523047 (A3), US2005077537 (A1), US2005077537 (A1), US7180094 (B2)

93. Supporting substrates for semiconductor light emitting device and method of manufacturing vertical structured semiconductor light emitting device using the supporting substrates, T-Y Seong, Korea patent 10-2007-0108604

94. Light emitting device and method of manufacturing thereof, T-Y Seong, Korea patent 10-0794306-0000

95. Optical device and method of fabricating the same, T-Y Seong, Korea patent 10-0794305-0000

96. Structure for light emitting devices and method of fabricating light emitting devices, T-Y Seong, Korea patent 10-0832102-0000

97. Optical device and Method of fabricating the same, T-Y Seong, Korea patent 10-0794304-0000

98. Optical device and Method of fabricating the same, T-Y Seong, EU, world, USA patents EP2005488(A1), WO2007069871(A1), US2008258174(A1)

99. Group-III Nitride-Based Light Emitting Device, T-Y Seong, USA (world patents) patent US2008303055 (A1), WO2007074969 (A1)

100. Top-emitting nitride-based LED and method of manufacturing the same, J-O Song, T-Y Seong, J-S Kwak, W-K Hong, USA(world, EU) patents US2008299687 (A1), EP1548852 (A2), EP1548852 (A3,) US2005133809 (A1), US2005133809 (A1), US7417264 (B2)

101. Semiconductor Device and Method of Fabricating the Same, T-Y Seong, USA (world) patents US2008258133(A1), WO2007049939(A1), WO2007049939(A8)

102. Top-emitting light emitting diodes and methods of manufacturing thereof, T-Y Seong, J-O Song, K-K Kim, W-G Hong, USA (world, Japan) patents US2008224165 (A1), WO2006009413 (A1), JP2008507842 (T)

103. Nitride light emitting device and manufacturing method thereof, J-O Song, T-Y Seong, D-S Leem, USA (Korea) patents US2008145962(A1), US2005139825(A1), US2005139825(A1), US7372081(B2), US7372081(B2), KR20050064500(A)

104. Flip-Chip Light Emitting Diodes and Method of Manufacturing Thereof, T-Y Seong; J-O Song, K-K Kim, W-G Hong, USA (world, Japan,) patents US2008121914(A1), WO2006006822(A1), JP2008506272(T)

105. Reflective electrode and compound semiconductor light emitting device including the same, J-S Kwak; T-Y Seong; J-O Song, USA (Korea, Japan, China) patents US2008105890(A1), KR20060020331 (A), JP2006074042(A), CN1744334(A)

106. Method of manufacturing front face emission type nitride light emitting element, T-Y Seong; T-H Lee; D-S Leem, Japan (USA, Kore, China) patents JP2008004931 (A), US2008006842 (A1) , KR100755591 (B1), CN101093870 (A)

107. Fablication methodes of ohmic contact layer and lightemitting device adopting the layer, T-Y Seong, J-H Cho, D-S Leem, C-Sone, Korea patent, 10-0878433-0000

108. Reflective electrode and compound semiconductor light emitting device including the same, J-S Kwak, T-Y Seong, J-O Song, Korea patent 10-0896564-0000

109. Manufacturing method of carbon nanotube electrode for capacitor), W-B Kim, H-J Ahn, J-I Sohn, H-S Shim, Y-S Kim, T-Y Seong, Korea patent 0-0892382-0000

110. Supporting substrates for semiconductor light emitting device and method of manufacturing vertical structured semiconductor light emitting device using the supporting substrates, T-Y Seong, Korea patent 10-0886110-0000

111. Nitride-Based Light-Emitting Device and Method of Manufacturing the Same, T-Y Seong; K-K Kim; J-O Song D-S Leem, USA(Korea, Japan, China) patents US2009124030 (A1), US2005199895 (A1), US7485897 (B2), KR20050091579 (A), JP2005260245 (A), CN1677703 (A)

112. Nitride-based light-emitting device and method of manufacturing the same, J-O SONG; T-Y Seong, USA(EU, Korea) patents US2009095976 (A1), EP1531499 (A2), EP1531499 (A3), US2005104077 (A1), US7482639 (B2), KR20050046455 (A)

113. Vertical Type Nitrides light emitting device and method for manufacturing the same), T-Y Seong, J-H Yoon, J-H Oh, H-S Na, K-W Kim, W-H Kim, Korea patent application 10-2007-0056872

114. Nitrides light emitting device and method for manufacturing the sam ), T-Y Seong, J-H Yoon, H-G Hong, J-W Jeon, Y-H Kim, J-S Kim, Kore patent application 10-2007-0056871

115. Nitrides light emitting device, T-Y Seong, J-H Yoon, Kore patent #10-0889614-0000

116. 질화물계 발광소자 및 그 제조 방법 (light emitting device and method of manufacturing the same), 성태연, 김상호, 브이 라자고팔 레디, 대한민국 특허등록번호(일자) 0574101(2006.04.19), 출원번호(일자) 2006-0008823(2006.01.27)

117. 질화물계 발광소자의 제조 방법 (Method of manufacturing light emitting device), 성태연, 임동석, 손정인, 대한민국 특허등록번호(일자) 0579320(2006.05.04), 출원번호(일자) 2004-0092897(2004.11.15)

118. 광학 소자 및 그 제조 방법 (Optical device and Method of fabricating the same), 성태연, 대한민국 특허등록번호(일자) 0784384(2007.12.04), 출원번호(일자) 2005-0130233(2005.12.27)

119. 반도체 발광소자용 지지기판 및 이를 이용한 수직구조의 반도체 발광소자 제조 방법 (Supporting substrates for semiconductor light emitting device and method of manufacturing vertical structured semiconductor light emitting device using the supporting substrates), 성태연, 대한민국 특허등록번호(일자) 0916366(2009.09.01), 출원번호(일자) 0916366(2009.09.01)

120. 화합물 반도체 발광소자의 저저항 전극 및 이를 이용한 화합물 반도체 발광소자 (A low-resistance electrode of compound semiconductor light emitting device and a compound semiconductor light emitting device using the electrode), 이정욱, 성태연, 정상용, 대한민국 특허등록번호(일자) 0978234(2010.08.20), 출원번호(일자) 2008-0127336(2008.12.15)

121. 질화물 단결정의 제조 방법 및 이를 이용한 반도체 발광소자의 제조 방법 (Manufacturing method of nitride single crystal and manufacturing method of semiconductor light emitting devide using the same), 이정욱, 성태연, 정상용, 대한민국 특허등록번호(일자) 0990645(2010.10.22), 출원번호(일자) 2008-0127336(2008.12.15)

122. 수직구조를 갖는 반도체 발광소자 제조용 지지기판, 이를 이용한 수직구조를 갖는 반도체 발광소자 제조 방법 및 수직구조를 갖는 반도체 발광소자 (A supporting substrate for manufacturing vertical structured semiconductor light emitting device, method of manufacturing the semiconductor light emitting device using the supporting substrate and vertical structured semiconductor light emitting devices), 성태연, 대한민국 특허등록번호(일자) 0999548(2010.12.02), 출원번호(일자) 0999548(2010.12.02)

123. 질화물 반도체 발광소자 및 그 제조 방법 (Nitride Semiconductor Light Emitting Device and Menufacturing Method of the Same), 김현수, 정세연, 홍현기, 전준우, 성태연, 손철수, 대한민국 특허등록번호(일자) 1004868(2010.12.22), 출원번호(일자) 2008-0128876(2008.12.17)

124. 선택적 표면 플라즈몬 결합을 이용한 발광소자 및 그 제조 방법 (NITRIDES LIGHT EMITTING DEVICE SELECTIVELY USING THE COUPLING EFFECT BETWEEN SURFACE PLASMONS AND ACTIVE LAYER AND METHOD FOR MANUFACTURING IT), 성태연, 윤주헌, 대한민국 특허등록번호(일자) 1011108(2011.01.19), 출원번호(일자) 2009-0023328(2009.03.19)